US 9117909

US Patent 9117909 Summary:

• Title: Non-planar transistor
• Current Assignee: Marlin Semiconductor Ltd [cite: Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.) Marlin Semiconductor Ltd] (Originally assigned to United Microelectronics Corp) [cite: Original Assignee United Microelectronics Corp, Assigned to UNITED MICROELECTRONICS CORP.]
• Inventors: Lung-En Kuo, Po-Wen Su, Chen-Yi Weng, Hsuan-Hsu Chen [cite: Inventor Lung-En Kuo, Po-Wen Su, Chen-Yi Weng, Hsuan-Hsu Chen]
• Filing Date: August 28, 2014 [cite: Filing date 2014-08-28]
• Issue Date: August 25, 2015 [cite: Publication date 2015-08-25]
• Abstract: The patent describes a method for forming a fin structure. This involves providing a substrate with defined first, second (encompassing the first), and third (encompassing the second) regions. First trenches of a certain depth are formed in the first and second regions, creating first fin structures. The first fin structures in the second region are then removed. Subsequently, the first trenches are deepened to a second depth, forming second trenches which define second fin structures. The patent also covers the structure of a non-planar transistor.

Plain-Language Overview of Independent Claims:

• Claim 1: This claim describes a non-planar transistor that includes:
  • A foundational material (substrate) with an active area and an isolation area surrounding it.
  • Several shallow grooves (trenches) in the active area, where the material between these grooves forms a "protruding structure." This protruding structure has an upper part with straight, vertical sides and a lower part with angled, tilted sides.
  • A deeper groove (trench) in the isolation area, which is deeper than the shallow grooves and has a distinct "shoulder portion."
  • An insulating material filling both the shallow and deep grooves, such that the top surface of the insulation is at the same level in all grooves.
  • The part of the protruding structure that extends above the insulating material is called the "fin structure."
  • A conductive layer is placed on top of this fin structure.
  • A gate dielectric layer is positioned between the fin structure and the conductive layer.

CAFC 2026 Dockets:

A search of the CAFC 2026 dockets did not yield any specific cases directly listing US patent 9117909. However, the Google Patents information for US9117909B2 indicates that a PTAB case IPR2025-01527 was filed, though it was "Not Instituted - Procedural." [cite: PTAB case IPR2025-01527 filed (Not Instituted - Procedural)]