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US 9318609

Semiconductor device with epitaxial structure

Current assignee: Unified Patents

Added 5/12/2026, 11:40:39 PM

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Patent summary

Title, assignee, inventors, filing/issue dates, abstract, and a plain-language overview of the claims.

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Here is a concise summary of US patent 9318609:

US Patent 9318609 Summary

  • Title: Semiconductor device with epitaxial structure
  • Current Assignee: Marlin Semiconductor Ltd
  • Original Assignee: United Microelectronics Corp
  • Inventors: Yu-Hsiang Hung, Ssu-I Fu, Chung-Fu Chang, Cheng-Guo Chen, Chien-Ting Lin
  • Filing Date: 2015-02-12
  • Issue Date (Publication Date): 2016-04-19
  • Abstract: A semiconductor device includes a fin structure, an isolation structure, a gate structure and an epitaxial structure. The fin structure protrudes from the surface of the substrate and includes a top surface and two sidewalls. The isolation structure surrounds the fin structure. The gate structure overlays the top surface and the two sidewalls of a portion of the fin structure, and covers a portion of the isolation structure. The isolation structure under the gate structure has a first top surface and the isolation structure at two sides of the gate structure has a second top surface. The first top surface is higher than the second top surface. The epitaxial layer is disposed at one side of the gate structure and is in direct contact with the fin structure.

Plain-Language Overview of Independent Claims:

  • Independent Claim 1: This claim describes a semiconductor device featuring a "fin structure" (a raised semiconductor component) that extends from a substrate and has a top and two side surfaces. An "isolation structure" surrounds this fin. A "gate structure" is positioned over part of the fin structure (covering its top and sides) and also covers a section of the isolation structure. Crucially, the isolation structure directly underneath the gate is higher than the isolation structure on either side of the gate. Finally, an "epitaxial layer" (a specially grown semiconductor layer) is placed on one side of the gate structure and directly touches the fin structure.

Litigation and Docket Information (as of April 26, 2026):

The patent family has ongoing litigation. A PTAB (Patent Trial and Appeal Board) case, IPR2026-00130, was filed and is currently pending.

As of the current date, a search for US patent 9318609 in the CAFC (U.S. Court of Appeals for the Federal Circuit) 2026 dockets did not yield any direct case filings or decisions related to this specific patent number. While the patent is involved in a pending PTAB case, it does not currently appear to be the subject of a CAFC appeal for 2026.

Generated 5/26/2026, 6:47:08 PM