US 8076735

US Patent 8076735, titled "Semiconductor device with trench of various widths," was filed on October 2, 2009, and issued on December 13, 2011. The original assignee was United Microelectronics Corp., and the current assignee is [Marlin Semiconductor Ltd.](/litigations/by-defendant/Marlin%20Semiconductor%20Ltd.) The inventor is Chun-Hsien Lin.

Abstract:
The patent describes a semiconductor device and a method for its fabrication. The method involves forming a polysilicon layer on a substrate, doping it with an N-type dopant, and then removing a portion to create dummy patterns. Each dummy pattern has a top, a bottom, and a neck between them, where the neck's width is narrower than the top's. A dielectric layer is then formed, covering the substrate between dummy patterns and exposing their tops. After removing the dummy patterns to create trenches in the dielectric layer, gate structures are formed in these trenches.

Plain-language overview of independent claims:

• Claim 1: This claim describes a semiconductor device comprising:
  • A substrate with a dielectric layer on it, where a trench is located within the dielectric layer.
  • A gate structure placed in the trench, which includes a high dielectric constant layer, a work function metal layer, and a metal layer, sequentially positioned on the substrate.
  • A source/drain region situated in the substrate on either side of the gate structure.
  • The trench itself has a specific shape: a top, a bottom, and a neck between them. The key feature is that the width of the neck is narrower than the width of the top, and the width of the neck is also narrower than or equal to the width of the bottom.

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