US 10720483

Here's a concise summary of US Patent 10720483:

Title: Thin film transistor array substrate and organic light-emitting diode display

Assignee: Samsung Display Co Ltd.

Inventors: Won-Se Lee, Won-Kyu Kwak, Se-Ho Kim

Filing Date: September 18, 2017

Issue Date: July 21, 2020

Abstract: A thin film transistor (TFT) array substrate includes: a substrate; a first insulation layer on the substrate; a capacitor including a lower electrode on the first insulation layer, and an upper electrode arranged to overlap with the whole lower electrode and having an opening, and the upper electrode is insulated from the lower electrode by a second insulation layer; an inter-layer insulation film covering the capacitor; a node contact hole in the inter-layer insulation film and the second insulation layer, and within the opening; and a connection node on the inter-layer insulation film and electrically coupling the lower electrode and at least one TFT to each other through the node contact hole.

Plain-Language Overview of Independent Claims:

• Claim 1: This claim describes a TFT array substrate featuring a first TFT and a second TFT, both having respective channel regions and gate electrodes separated by a first insulating layer. A second insulating layer is positioned on these gate electrodes. Crucially, a first metal pattern, which forms part of a capacitor, overlaps the first gate electrode, separated by the second insulating layer. A third insulating layer covers the first metal pattern, and a connection member on this third insulating layer electrically links the first gate electrode and the second TFT.
• Claim 22: This independent claim largely mirrors Claim 1 in its foundational components (substrate, first and second TFTs with their respective channel and gate electrodes, first, second, and third insulating layers, and a first metal pattern overlapping the first gate electrode). The key distinction in Claim 22 is the addition that the connection member, disposed on the third insulating layer and electrically connecting the first gate electrode and the second thin film transistor, specifically overlaps a portion of the first channel region in a plan view.

Litigation:

According to the Google Patents legal status information, the patent family has litigation. Specifically, PTAB case IPR2025-01498 was filed (Settlement), and a US case was filed in the Texas Eastern District Court (case 2:25-cv-00430). First worldwide family litigation was also filed. These indicate ongoing or resolved legal challenges related to the patent.

*(Note: The search for CAFC 2026 dockets did not yield specific results for patent 10720483, but rather general information about CAFC activity in 2026. Therefore, the litigation details are drawn from the Google Patents summary of the patent's legal status itself.)*Here's a concise summary of US Patent 10720483:

Title: Thin film transistor array substrate and organic light-emitting diode display

Assignee: Samsung Display Co Ltd.

Inventors: Won-Se Lee, Won-Kyu Kwak, Se-Ho Kim

Filing Date: September 18, 2017

Issue Date: July 21, 2020

Abstract: A thin film transistor (TFT) array substrate includes: a substrate; a first insulation layer on the substrate; a capacitor including a lower electrode on the first insulation layer, and an upper electrode arranged to overlap with the whole lower electrode and having an opening, and the upper electrode is insulated from the lower electrode by a second insulation layer; an inter-layer insulation film covering the capacitor; a node contact hole in the inter-layer insulation film and the second insulation layer, and within the opening; and a connection node on the inter-layer insulation film and electrically coupling the lower electrode and at least one TFT to each other through the node contact hole.

Plain-Language Overview of Independent Claims:

• Claim 1: This claim describes a thin film transistor (TFT) array substrate comprising a substrate with a first insulating layer. On this first insulating layer are a first thin film transistor (TFT) and a second TFT. The first TFT includes a first channel region and a first gate electrode overlapping it, separated by the first insulating layer. Similarly, the second TFT has a second channel region and a second gate electrode, also separated from its channel region by the first insulating layer. A second insulating layer is disposed on both the first and second gate electrodes. A first metal pattern, which forms one part of a capacitor, overlaps the first gate electrode, with the second insulating layer between them. A third insulating layer is placed on the first metal pattern. Finally, a connection member on this third insulating layer electrically links the first gate electrode to the second thin film transistor.
• Claim 22: This independent claim largely builds upon the structure of Claim 1. It specifies a thin film transistor (TFT) array substrate with a substrate, a first insulating layer, a first TFT (with a first channel region and a first gate electrode separated by the first insulating layer), and a second TFT (with a second channel region and a second gate electrode separated by the first insulating layer). It also includes a second insulating layer on the gate electrodes, a first metal pattern overlapping the first gate electrode (separated by the second insulating layer), and a third insulating layer on the first metal pattern. The key differentiating feature of Claim 22 is that the connection member, which is disposed on the third insulating layer and electrically connects the first gate electrode and the second thin film transistor, is further characterized by overlapping a portion of the first channel region in a plan view.

Litigation:

The patent family associated with US10720483 has active litigation. This includes a PTAB case, IPR2025-01498, which was filed and reached a settlement. Additionally, a US case was filed in the Texas Eastern District Court under case number 2:25-cv-00430. There has also been first worldwide family litigation filed.