US 8993384

Here's a concise summary of US Patent 8993384:

Title: Semiconductor device and fabrication method thereof

Current Assignee: Marlin Semiconductor Ltd [cite: Original Patent Text] (assigned on 2023-10-20, originally assigned to United Microelectronics Corp) [cite: Original Patent Text]

Inventors: Yu-Hsiang Hung, Ssu-I Fu, Chung-Fu Chang, Cheng-Guo Chen, Chien-Ting Lin [cite: Original Patent Text]

Filing Date: June 9, 2013 [cite: Original Patent Text]

Issue Date: March 31, 2015 [cite: Original Patent Text]

Abstract: A semiconductor device includes a fin structure, an isolation structure, a gate structure, and an epitaxial structure. The fin structure protrudes from the substrate surface and has a top and two sidewalls. The isolation structure surrounds the fin structure. The gate structure overlays a portion of the fin structure's top and sidewalls and covers part of the isolation structure. The isolation structure directly under the gate structure has a first (higher) top surface, while the isolation structure on either side of the gate structure has a second (lower) top surface. An epitaxial layer is placed at one side of the gate structure and is in direct contact with the fin structure. [cite: Original Patent Text]

Plain-language overview of independent claims:

• Claim 1 (Fabrication Method): This claim describes a method for manufacturing a semiconductor device. It involves forming a fin structure that extends from a substrate, then creating an isolation structure around the fin. Next, a gate structure is formed, covering part of the fin structure and a portion of the isolation structure. After the gate is formed, the isolation structure that is not covered by the gate is etched down to a certain "first depth." Subsequently, a recess is created in the fin structure next to the gate. Finally, an epitaxial layer is grown to fill this recess, where the bottom of the recess is at a "second depth," which is deeper than the "first depth" of the etched isolation structure. [cite: Original Patent Text]

CAFC 2026 Dockets:
A search of CAFC 2026 dockets for patent number 8993384 did not explicitly return any results as of April 26, 2026. However, the patent's legal status indicates that a PTAB (Patent Trial and Appeal Board) case, IPR2025-01265, was filed and is currently pending/instituted [cite: Original Patent Text]. This is not a CAFC docket, but rather an administrative proceeding at the USPTO.