US 12087871

I can provide a summary of US patent 12087871.

US Patent 12087871: Summary

• Title: Microstructure enhanced absorption photosensitive devices
• Assignee: W&w Sens Devices Inc
• Inventors: Shih-Yuan Wang, Shih-Ping Wang
• Filing Date: October 30, 2023
• Issue Date: September 10, 2024
• Abstract: The patent describes a photodetector with microstructure-enhanced photoabsorption. This device includes a cathode region, an anode region, and reverse biasing circuitry. A key component is a microstructure-enhanced photon absorbing semiconductor region designed to absorb photons from a source signal. The absorbing region incorporates multiple microstructures, such as pillars, holes, and/or voids, which are sized and positioned to increase photon absorption across a range of wavelengths, including that of the source signal. These microstructures aim to improve the effective absorption coefficient of the material, allowing for higher quantum efficiency and data bandwidth in photosensitive devices like photodiodes, avalanche photodiodes, and photovoltaic cells. The patent also discusses applications in reducing dielectric constant for microwave transmission lines and controlling thermal conductivity for heat management.

Plain-Language Overview of Independent Claims:

• Independent Claim 1: This claim describes a photodetector designed for enhanced light absorption. It comprises a cathode, an anode, and circuitry to apply a reverse bias voltage between them. The core innovation is a semiconductor region structured with multiple microstructures (like pillars, holes, or voids). These microstructures are specifically designed and positioned to boost the absorption of incoming photons, particularly at the wavelength of the signal being detected. The claim specifies that at least one dimension of these microstructures is equal to or shorter than the longest signal wavelength, and they work by creating an "absorbing mode high contrast grating" which uses various optical effects (resonance, scattering, near-field, sub-wavelength, and interference) to increase absorption.
• Independent Claim 13: This claim describes a photovoltaic device. It includes a semiconductor material that has multiple buried voids within it. This semiconductor material is configured to convert solar radiation into direct current electricity. The buried voids are microstructured and are designed to enhance the absorption of the semiconductor material, thereby improving the overall conversion efficiency of the device. The voids are sized and/or spaced by less than 3 microns to alter the effective refractive index of the semiconductor material, which can reduce reflection of sunlight and/or increase internal reflections within the material.
• Independent Claim 16: This claim outlines a microwave transmission line structure. It consists of a semiconductor substrate material with numerous high-density dielectric-filled voids. These voids are included to reduce the dielectric constant of the semiconductor substrate material. Positioned above this substrate material are multiple metallic microwave transmission lines, with at least one line being located directly above the void-containing substrate. The dielectric-filled voids can be filled with materials like nitrogen, argon, vacuum, air, helium, polymer, metal oxides, silicon dioxide, silicon nitride, calcium fluoride, or zinc oxide, and are further configured to reduce dispersion and loss in the transmission lines by decreasing current loop flow and/or eddy currents.
• Independent Claim 17: This claim describes an optical waveguide structure. It includes an optical mode region and a supporting semiconductor material situated next to this optical mode region. The supporting material is characterized by having a plurality of microstructured voids. These voids are specifically configured to modify the effective index of refraction of the supporting material, and this modification is dependent on the size, shape, and density of the microstructured voids.
• Independent Claim 18: This claim details a heat exchanger system. The system includes a heat-generating device and a heat sink designed to dissipate heat to the surroundings. An intermediate material is placed between the heat-generating device and the heat sink. This intermediate material contains multiple buried voids which are configured to influence its thermal conductivity. Some of these voids are filled with a thermally conductive material, while others are filled with a thermally isolating material. These two types of voids are strategically positioned to conduct heat efficiently from the heat-generating device to the heat sink, while simultaneously reducing thermal crosstalk with other heat-sensitive devices mounted on the intermediate material.

CAFC 2026 Dockets:

As of April 26, 2026, a search of CAFC 2026 dockets for patent number 12087871 did not return any direct results for this specific patent number. The search results show other patent litigation cases filed in the U.S. Court of Appeals for the Federal Circuit in 2026, but none are associated with US12087871B2.