US 10468543

{"answer":"A search of the U.S. Patent and Trademark Office (USPTO) database and the provided full patent text confirms the following information for U.S. Patent No. 10,468,543.

Title: Microstructure enhanced absorption photosensitive devices

Assignee: W&wsens Devices Inc

Inventors: Shih-Yuan Wang, Shih-Ping Wang, M. Saif Islam

Filing Date: March 8, 2019

Issue Date: November 5, 2019

Abstract: The patent describes a photosensitive device with enhanced light absorption capabilities. This is achieved by incorporating microstructures, such as holes or pillars, into the device's layers. These microstructures can be of various shapes, including inverted pyramids or funnels, and can be arranged in periodic or aperiodic patterns. The device can be a photodiode (PD) or an avalanche photodiode (APD) and can be made from silicon, germanium, or a silicon-germanium alloy. The design aims to improve quantum efficiency, particularly for light in the near-infrared spectrum, and to enable high-speed operation. The patent also covers the monolithic integration of these photosensitive devices with electronic circuits like transimpedance amplifiers (TIAs) on a single chip, which can reduce manufacturing costs and improve performance for applications such as optical communications and Light Detection and Ranging (LIDAR) systems.

Plain-Language Summary of Independent Claims:

Claim 1: This claim describes a single-chip device that combines a light-detecting component (a microstructure-enhanced photodetector or MSPD) with an electronic circuit. The MSPD is made of layers of silicon, germanium, or a combination of both. A key feature is the presence of tiny, intentionally created holes within these layers. These holes are designed to trap light, increasing the device's sensitivity. The electronic circuit on the same chip processes the electrical signal generated by the MSPD. This integration allows for a compact and efficient device.

Claim 16: This claim focuses on a method for making the microstructure-enhanced photodetector. It details the steps of creating a layered structure of semiconductor materials (silicon, germanium, or a mix) on a substrate and then forming microscopic holes in these layers. The holes are designed to improve the absorption of light. The method also includes adding electrical contacts to the device so it can be used in a circuit.","status":"SUCCESS"}