US 9093473

Here is a concise summary of US patent 9093473:

Patent Number: US9093473B2
Title: Method for fabricating metal-oxide semiconductor transistor
Current Assignee: Marlin Semiconductor Ltd
Inventors: Ming-Te Wei, Wen-Chen Wu, Lung-En Kuo, Po-Chao Tsao
Filing Date: 2014-07-15
Issue Date: 2015-07-28
Abstract: A method for fabricating a metal-oxide semiconductor (MOS) transistor is disclosed. The method includes the steps of: providing a semiconductor substrate; forming a silicon layer on the semiconductor substrate; performing a first photo-etching process on the silicon layer for forming a gate pattern; forming an epitaxial layer in the semiconductor substrate adjacent to two sides of the gate pattern; and performing a second photo-etching process on the gate pattern to form a slot in the gate pattern while using the gate pattern to physically separate the gate pattern into two gates.

Plain-Language Overview of Independent Claims:

• Independent Claim 1: This claim describes a method for manufacturing a Metal-Oxide Semiconductor (MOS) transistor. The core idea is to first create a gate pattern on a semiconductor substrate and then form an epitaxial layer next to this gate pattern. Crucially, after the epitaxial layer is formed, a second photo-etching step is performed on the gate pattern to create a slot within it, effectively dividing the original gate pattern into two separate gates.

Litigation Status (as of April 26, 2026):

The patent family has ongoing litigation. A PTAB case, IPR2025-00879, was filed but not instituted due to procedural reasons. Additionally, US cases related to this patent have been filed in the Texas Western District Court (case 1:25-cv-00215), the Texas Eastern District Court (case 2:25-cv-00171), and the International Trade Commission (cases 337-TA-3809 and 337-TA-1443). There is no specific mention of US9093473 in the CAFC May 2026 scheduled cases, and the CAFC case information provided general resources rather than specific dockets for this patent number.