US 9455274

Patent Overview: US9455274B2

Title: Replacement fin process in SSOI wafer

Patent number: US9455274B2

Application number: US14/609,574 (published as US20160225789A1)

Assignee: International Business Machines Corporation (original and current assignee as listed)

Inventors: Bruce B. Doris, Hong He, Ali Khakifirooz, Junli Wang

Key dates: Priority date and filing date 2015-01-30; publication date 2016-09-27. Anticipated expiration listed as 2035-01-30. Legal status shown as "Expired - Fee Related" (a status assumption, not a legal conclusion).

Purpose: The patent relates to a replacement fin process performed in a strained silicon-on-insulator (SSOI) wafer. It addresses forming fins and strained layers in the fabrication of fin-based semiconductor devices.

Plain-language scope (from supplied text): The disclosure concerns fabricating replacement fins on an SSOI wafer. The prior-art keywords listed—"fins," "layer," "pFET," "strained," and "forming"—indicate the subject matter involves forming fin structures, strained layers, and both n-type and p-type FET regions on a common substrate. Classifications include fin field-effect transistors (FinFETs), SOI substrates, and integration of multiple device types (including CMOS and isolation regions) on the same substrate, consistent with a method for replacing fins in selected regions of an SSOI wafer.

Source: https://patents.google.com/patent/[US9455274](/patent/US9455274)/en

What the excerpt does not establish: The supplied excerpt contains no claims, no detailed description, no drawings, and no prior-art references. Therefore it does not establish the specific steps, materials, layer thicknesses, or exact claim scope of the invention; it also does not establish prosecution history, family members beyond those listed, or the substantive content of the related application US15/082,161 (US9917105B2). No findings on litigation, ownership transfers, validity, or prior art are made here.