Invalidity dossier

US 10254261

Integrated air quality sensor that detects multiple gas species

Current assignee: STMicroelectronics International NV

Added 9/24/2026, 6:05:58 PM

At a glanceNo PTAB challengesNo litigation on fileSemiconductor (T)

Active provider: DeepSeek · deepseek-v4-flash

Patent summary

Title, assignee, inventors, filing/issue dates, abstract, and a plain-language overview of the claims.

✓ Generated

I'll search for the specific patent number and check for any CAFC 2026 docket activity.

Let me search more specifically for litigation and PTAB/CAFC activity involving this patent.

One more targeted check for any PTAB/ITC/docket proceedings.

US 10,254,261 — Summary

Note on the searches first (important):

  • The patent number as given, 10254261 (i.e., US 10,254,261 B2), resolves cleanly. No similarly-numbered patent was substituted; all results below are for US 10,254,261 B2 / application 15/213,100 / publication US 2018/0017536 A1.
  • No CAFC 2026 docket activity, PTAB (IPR/PGR) proceeding, or ITC investigation involving US 10,254,261 was found. I ran repeated targeted searches on the patent number plus "CAFC," "IPR2025/IPR2026," "PTAB," "ITC," "District Court," and "litigation," and nothing tied to this patent surfaced. Caveat: I cannot query PACER/Docket Navigator or the CAFC docket system directly with the tools available, so I frame this as "no results located in public web/search sources," not as a certified absence of litigation. The Google Patents record shows no post-grant challenges; the only legal events are routine assignment and maintenance-fee entries.

Bibliographic Data

Field Value
Patent number US 10,254,261 B2 (as given: 10254261)
Title Integrated air quality sensor that detects multiple gas species
Application no. US 15/213,100
Pre-grant publication US 2018/0017536 A1, published 2018-01-18
Filing date 2016-07-18
Priority date 2016-07-18
Issue/grant date 2019-04-09
Inventors Olivier Le Neel; Tien Choy Loh; Shian Yeu Kam; Ravi Shankar
Original assignee STMicroelectronics Pte Ltd (Singapore)
Current assignee STMicroelectronics International N.V. (Switzerland) — reassignment recorded 2024-07-18, effective 2024-06-28
Claim count 19 claims (4 independent: 1, 8, 12, 17)
Status Active; adjusted expiration 2036-12-18 (per Google Patents); 4th-year maintenance fee paid 2022-09-21
Family CN 201710288521.5 → CN 107632113 A; CN 201720459726.0 U → CN 207300952 U
Source https://patents.google.com/patent/US10254261/en

Abstract (verbatim)

"A microelectronic device capable of detecting multiple gas constituents in ambient air can be used to monitor air quality. The microelectronic air quality monitor includes a plurality of temperature-sensitive gas sensors tuned to detect different gas species. Each gas sensor is tuned by programming an adjacent heater. An insulating air pocket formed below the sensor helps to maintain the sensor at a desired temperature. A temperature sensor may also be integrated with each gas sensor to provide additional feedback control. The heater, temperature sensor, and gas sensors are in the form of patternable thin films integrated on a single microchip. The device can be incorporated into computer workstations, smart phones, clothing, or other wearable accessories to function as a personal air quality monitor that is smaller, more accurate, and less expensive than existing air quality sensors."

Plain-Language Overview of the Independent Claims

Claim 1 — Device (stacked cavity/heater/thermo-sensor/gas-film unit).
A chip with a substrate carrying several gas-species sensors arranged as elements of one integrated-circuit array. Each sensor element contains four things: (a) a cavity formed in the substrate; (b) a gas-sensitive material that detects a particular gas species; (c) a heating element next to that material; and (d) a temperature-sensing element located between the gas-sensitive material and the heater. Critically, the cavity, gas film, heater, and temperature sensor are aligned with one another — i.e., a vertically stacked, co-located structure rather than laterally separated components.

Claim 8 — Microelectronic air quality monitor (system-level claim).
A semiconductor substrate (claim 9 adds that it may be glass) supporting a micro-sensor array of multiple sensor elements. Each element has its own heater, its own gas micro-sensor configured to detect a particular gas species in ambient air, and its own temperature sensor positioned between the heater and the gas micro-sensor. A microprocessor is communicatively coupled to the array, and an electronic memory coupled to the microprocessor stores instructions for it to execute (claims 10–11 add that the gas micro-sensors are temperature-tunable and that the temperature sensor reports to the microprocessor).

Claim 12 — Method of fabricating a two-sensor (multi-sensor) chip.
Steps: form a first heater in a first region of an IC chip; form a first temperature sensor in that region on top of the first heater; form a first gas-sensitive material in that region on top of the first temperature sensor; form a through hole through the first heater and the first gas-sensitive material; then repeat the layered build in a second region of the same chip — second heater, second temperature sensor on the second heater, second gas-sensitive material on the second temperature sensor. (Claim 13 specifies low-TCR tantalum-aluminum heating elements; claim 14 lists ZnO₂, In₃O₃, SnO₂; claim 15 adds first/second air pockets with the sensitive material spaced from the air pocket by the heater; claim 16 requires the two gas-sensitive materials to be different materials.)

Claim 17 — Device (through-hole variant).
Substantively the same device as claim 1 (substrate + multiple gas-species sensors in a single IC array; each with a substrate cavity, a gas-sensitive material, an adjacent heating element, and a temperature-sensing element adjacent to the gas-sensitive material, all mutually aligned), plus the added requirement that each sensor has a through hole extending through the gas-sensitive material, the heating element, and the temperature-sensing element. Claim 18 narrows this to the temperature sensor being between the film and the heater; claim 19 adds a passivation layer with openings over the gas-sensitive material.

Notable Observations and Points of Uncertainty

  1. The "temperature sensor between heater and gas film" is the recurring point of novelty. Three of the four independent claims (1, 8, 17) hinge on that vertical ordering or on a through-hole penetrating the stack. Claim 1 also requires mutual alignment of cavity/film/heater/thermal sensor.
  2. Reactive-layer thickness limits appear only in dependent claims: <500 nm (claim 2) and <200 nm (claim 5). The specification's stated VOC film is ~30–100 nm SnO₂.
  3. The specification mentions a CO₂ sensor and humidity/temperature sensors, but no independent claim recites CO₂, humidity, or a gas analyzer as such. The claim set is directed to the multi-element MOX sensor architecture. A sibling filing by the same inventors filed the same day (US 15/213,230 → US 10,429,330 B2, "Gas analyzer that detects gases, humidity, and temperature") covers the broader analyzer.
  4. Literal identifier inconsistency in the source, preserved here: the description variously writes "indium oxide (In₂O₃)" and "In₃O₃," while claim 4 recites "In₂O₃"; SnO₂ is written elsewhere as "SnO 2." Per instructions I have not auto-corrected these.
  5. Assignee chain is unsettled beyond the recorded events. Google Patents shows an original 2016 assignment to STMicroelectronics Pte Ltd and a 2024 assignment to STMicroelectronics International N.V. I did not independently verify the USPTO Assignment database entry (reel/frame 068433/0970 is referenced only for the 2024 transfer; the 2016 entry cites reel/frame 039186/0242).
  6. No post-grant or appellate activity located. As stated above, I found no CAFC 2026 docket, IPR, PGR, reissue, reexam, or ITC matter for this patent. Treat this as "nothing found in the sources searched," not as a definitive negative.

Primary sources:

Generated 9/29/2026, 4:43:58 AM

Cases on file (0)

Specific litigation cases in our database that name US patent 10254261. The free-form analysis below may also discuss cases beyond this list.

No cases on file mention this patent. Upload a CSV or add a case manually in Admin → Manage litigation cases.

Litigation summary

Past and pending lawsuits — plaintiffs, defendants, jurisdictions, outcomes, and notable rulings.

✓ Generated

I'll search litigation databases for US Patent 10,254,261.

Initial results are inconclusive. Let me query litigation-specific sources.

Let me try additional litigation-focused searches.

Summary Finding

No litigation involving U.S. Patent No. 10,254,261 ("Integrated air quality sensor that detects multiple gas species") was found. Based on searches of publicly indexed litigation and patent sources, there is no record of this specific patent having been asserted in any U.S. district court, the Court of Appeals for the Federal Circuit, before the PTAB, at the ITC, or in any foreign (e.g., Chinese or European) proceeding.

What I searched and what came back

I ran targeted queries against publicly indexed sources, including Google Patents, USPTO.report, Justia Patents, Docket Alarm/PACER-derived document indexes, CourtListener, and the Unified Patents litigation/PTAB caselist URLs. Results for the exact string "10254261" / "10,254,261" returned:

Result Relevance
Google Patents page for US10254261B2 Patent bibliographic/legal-status page only. No "Litigation" section populated. Lists status: Active, adjusted expiration 2036-12-18, current assignee STMicroelectronics International N.V. (assignment recorded 2024-07-18, effective 2024-06-28, from STMicroelectronics Pte Ltd).
uspto.report/patent/grant/10,254,261 Prosecution/bibliographic data only.
Justia Patents (citation listing under US11760170) Mere citation of "10254261 – April 9, 2019 – Le Neel et al." in a later Denso patent's reference list. Not litigation.
"ABANDONED VALUABLES ADVERTISEMENT" (DC MPD, 2020) Coincidental numeric match ("MONEY 10254261"). Not a patent.
Brazilian TRF-1 exam list; PTAB filings referencing "the '261 Patent" (U.S. Pat. No. 7,608,261 and Nos. 10,227,639 / 11,293,051 / 11,293,054) Coincidental numbering collisions with different patents/cases (e.g., Formycon/Samsung Bioepis IPRs, Nanostring case "22-cv-261"). Not US 10,254,261.

Per your instruction, I did not treat any of these as the patent in question.

Case-by-case table

Plaintiff Defendant Jurisdiction Case No. Filing Date Status/Outcome
(none found) (none found) — — — No litigation identified

Important caveats

  1. The patent appears to be unasserted. U.S. 10,254,261 is a 2019 STMicroelectronics patent (application US 15/213,100, filed 2016-07-18, granted 2019-04-09, priority 2016-07-18). Its family includes Chinese counterparts CN107632113A (application 201710288521.5) and CN207300952U (application 201720459726.0U). No assertion activity against those counterparts surfaced either. STMicroelectronics is generally a licensing/product operating company rather than a serial litigant, which is consistent with an unasserted portfolio asset.
  2. No PTAB or reexamination activity found. The patent is listed as Active with maintenance fees paid (4th-year fee paid 2022-09-21) and no IPR, PGR, or ex parte reexamination was identified.
  3. Search limitations. Unified Patents' portal litigation caselist and PTAB caselist are JavaScript-driven and could not be fully enumerated via indexed search results; PACER and Docket Navigator require authenticated access and are not fully indexed by general web search. My conclusion rests on publicly indexed sources as of the search date.
  4. Verification path. To confirm a negative with higher confidence, I would recommend checking directly: (a) Unified Patents Portal → Litigation caselist, filtered by patent number; (b) Docket Navigator or Lex Machina patent-number search for 10,254,261; (c) PACER Case Locator; (d) USPTO Patent Trial and Appeal Board ISI and the USPTO Patent Examination Data/reassignment records; and (e) the USPTO Patent Assignment Search for any security-interest or license records that might hint at enforcement activity.
  5. Not a legal opinion. This is a factual survey of publicly available records, not a legal conclusion, and it should not be relied on as a substitute for a formal clearance or freedom-to-operate search.

If you'd like, I can run the same targeted check against the sibling patents in the same family — e.g., US 10,429,330 ("Gas analyzer that detects gases, humidity, and temperature"), US 10,768,133 ("Integrated SMO gas sensor module"), and US 11,009,477 ("Integrated multi-sensor module") — to see whether the assignee has asserted the broader sensor portfolio even if it has not asserted 10,254,261.

Generated 9/29/2026, 4:44:00 AM

Proceedings on file (0)

All PTAB activity →

AIA trial proceedings (IPR / PGR / CBM) filed at the USPTO Patent Trial and Appeal Board against this patent. Sourced from the USPTO Open Data Portal and refreshed every six hours; each proceeding number deep-links to the PTAB E2E docket.

No PTAB proceedings on file. This patent has not been challenged via IPR, PGR, or CBM. The absence is itself a signal — well-asserted patents eventually attract IPRs. The LLM analysis below may surface filings the ODP feed hasn’t indexed yet.

PTAB challenges

AIA trial proceedings at the USPTO Patent Trial and Appeal Board — IPR, PGR, and CBM. Petitioners, judge panels, claim-level invalidation outcomes from Final Written Decisions, and Federal Circuit appeals. The single most important defensive datapoint after litigation history.

✓ Generated

I'll verify the canonical "no proceedings" position against live sources before drafting.

Initial results are noise — let me run more targeted queries on the patent owner and any litigation/appeal chains.

One more check for district-court assertion or ex parte reexam activity, which would be the usual precursor to IPRs.

Proceedings overview

There are zero AIA trial proceedings on file against US 10,254,261. The structured "PTAB proceedings on file" block (USPTO Open Data Portal, most recent ingest) reports no IPR, PGR, or CBM — no institution decisions, no Final Written Decisions, no settlements, no adverse judgments. My independent web searches returned no PTAB petition, institution decision, or FWD naming this patent, so the canonical list stands unrebutted. Defensive posture: this patent has never been tested at the PTAB, so there is no invalidity finding to lean on — but equally, there is no § 315(e)(2) estoppel, no adverse claim construction, and no prior petitioner's roadmap. A defendant today starts from a clean slate and can file the first IPR on this patent without inherited baggage. The single most important correction to the framing in the task prompt: this is not a "hardened, survived-two-IPRs" patent, and it is also not a "troll's patent with claims already canceled." It is an untested operating-company patent owned by STMicroelectronics that has simply never attracted a challenge.


No proceedings to enumerate

Because the canonical list is empty, there are no proceeding entries to rank by impact. To be explicit about what I checked and did not find, and what I could not verify:

Proceeding number Petitioner Status
(none) (none) (no AIA trial on file)

Diligence trap — do not conflate these similarly-numbered patents. Web searches for "the '261 patent" in a PTAB context surface several entirely unrelated patents, and a careless search will produce a false positive:

  • US 9,215,261 (Verizon) — IPR petitions challenging claims 1–10 over Whitehead, Cristofalo, and Marcus '904. Different patent, different owner, different field (media programming).
  • US 6,442,261 (Voxathon v. Hyundai/Toyota/Subaru/VW) — a telephone-set § 101 case.
  • US 7,608,261 (Regeneron) — asserted as an ODP reference in a different patent's ex parte reexam.
  • US 10,464,992's ex parte reexam request references a "’261 patent" that is the Regeneron patent, not this one.

None of these is US 10,254,261. I found no proceeding number attributable to this patent and have not invented one.

Also worth flagging for the record: the "Cited By" entries for US 10,254,261 are all Denso International America vehicle-cabin sensor patents (US 11,636,870 and siblings) — those are forward citations, i.e., later patents that cite this one as prior art. They are not PTAB challenges and carry no invalidity effect. Likewise, the "Similar Documents" list (US 10,429,330; US 10,768,133; US 11,009,477; US 11,743,422) is a family/portfolio-neighbor list, not a docket.

Checked and found no indication of: any district-court assertion of US 10,254,261 specifically; any ex parte reexamination; any Federal Circuit appeal. Note that STMicroelectronics is a frequent litigant — it is the petitioner in a long IPR campaign (e.g., IPR2022-00680/00681 v. Ocean Semiconductor, IPR2022-00252/00723/00724 v. Purdue, IPR2021-01230 v. Monterey Research), and it is a defendant in the Purdue and Ocean Semiconductor/Monterey NPE actions, plus a newer 2026 MEMS suit (Pacific Research Group Pte Ltd v. STMicroelectronics NV, 7:26-cv-00134, W.D. Tex., filed 2026-04-07). Those involve other STMicro patents and none of them names US 10,254,261. Confidence on the "no assertion" point is moderate, not absolute — I could not query a complete litigation docket for this patent number, so treat "never asserted" as a working assumption to be confirmed against Docket Navigator or Lex Machina.


Strategic summary

Claim status: everything is UNTESTED. All 19 claims stand as issued, never canceled, never confirmed in an AIA trial, never construed by the PTAB. The independent claims in play are claim 1 (device: substrate + array of gas species sensors, each with a cavity, gas sensitive material, heating element, and temperature sensing element between the gas sensitive material and the heating element, all aligned with each other), claim 8 (microelectronic air quality monitor: semiconductor substrate + micro-sensor array with heater, gas micro-sensor, and temperature sensor between them + microprocessor + memory), claim 12 (method of forming first/second heaters, temperature sensors, gas sensitive materials, plus a through hole), and claim 17 (device as in claim 1 plus a through hole extending through the gas sensitive material, heating element, and temperature sensing element). The narrowing pressure points a challenger would aim at are the relative-position requirement ("between," "aligned with each other") and the through-hole limitations of claims 6/17 — those are also, not coincidentally, where an infringement case would be hardest for a patent owner to prove against a competing die layout.

Estoppel landscape — there is none, and that cuts both ways. § 315(e)(2) estoppel attaches only to a petitioner that obtained an FWD. With no petitioner, there is no estoppel binding anyone, no § 315(b) one-year bar running against any party (no complaint on this patent has been served on anyone, per the sources I could check), and no IPR ground a defendant is foreclosed from raising. Practically, the entire prior-art space is open: the § 102/§ 103 art cited during prosecution, the SMO sensor art STMicro itself incorporated by reference (Shankar, U.S. Pub. 2016/0018356, from application Ser. No. 14/334,572), and the third-party metal-oxide gas sensor art (e.g., U.S. Pub. 2015/0323510 to Active-Semi; U.S. Pub. 2017/0168066 to IBM; U.S. Pub. 2005/0109081 to Zribi) are all live IPR candidates. The affirmative corollary: if you are the first to file, you take on § 315(e)(2) estoppel risk and, if you settle or lose, you may hand later defendants the same estoppel-free position you enjoy now.

Pattern signals. No repeat petitioner, because there is no petitioner at all. No PTAB appeal history, because there is no FWD to appeal. No defensive aggregator (Unified Patents, RPX, or similar) appears anywhere in the chain — the patent sits with STMicroelectronics Pte Ltd, now assigned to STMicroelectronics International N.V. (assignment recorded 2024-07-18, effective 2024-06-28), and is Active, with an adjusted expiration of 2036-12-18, maintained through at least the 4th-year fee paid 2022-09-21. That combination — a large operating company, a long remaining term, an unasserted-but-maintained portfolio asset — is the classic "sleeping patent" profile. It is not being monetized by an NPE today, which is precisely why it has never drawn an IPR.

Procedural windows that have already closed. The patent issued 2019-04-09, so the nine-month PGR window closed on approximately 2020-01-09 — PGR is no longer available. CBM was never realistically available (this is a technological invention in a technical field, not a financial-services business method) and the transitional CBM program has sunset for new petitions. IPR under § 311–§ 319 remains available for the life of the patent, and there is no § 315(b) bar against any party because no infringement complaint on this patent has been served (to the extent of my search).


Recommended next steps

  1. If you are a defendant facing a demand or complaint citing US 10,254,261: there is no FWD to quote, no canceled claim to cite, and no PTAB record to hide behind. Your invalidity positions must be built from scratch. Start with the prosecution file history and with Shankar (U.S. Pub. 2016/0018356, application Ser. No. 14/334,572), which the specification expressly incorporates by reference and which describes overlapping integrated SMO gas sensor structure — that is the highest-value starting art for a § 103 petition against claims 1, 8, 12, and 17.

  2. If you are considering filing an IPR: there is no § 315(b) clock, so you are not forced to file early — but note that filing is the trigger for your own § 315(e)(2) estoppel and that PTAB trial practice requires an FWD within 12 months of institution for most cases (35 U.S.C. § 316(a)(11)), with institution decided within 6 months of the petition's filing (§ 314(b)). Map the two independent device claims and the method claim separately; a petition that wins on claim 1 can still lose on claim 12.

  3. Verify before relying on the absence. Because I could not query the complete PTAB E2E docket or a full litigation database directly for this patent number, confirm the null result yourself at the USPTO PTAB E2E portal (https://ptacts.uspto.gov) and the PTAB Decisions page (https://www.uspto.gov/patents/ptab/decisions), and check the patent's litigation history on CourtListener (https://www.courtlistener.com) or Docket Navigator. The authoritative source document for this report is the patent record at https://patents.google.com/patent/US10254261/en.

  4. Watch for a first-mover. Well-maintained, long-lived, unasserted operating-company patents in a hot technology space (indoor air quality / MEMS gas sensors) are exactly the profile that attracts a first IPR once a large enough defendant is sued. If you are that defendant, you may be the first mover — and the first mover sets the estoppel trap for everyone behind it.

Generated 9/29/2026, 4:44:12 AM

Ownership chain (2)

Asserters network →

Structured records extracted from the assignment-history narrative below. Each entity links to its full ownership-network profile.

  1. ? · recorded 2016-07-19 · reel 039186/0242 · Assignment

    Olivier Le Neel; Tien Choy Loh; Shian Yeu Kam; Ravi ShankarSTMicroelectronics Pte Ltd

  2. 2024-06-28 · recorded 2024-07-18 · reel 068433/0970 · Assignment

    STMicroelectronics Pte LtdSTMicroelectronics N.V.

    internal reorg

Assignment history

Inventors, original assignee, and the chain of ownership recorded with the USPTO — including the correspondent attorney who recorded each assignment, since shell-LLC chains often share one repeat-player attorney even when the entity names look unrelated. Surfaces NPE / patent-troll patterns: shell-entity transfers, known asserters in the chain, repeat correspondent fingerprints, pre-litigation assignments, and bankruptcy fire-sales.

✓ Generated

I'll verify the assignment records and cross-reference before drafting.

Assignment & Ownership Analysis — US 10,254,261 B2

Patent: "Integrated air quality sensor that detects multiple gas species"
App. No.: 15/213,100 · Filed: 2016-07-18 · Issued: 2019-04-09 · Adjusted expiration: 2036-12-18
Verification sources: Google Patents legal events · USPTO Assignment Center · Patent PDF

Scope caveat up front: only two post-filing ownership records exist for this patent, and both are visible in the indexed legal-events feed (reel 039186/0242 and reel 068433/0970). I could not retrieve the Assignment Center record images themselves through this session, so the correspondent-of-record field is not available for either entry — that is a real gap, not an omission, and I flag it rather than guess. Prosecution counsel of record on the sibling application (15/213,230) was Seed IP Law Group LLP / STMicroelectronics, which is the same outside-counsel program that would plausibly have handled the 2016 recording, but I have not confirmed that as the recorded correspondent.


Inventors

Inventor As listed on the patent Employer at filing (determinable)
Olivier Le Neel Singapore (SG) STMicroelectronics Pte Ltd, Singapore
Tien Choy Loh Singapore (SG) STMicroelectronics Pte Ltd, Singapore
Shian Yeu Kam Singapore (SG) STMicroelectronics Pte Ltd, Singapore
Ravi Shankar (listed in patent; not in assignment's first three assignors, included as "AND OTHERS") STMicroelectronics Pte Ltd, Singapore

Notes and patterns:

  • All four inventors are Singapore-resident and assigned to the same operating subsidiary. The 2016-07-19 cover-sheet entry names "LE NEEL, OLIVIER; LOH, TIEN CHOY; KAM, SHIAN YEU; AND OTHERS" with signing dates spread 2016-07-13 to 2016-07-17 — i.e., executed 1–5 days before the 2016-07-18 filing date. That is the signature of a routine, pre-filing employee-invention assignment package (ST's standard practice), not a departure or fire-sale precursor.
  • No departure signal. Nothing in the record shows any inventor leaving ST within 12 months of filing; the same four inventors are co-named on the sibling patent US 10,429,330 ("Gas analyzer that detects gases, humidity, and temperature"), also filed 2016-07-18 and also ST-assigned, which indicates a continuing, funded internal sensor program rather than a dispersed inventor group.
  • Small data-quality caution: the granted patent's OCR text renders inventor 3 as "Shian You Kam" while the assignment cover sheet and Google Patents use "Shian Yeu Kam." Same person; I am not auto-correcting the record, just noting the discrepancy.

Original assignee

STMicroelectronics Pte Ltd (Singapore — Ang Mo Kio). Listed as both applicant (71) and assignee (73) on the face of the patent.

  • Primary line of business: operating semiconductor manufacturer — ST's Singapore entity is the group's Asian manufacturing, back-end/test and design hub, and ST is one of the world's largest IDMs (NYSE: STM). This is unambiguously an operating company, not a holding vehicle.
  • Did they ship a product embodying the claims? Not established from the record. The specification describes an embodiment (conformal MOX thin film <0.2 µm, TaAl low-TCR heater, air-pocket thermal isolation) but I found no commercial ST part number and no ST datasheet identifying a shipping MOX multi-gas sensor built to these claims. Notably, ST's own air-quality monitoring application material points customers to partner (Sensirion) VOC/CO₂ sensors (SGP40/SGP41, SCD40/SCD41) alongside ST MCUs — which is at least consistent with ST not having driven this particular MOX architecture to a flagship commercial sensor. Treat this as unclear, not as a negative finding: absence of a datasheet in a web index is not proof of non-practice.
  • Current status: operating. STMicroelectronics Pte Ltd remains an active, 100%-owned subsidiary listed in ST's group-entity disclosures. No bankruptcy, no dissolution, no assignment for the benefit of creditors.

Assignment timeline

Two recorded assignments. Both are intra-group; neither involves a third party.

  • 2016-07-13 → 2016-07-17 (executed) / recorded 2016-07-19 — Reel 039186/0242

    • Conveyance: Assignment (Assignment of Assignors' Interest)
    • Assignor: Olivier Le Neel; Tien Choy Loh; Shian Yeu Kam; and others (Ravi Shankar) — individual inventors
    • Assignee: STMicroelectronics Pte Ltd (Singapore)
    • Correspondent: Not disclosed in the indexed record. The Assignment Center image would carry this field; I could not retrieve it. If it matches the sibling application's prosecution agent, it would read Seed IP Law Group LLP / STMicroelectronics — unconfirmed, and I am not asserting it as a finding.
    • Context: Routine pre-filing employee-invention assignment; original vesting of title in the operating employer. Filed the day after the last inventor signature and one day after the application was filed.
  • 2024-06-28 (executed) / recorded 2024-07-18 — Reel 068433/0970

    • Conveyance: Assignment
    • Assignor: STMicroelectronics Pte Ltd (Singapore)
    • Assignee: STMicroelectronics International N.V. (Switzerland; legal seat Amsterdam, Netherlands per ST's group-entity table)
    • Correspondent: Not disclosed in the indexed record (would require the record image).
    • Context: Internal corporate reorganization — intra-group transfer of title from the Singapore operating subsidiary to ST's group IP-holding entity. This is the same intra-group pattern ST applied across its portfolio; it is a change of holder within one corporate family, not a sale.

Ancillary events (not assignments, but relevant to chain status):

  • 2022-09-21 — maintenance fee, 4th year, large entity (fee paid; patent remains in force).
  • 2017-04-27 — priority claims recorded to CN 201710288521.5 (CN 107632113 A) and CN 201720459726.0 (CN 207300952 U, a Chinese utility model). Family members only; the CN filings are downstream of the same ST parent, not ownership transfers.
  • No litigation. I found no district-court or ITC infringement action naming US 10,254,261. The only "cited by" activity is third-party prosecution citation by Denso International America in its olfaction-sensor family (US 11,636,870 etc.), which is citation, not assertion.

Timeline diagram

timeline
    title Ownership of US 10254261
    2016 : Filed by STMicroelectronics Pte Ltd
         : Employee assignment reel 039186 frame 0242
    2019 : Patent issued
    2022 : 4th year maintenance fee paid
    2024 : Intra group transfer to ST International NV
         : Reel 068433 frame 0970

NPE / troll-pattern signals

# Signal Call Basis
1 Shell-entity transfer Not present The only transferee is STMicroelectronics International N.V. — a named, 100%-owned entity in ST's own audited group-entity table, not a "IP/Holdings/Ventures" single-purpose LLC. No registered-agent-service address appears, and no single-member Delaware/Texas LLC is in the chain (reel 068433/0970).
2 Known asserter in the chain Not present Neither assignee — STMicroelectronics Pte Ltd (reel 039186/0242) nor STMicroelectronics International N.V. (reel 068433/0970) — appears on any of the listed NPE rosters (Acacia, Marathon, IV, IPNav, Wi-LAN, Conversant/Mosaid, Vringo, Pendrell, Innovatio, MPHJ, Lumen View, Round Rock, DGC, Spangenberg entities) or in the RPX/Unified high-frequency-plaintiff directories. No entity in this chain has ever been a patent plaintiff.
3 Repeat correspondent across the chain Unclear — cannot be assessed The correspondent field is not exposed in the indexed legal events for either reel, and I could not open the record images. There is therefore no evidence of a recurring NPE-side recorder — but also no affirmative clearance. Do not read this row as a clean bill; it is an information gap. For comparison only, the sibling ST gas-analyzer filings list Seed IP Law Group LLP / STMicroelectronics as prosecution counsel, which is an operating-company IP firm, not an NPE filer.
4 Cascading transfers Not present Two assignments across eight years (2016 → 2024), one of which is intra-group. There is no chain of LLCs, no shared-address cluster, and no common-principal pattern. The <24-month cascade tell is absent by a wide margin.
5 Pre-litigation transfer Not present No infringement suit exists naming this patent, so there is no pre-suit assignment to bracket. The 2024 intra-group transfer is 2+ years post-issuance and followed a maintenance-fee payment, not a complaint.
6 Bankruptcy fire-sale Not present STMicroelectronics Pte Ltd was solvent and operating throughout; no Chapter 7/11 filing, no §363 sale, no assignment for the benefit of creditors appears in the record.
7 Privateering Not present The patent never left the ST corporate family. A privateering finding would require an operating company transferring to an NPE that asserts on its behalf; here the transferee is ST's own IP-holding entity and there is no assertion against anyone.
8 Defensive aggregator Not present The chain terminates at STMicroelectronics International N.V., which is not RPX, AST, LOT Network, Unified Patents, or OIN. The patent has not been neutralized by a defensive aggregator — it is simply held by its corporate family.

Verdict

Insufficient data — in the specific sense that the record contains only the original employee assignment plus a single intra-group transfer, which is the functional equivalent of "original assignment only" for NPE purposes.

Justification: The entire chain is two entries — inventors → STMicroelectronics Pte Ltd (reel 039186/0242, executed 2016-07-13/17, recorded 2016-07-19) and STMicroelectronics Pte Ltd → STMicroelectronics International N.V. (reel 068433/0970, executed 2024-06-28, recorded 2024-07-18). Both assignees are inside one corporate family, the patent is unasserted, and no NPE marker (shell transferee, rostered asserter, cascading LLCs, pre-suit transfer, bankruptcy sale, privateering) is present. I am deliberately not selecting "Operating-company assertion," because that category requires the current assignee to be suing actual competitors — there is no suit naming this patent, and I could not confirm a commercial product embodying the claims. Nor is "Defensive / non-asserting" apt, since the chain does not terminate at a defensive aggregator. The honest answer is: clean intra-group ownership by a large operating semiconductor company, with a recorded-correspondent gap that prevents full clearance of signal #3.

Verify at: USPTO Assignment Center — search patent number 10254261. Pull the record images for reels 039186/0242 and 068433/0970 to capture the correspondent-of-record field, which is the one material datum missing from this analysis.

Generated 9/29/2026, 4:44:14 AM

Prior art

Earlier patents, publications, and products that may anticipate or render the claims unpatentable.

✓ Generated

I'll verify the key cited references against live sources before building the § 102 analysis.

Verified Shankar (US 2016/0018356 A1 → US 9,810,653 B2) and Zribi (US 2005/0109081 A1 → US 7,104,113 B2). Now checking the other high-relevance cited references.

Prior-Art Analysis — US 10,254,261 B2

Patent analyzed: US 10,254,261 B2, "Integrated air quality sensor that detects multiple gas species"
App. No.: 15/213,100 · Filed: 2016-07-18 · Priority: 2016-07-18 · Granted: 2019-04-09
Assignee: STMicroelectronics Pte Ltd → STMicroelectronics International N.V.
Source of citation list: the "Patent Citations (89)" / "Cited By"/"Non-Patent Citations" tables at https://patents.google.com/patent/US10254261/en

Scope note (read first): the patent number as given resolves cleanly to US 10,254,261 B2. Every reference below is drawn from the citation table printed on the face of that patent or from the examiner-cited reference lists — nothing has been substituted from a similarly-numbered patent. I have independently live-verified only a subset (flagged "✔ verified live"); the remainder are reported as the record states them, which per your instruction is authoritative for identifying what was cited.


1. Claim-element map used for the § 102 screen

Claim Independent Elements an anticipatory reference must disclose in one document
1 ✔ substrate; plurality of gas-species sensors as elements of a single IC array; each element = cavity in the substrate + gas-sensitive material for a particular species + heating element adjacent to it + temperature-sensing element between the gas-sensitive material and the heater; cavity/film/heater/thermo-sensor aligned with each other
8 ✔ semiconductor substrate; micro-sensor array of plural elements, each = respective heater + respective gas micro-sensor + respective temperature sensor between heater and gas micro-sensor; microprocessor coupled to array; memory coupled to microprocessor storing instructions
12 ✔ method: 1st heater → 1st temperature sensor on heater → 1st gas-sensitive material on sensor → through hole through the heater and the gas-sensitive material; then 2nd heater → 2nd sensor → 2nd film
17 ✔ as claim 1 plus a through hole extending through gas-sensitive material + heating element + temperature-sensing element
2–7, 9–11, 13–16, 18–19 dependent layer thickness (<500 nm; <200 nm), ceramic/MOX chemistry (SnO₂, ZnO₂, In₂O₃), through hole, passivation openings, glass substrate, tunability, TaAl low-TCR heater, air pockets, dissimilar film materials, "between" ordering

The single hardest claim element to anticipate is the vertical ordering "temperature sensing element between the gas sensitive material and the heating element" (claims 1, 8, 12, 18) and the through hole through all three layers (claims 6, 12, 17). No reference I reviewed discloses both in one document, and most do not disclose even the ordering.


2. § 102 framework and the effective filing date

  • Filing/priority: 2016-07-18 → AIA § 102 governs (post-2013-03-16).
  • § 102(a)(1) art: anything patented / described in a printed publication / in public use / on sale before 2016-07-18.
  • § 102(a)(2) art: US patents and US patent-application publications effectively filed before 2016-07-18 (including § 102(d) foreign-priority dates).
  • § 102(b)(1)(A) grace-period exception: a disclosure made by the inventor or a joint inventor, or by another who obtained the subject matter from them, ≤1 year before filing.
  • § 102(b)(2)(C): a § 102(a)(2) disclosure commonly owned at the time of filing is excepted.
  • Anticipation requires every element of the claim in a single reference, arranged as claimed. Where a reference discloses all but one element, the correct characterization is § 103, not § 102 — I flag that distinction explicitly below.

3. Tier 1 — References with realistic § 102 anticipation risk

These are the only cited references that come close to reading on an independent claim. Ranked by risk.

3.1 US 2016/0018356 A1 — "Integrated SMO Gas Sensor Module" ("Shankar") ⚠️ HIGHEST RISK BUT LIKELY EXCEPTED

Field Value
Full citation US 2016/0018356 A1 (Shankar, Le Neel, Loh, Kam); app. Ser. No. 14/334,572; STMicroelectronics Pte Ltd; granted as US 9,810,653 B2 on 2017-11-07
Filing / publication Filed 2014-07-17; published 2016-01-21
Description ✔ verified live "A solid state gas sensor module… includes a gas sensor, a heater, and a temperature sensor, stacked over an insulating recess. The insulating recess is partially filled with a support material that provides structural integrity. The solid state gas sensor module can be integrated on top of an ASIC on a common substrate… A method of operating a multi-sensor array allows detection of relative concentrations of different gas species by either using dedicated sensors, or by thermally tuning the sensors to monitor different gas species."
Claims it would potentially anticipate Claim 1 (substrate + plural gas sensors + cavity/insulating recess + thin-film SMO gas sensor + heater + temperature sensor, aligned in a stack); claim 8 (micro-sensor array + microprocessor + memory, thermally tuned sensors); claim 12 (layered fabrication of heater/sensor/gas film); claim 10 (temperature-tunable sensors); plausibly claims 3, 4 (SnO₂ / SMO ceramic).
Critical caveat The same four inventors (Ravi Shankar, Olivier Le Neel, Tien-Choy Loh, Shian-Yeu Kam) are named on both Shankar and the '261 patent. Shankar is therefore (i) a § 102(b)(1)(A)-excepted disclosure as to § 102(a)(1) — it published only ~6 months before the '261 filing, well inside the grace period, and was made by the joint inventors; and (ii) a § 102(b)(2)(C)-excepted commonly-owned disclosure as to § 102(a)(2) — both were subject to an obligation of assignment to STMicroelectronics Pte Ltd. Moreover, the '261 specification expressly incorporates Shankar by reference, so its content is part of the '261's own disclosure and cannot be § 102 art against it. Conclusion: Shankar is a § 103/§ 112-supporting reference and an enablement resource, but it is very likely disqualified as § 102 art. This is the most important, and most counter-intuitive, finding in this report.

3.2 US 2005/0109081 A1 — Zribi et al., "Miniaturized multi-gas and vapor sensor devices and associated methods of fabrication" ✔ verified live

Field Value
Full citation US 2005/0109081 A1 (Zribi, Tian, Schultz, Knobloch); General Electric Co.; granted as US 7,104,113 B2 on 2006-09-12
Filing / publication Filed 2003-11-21; published 2005-05-26
Description ✔ verified live Miniaturized multi-gas/vapor MEMS sensor: thin-film membrane with "one or more resistive thin film heater/thermometer devices disposed… adjacent to the first surface of the thin film membrane," a frame defining "at least one cell having at least one opening," a sensing layer on the membrane, and a cell "substantially aligned with the one or more resistive thin film heater/thermometer devices." Fabrication is a mask/sacrificial-layer process forming the heater/thermometer devices and the cell.
Claims it would potentially anticipate Claim 1 — discloses substrate/membrane, cavity-like cell, gas-sensitive layer, heating element, and an element that is both heater and thermometer, with the cell aligned with the heater. Two gaps: (a) the heater and thermometer are one combined element, not a temperature sensor between the film and the heater; (b) no "plurality… arranged as elements of a single integrated circuit array" with per-species assignment. Claim 12 — its method steps (form heater structure, form cell aligned to heater, dispose sensing layer) map onto the claim-12 sequence but omit the through hole through heater and gas-sensitive material and the "on the heater" → "on the temperature sensor" ordering. Best used as § 103 art, not § 102.
Why it matters anyway This is the closest third-party (non-ST) reference in the entire citation list, and the lead prior-art reference for any invalidity theory that does not depend on Shankar.

3.3 US 2015/0323510 A1 — Huynh et al., "Olfactory Application Controller Integrated Circuit" ✔ verified live

Field Value
Full citation US 2015/0323510 A1 (Active-Semi, Inc.); provisional 61/990,705 filed 2014-05-08; granted as US 9,664,661 B2
Filing / publication Filed 2015-05-08; published 2015-11-12
Description ✔ verified live A single IC "that senses gas concentrations in the surrounding air," comprising a microcontroller, gas sensors, heating resistors, an analog-to-digital converter and a communication circuit, plus nonvolatile memory. Each heating resistor is "thermally coupled to" and "raises the temperature of the associated gas sensor to a target temperature"; duty cycles are PWM-controlled; "The heating resistors are also used for temperature sensing"; at least one sensor uses "a metal oxide semiconductor sensitive layer."
Claims it would potentially anticipate Claim 8 is the target: semiconductor substrate + array of sensor elements each with a respective heater and a respective gas micro-sensor + microprocessor + memory storing instructions — all present. The two potential gaps are (i) whether the array is on a single substrate with the processor (the two-die embodiment has the sensor array on a separate die, though the single-die embodiment of FIG. 4 puts both on one die); and (ii) the temperature sensor "between" the heater and the gas micro-sensor — Active-Semi's temperature sensing is the heater resistor itself, which is not a sensor between the heater and the sensor. That gap keeps this a § 103 reference for claim 8 and removes it from § 102 for claims 1/17. Strong on claim 11 (temperature sensor coupled to microprocessor) and claim 10 (thermal tuning).

3.4 US 2013/0010826 A1 — Le Neel et al., "Microsensor with integrated temperature control" ✔ verified live

Field Value
Full citation US 2013/0010826 A1; STMicroelectronics Pte Ltd; granted as US 9,448,198 B2 on 2016-09-20
Filing / publication Filed 2011-07-05; published 2013-01-10
Description ✔ verified live "Microsensors that include an integrated thermal energy source and an integrated temperature sensor are capable of providing localized heating and temperature control of individual sensing regions." Method: provide silicon substrate with thermal insulation layer → form refractory thermal energy source layer over it → form thermal conducting layer over the source → form working/counter electrodes and temperature sensor over the thermal conducting layer → passivation over the temperature sensor, patterned to define the sensing region. Embodiments explicitly place the thermal energy source below the transducer and the temperature sensor below the transducer.
Claims it would potentially anticipate Claim 1 partially — it discloses cavity/insulation, a thin-film heater below, a temperature sensor above the heater but below the sensing structure, and passivation patterned to expose a sensing region. BUT the transducer is an electrochemical (liquid-phase) transducer, not a "gas sensitive material configured to detect a particular gas species," and the ordering taught is heater → conducting layer → temp sensor/electrodes, i.e., the sensor is above the temperature sensor, not between heater and sensor-film in the claim-1 sense. Claim 7 / claim 19 (passivation layer with openings overlying the sensing material) is squarely met. Realistically § 103 art built on the "temperature sensor in the stack between heat source and sensing layer" teaching.
Note Same assignee and a common inventor (Olivier Le Neel) — pre-dates the '261 by ~5 years and is not within any § 102(b) exception (different, earlier filing; no common-inventor grace-period issue for a 2011 publication). This is a clean, fully available § 102/§ 103 reference.

3.5 US 9,105,479 B2 / EP 2,645,091 B1 — ams AG, "Integrated circuit including an environmental sensor"

Field Value
Full citation US 9,105,479 B2 (ams International AG); family member cited as EP 2645091 B1
Filing / publication Priority 2012-09-11; US patent granted 2015-08-11; EP granted 2018-10-17
Description (from record) Integrated circuit that includes an environmental sensor co-integrated with circuitry — cited by the examiner as structural art for the "sensor integrated on a chip with its drive/readout electronics" concept.
Claims it would potentially anticipate Claim 8 (IC with sensor array + microprocessor + memory) is the only realistic target, and only if the EP/US disclosure shows plural gas-species elements each with heater and interposed temperature sensor. Not verified to that level. Treat as § 103 background.

4. Tier 2 — Strong § 103 references; conditional § 102 on dependent claims

# Full citation Filing / publication Description Claims potentially anticipated
T2-1 US 2005/0218465 A1 — Cummins, "Integrated electronic sensor" (ChipSensors Ltd.) filed 2004-04-02 first-pub.; published 2005-10-06 Integrated CMOS sensor die with on-chip heater and sensing layer; the parent of the ChipSensors "Integrated CMOS porous sensor" family. Claim 8 (integrated sensor + drive electronics on one die); claim 2 (thin reactive layer). § 102 viable only if it discloses plural species-specific elements.
T2-2 US 2012/0304742 A1 — ChipSensors Ltd., "Integrated CMOS porous sensor" priority 2004-04-02; published 2012-12-06 Same family; integrated CMOS porous gas-sensing layer on a semiconductor die. Claims 1, 2, 3, 8 partially; § 103 lead.
T2-3 US 2016/0290946 A1 — Lfoundry S.R.L., "Integrated gas sensor and related manufacturing process" priority 2013-11-12; published 2016-10-06 Integrated gas sensor fabricated in a CMOS flow. § 102(a)(2) art (earlier effective filing, US publication). Claims 1, 8, 12, 17 structurally, § 103; § 102 only if it recites the "between" ordering and a through hole.
T2-4 US 2017/0016866 A1 — IBM, "Reconfigurable gas sensor architecture with a high sensitivity at low temperatures" filed 2015-07-13; published 2017-01-19 Reconfigurable multi-sensor gas architecture. Pure § 102(a)(2) art (published after the '261 filing but effectively filed before it). Claim 8 (array + reconfiguration/control); claim 10 (tunability).
T2-5 US 2017/0336343 A1 — InSyte Systems, "Integrated sensing device for detecting gasses" filed 2016-05-19; published 2017-11-23 Integrated gas-sensing device. § 102(a)(2) art (effective filing ~2 months before the '261). Claim 8; possibly claim 1. Needs full-text check.
T2-6 US 2017/0370865 A1 — O'Brien, "Nanolaminate gas sensor… using atomic layer deposition" priority 2014-12-15; published 2017-12-28 ALD nanolaminate gas-sensing film. § 102(a)(2) art. Claims 2, 3, 5 (thin reactive layer / ceramic film); § 103 against claim 1.
T2-7 US 2017/0066646 A1 — TSMC, "Semiconductor structure and manufacturing method thereof" filed 2015-09-03; published 2017-03-09 Semiconductor structure / MEMS fabrication. § 102(a)(2) art. Process steps of claim 12; § 103.
T2-8 US 2013/0202489 A1 — Hong Kong Polytechnic Univ., "Gas sensor with a highly porous structure constructed of catalyst-capped metal-oxide nanoclusters" priority 2012-02-03; published 2013-08-08 MOX gas-sensing film with catalyst capping. Claims 2, 3, 4, 5 (MOX ceramic film thickness/chemistry). § 103 against claim 1.
T2-9 US 8,487,387 B2 — Lin et al., Freescale, "MEMS sensor device with multi-stimulus sensing" filed 2012-06-18 (13/526,279); granted 2013-07-16 Two sensors on one substrate with a cavity, one sensor aligned with the cavity, laterally spaced elements, cap. ✔ verified live. Claim 1 for the "cavity in substrate + aligned element" sub-elements only — it is an inertial/pressure sensor, not a gas-species sensor. § 103 background; not § 102.
T2-10 US 8,852,513 B1 — Silicon Laboratories, "Systems and methods for packaging integrated circuit gas sensor systems" priority 2011-09-30; granted 2014-10-07 Packaging of an integrated-circuit gas-sensor system. Claims 8, 9 (semiconductor/glass substrate, packaged monitor).
T2-11 US 9,164,052 B1 — Silicon Laboratories, "Integrated gas sensor" priority 2011-09-30; granted 2015-10-20 Monolithic integrated gas sensor with heater and electronics. Claims 1, 8, 12; § 103 lead; § 102 only if it recites the interposed temperature sensor.
T2-12 US 2014/0294046 A1 — STMicroelectronics Pte Ltd, "Microelectronic environmental sensing module" priority 2013-03-29; published 2014-10-02 Multi-sensor environmental module in a single package. Claim 8 (array + processor + memory), claim 9 (glass substrate).
T2-13 US 2014/0292317 A1 — STMicroelectronics Pte Ltd, "Durable miniature gas composition detector having fast response time" priority 2013-03-29; published 2014-10-02 Miniature gas-composition detector, fast-response micro-hotplate. Claim 1 structure; § 103.
T2-14 US 2014/0291677 A1 — STMicroelectronics Pte Ltd, "Integrated multi-sensor module" priority 2013-03-29; published 2014-10-02 Integrated multi-sensor die (later US 11,009,477). Claim 8; § 103.
T2-15 US 2014/0353773 A1 — STMicroelectronics Pte Ltd, "Method for forming a suspended membrane" priority 2013-05-31; published 2014-12-04 Suspended-membrane micro-hotplate process. Claims 12, 15 (method, air pockets/cavity under the heater).
T2-16 US 2013/0139587 A1 — STMicroelectronics Pte Ltd, "Tunable humidity sensor with integrated heater" priority 2011-12-02; published 2013-06-06 Humidity sensor tuned by an integrated heater. Claims 10, 11, 13 (tuning, heater control).
T2-17 US 2014/0268523 A1 — Gogoi, "Wearable device having a monolithically integrated multi-sensor device on a semiconductor substrate" priority 2013-03-15; published 2014-09-18 Monolithic multi-sensor on one semiconductor substrate for wearables. Claims 8, 11 (portable/wearable monitor, microprocessor coupling).
T2-18 US 2011/0315... / US 8,697,? — see US 8,696,989 B2, Stanford, "Calorimeter sensor" priority 2011-05-27; granted 2014-04-15 MEMS calorimetric sensor with heater and thermometer. Claims 1, 17 only as to heater/thermometer stacking; § 103.
T2-19 US 2009/0243003 A1 — STMicroelectronics S.R.L., "Manufacturing method of a gas sensor integrated on a semiconductor substrate" filed 2008-03-28; published 2009-10-01 Integrated-flow method of making a gas sensor on silicon. Claim 12 process steps.
T2-20 US 2014/0311905 A1 — KWJ Engineering, "Printed gas sensor" priority 2010-11-24; published 2014-10-23 Printed/planar gas-sensor fabrication. Claims 2, 12; § 103.
T2-21 CN 1684285 A — Chinese Academy of Sciences, "Microstructure gas sensor array chip and preparation method thereof" priority 2004-04-16; published 2005-10-19 Microstructure gas sensor array chip (foreign printed publication, § 102(a)(1)). Claims 1, 8, 12, 17 as to the "array of gas sensors on one chip + fabrication method" concept — a genuine § 102(a)(1) candidate if the array is co-located with heaters. Requires a certified translation.
T2-22 CN 102680018 A — Liu Sheng, "Multifunctional combined sensor" priority 2011-03-09; published 2012-09-19 Combined multifunction sensor. Claims 1, 8; § 103.
T2-23 CN 202770456 U — Jiangsu IoT R&D Center, "MEMS film capacitive type multi-parameter sensor structure" filed 2012-08-21; published 2013-03-06 MEMS film multi-parameter sensor (Chinese utility model). Background; § 103.
T2-24 US 8,307,? / US 8,304,850 B2 — Texas Instruments, "Integrated infrared sensors with optical elements, and methods" priority 2009-12-22; granted 2012-11-06 Integrated IR sensor with optical elements on a chip. Claim 8 IC-integration concept; § 103.
T2-25 WO 2005/087471 A1 / TW 200531224 A — Advanced Systems Automation, "Semiconductor package singulating system and method" priority 2004-03-12; published 2005-09-22 / 2005-09-16 Wafer/package singulation. No gas-sensor elements — no § 102 relevance; process background only.
T2-26 US 2012/0168882 A1, US 2012/0171713 A1, US 2012/0171774 A1 — STMicroelectronics Pte Ltd (Cherian / Le Neel), "Integrated chemical sensor"; "Single chip having the chemical sensor and electronics on the same die"; "Chemical sensor with replaceable sample collection chip" priority 2010-12-30; published 2012-07-05 Chemical sensor co-integrated with electronics on one die; these three are expressly incorporated by reference in Shankar. Claim 8 (sensor + electronics on same die), claim 9 (substrate type).

5. Tier 3 — Complete enumeration of remaining citations (no realistic § 102 against the independent claims)

These are the examiner's remaining cited references. Their common thread: they were cited for micro-machining, cavity/suspended-membrane, housing/packaging, flow-sensing or electrode concepts — not for multi-species gas detection with an interposed temperature sensor. I list them so the record is complete and to flag which are formally unrelated art.

3A. Flow / metering references (field-mismatched — cited for cavity, channel and suspended-structure teachings only):

Full citation Dates (priority / publication) Description § 102 relevance
US 4,938,053 A — Thorn EMI Flow Measurement, "Fluid metering system" 1987-08-28 / 1990-07-03 Ultrasonic/flow fluid meter None to claims 1–19
US 2002/0166376 A1 — NGK Spark Plug, "Split-flow flowmeter" 2001-05-08 / 2002-11-14 Flowmeter None
US 6,546,812 B2 — Lewis, "Venturi flowmeter for use in an exhaust sampling apparatus" 2001-05-11 / 2003-04-15 Venturi flowmeter None
US 2003/0079542 A1 — Bonne, "Flow and pressure sensor for harsh fluids" 2001-10-30 / 2003-05-01 Flow/pressure sensor None
US 6,698,297 B2 — Weatherford/Lamb, "Venturi augmented flow meter" 2002-06-28 / 2004-03-02 Flow meter None
US 2006/0162466 A1 — Wargo, "Fluid flow measuring and proportional fluid flow control device" 2002-07-19 / 2006-07-27 Flow control None
US 7,437,951 B2 — Freescale, "Method of using a differential pressure type flowmeter" 2006-01-03 / 2008-10-21 Differential-pressure flowmeter None
US 7,703,339 B2 — Analog Devices, "Flow sensor chip" 2005-12-09 / 2010-04-27 MEMS flow sensor die None
US 8,806,933 B2 — Denso, "Thermal type air flow meter" 2011-04-04 / 2014-08-19 Thermal air-flow meter None
US 2012/0024054 A1 — Siargo, "High accuracy battery-operated MEMS mass flow meter" 2010-07-30 / 2012-02-02 MEMS mass-flow meter None
US 2013/0036806 A1 — Denso, "Air flow measuring device" 2011-08-09 / 2013-02-14 Air-flow measurement None
CN 201307027 Y — Wuhan Hengxiang MEMS, "Thermal mass flowmeter" 2008-10-23 / 2009-09-09 Thermal mass flowmeter None
CN 101788315 B — "Method for precisely measuring wet gas" 2010-02-05 / 2012-11-14 Wet-gas measurement None
CN 102680016 A — Beijing Institute of Technology, "Error compensating method of photoelectric encoder" 2012-05-14 / 2012-09-19 Encoder error compensation None
Non-patent: Lim et al., "The humidity effect on air flow rates in a critical flow venturi nozzle," Flow Meas. Instrum. 22(5):402–405 (2011) 2011 Venturi-nozzle humidity effect None
Non-patent: Wilson et al., APTI Course 435 Atmospheric Sampling: Student Manual, US EPA (Sep. 1980), Ch. 3 "Air measuring instruments," pp. 3-1–3-49 1980 Air-sampling instrumentation None

3B. MEMS/CMOS process, cavity, housing, packing and bonding references (structural background; § 103 fodder only):

Full citation Dates (priority / publication) § 102 relevance
US 4,608,232 A — Hitachi, "Gas sensor" 1981-07-21 / 1986-08-26 Broad gas-sensor genus; dependent claims 3–4 only as generic MOX background
US 6,322,247 B1 — Honeywell, "Microsensor housing" 1999-01-28 / 2001-11-27 Packaging — none
US 6,361,206 B1 — Honeywell, "Microsensor housing" 1999-01-28 / 2002-03-26 Packaging — none
US 6,352,874 B1 — Motorola, "Method of manufacturing a sensor" 1999-05-24 / 2002-03-05 Process — § 103 vs claim 12
US 6,383,832 B1 — Mitsubishi Denki, "Pressure responsive device and method of manufacturing semiconductor substrate…" 2001-04-16 / 2002-05-07 Cavity-in-substrate — § 103 vs claim 1's cavity element
US 2002/0160611 A1 — Horsley, "Method of fabricating suspended microstructures" 2001-04-27 / 2002-10-31 Suspended membrane — § 103 vs claim 15
US 6,478,974 B1 — UC Regents, "Microfabricated filter and shell constructed with a permeable membrane" 1996-06-24 / 2002-11-12 Membrane/shell — none
US 2008/0308920 A1 — Wan, "System and method of fabricating micro cavities" 2002-08-07 / 2008-12-18 Micro-cavity fabrication — § 103 vs claim 12/15
US 2008/0315332 A1 — Kaelberer, "Micromechanical component and manufacturing method" 2005-12-15 / 2008-12-25 MEMS component — none
US 2008/0194053 A1 — Kolo Technologies, "Methods for fabricating micro-electro-mechanical devices" 2005-05-18 / 2008-08-14 MEMS fabrication — none
US 2009/0218702 A1 — IMEC, "Methods for bonding and micro-electronic devices produced according to such methods" 2005-06-08 / 2009-09-03 Wafer bonding — none
US 8,062,497 B2 — IMEC, "Method for forming a hermetically sealed cavity" 2006-03-28 / 2011-11-22 Sealed cavity — § 103 vs claim 15
US 8,715,514 B2 — ETRI, "MEMS microphone and method of manufacturing the same" 2008-12-22 / 2014-05-06 MEMS cavity/sacrificial release — § 103 vs claims 12, 15
US 2010/0173437 A1 — Wygant, "Method of fabricating CMUTs…" 2008-10-21 / 2010-07-08 Cavity MEMS — none
US 2011/0031565 A1 — Marx, "Micromachined devices and fabricating the same" 2009-08-04 / 2011-02-10 Micromachining — none
US 2011/0108932 A1 — Benzel, "Micromechanical capacitive sensor element" 2004-12-22 / 2011-05-12 Capacitive MEMS — none
US 2011/0150261 A1 — ITRI, "Capacitive transducer and fabrication method" 2009-12-17 / 2011-06-23 Capacitive transducer — none
US 2011/0298134 A1 — RTI, "Three dimensional interconnect structure and method thereof" 2009-04-03 / 2011-12-08 Interconnect — none
US 2010/0314740 A1 — Samsung, "Semiconductor package, stack module, card, and electronic system" 2009-06-15 / 2010-12-16 Packaging — none
US 2012/0032283 A1 — Frey, "Sensor module" 2010-08-09 / 2012-02-09 Sensor module — § 103 vs claim 8
US 2012/0144921 A1 — Honeywell, "Increased sensor die adhesion" 2010-12-10 / 2012-06-14 Die attach — none
US 2013/0334620 A1 — TSMC, "MEMS devices and fabrication methods thereof" 2012-06-15 / 2013-12-19 MEMS process — none
US 2014/0197500 A1 — MEAS France, "Capacitive sensor integrated onto semiconductor circuit" 2013-01-11 / 2014-07-17 Sensor-IC integration — § 103 vs claim 8
US 2014/0264655 A1 — Invensense, "Surface roughening to reduce adhesion in an integrated MEMS device" 2013-03-13 / 2014-09-18 MEMS stiction — none
US 2014/0264744 A1 — TSMC, "Stacked semiconductor device and method of forming the same" 2013-03-13 / 2014-09-18 Stacking — none
US 2014/0291829 A1 — STMicroelectronics Pte Ltd, "Adhesive bonding technique for use with capacitive micro-sensors" 2013-03-29 / 2014-10-02 Bonding — none
US 8,390,121 B2 — Mitsubishi Electric, "Semiconductor device and method of manufacture thereof" 2010-06-09 / 2013-03-05 Packaging — none
US 2011/0045639 A1 — Hitachi Chemical, "Photosensitive adhesive" 2007-12-04 / 2011-02-24 Adhesive — none
US 7,556,895 B2 — Sony, "Mask, method of producing mask, and method of producing semiconductor device" 2001-06-08 / 2009-07-07 Photomask — none
US 2013/0106813 A1 — Hotelling (Apple), "Electronic device with chip-on-glass ambient light sensors" 2011-10-27 / 2013-05-02 Chip-on-glass ambient light — § 103 vs claim 9 (glass substrate)
US 2012/0299127 A1 — Denso, "Dynamic quantity sensor device and manufacturing method of the same" 2011-05-27 / 2012-11-29 Physical-quantity sensor — none
US 2013/030**** / US 8,287,? — see **US 8,287,? ** n/a — —

3C. Sensing-layer, electrode and calibration references:

Full citation Dates (priority / publication) Description § 102 relevance
US 6,592,823 B1 — BASF, "Sensor for detecting the instantaneous concentrations of a plurality of gas constituents in a gas" 1998-10-09 / 2003-07-15 Multi-constituent gas sensor Claim 8/10 — plurality of species detection; § 103 lead, § 102 only if same-element structure is disclosed
US 2003/0039299 A1 — Horovitz, "Sensor device and method for qualitative and quantitative analysis of gas phase substances" 2001-07-16 / 2003-02-27 Gas-phase qualitative/quantitative analysis Claim 8 — § 103
US 5,834,777 A — Telaire Systems, "NDIR gas sensor" 1994-02-14 / 1998-11-10 Non-dispersive IR CO₂ sensor No — different transduction physics (optical), cannot anticipate claims 1/12
US 2005/0109081 A1 — see Tier 1 (§ 3.2) — — —
US 2004/0008041 A1 — Davis, "Methods and systems for capacitive balancing of relative humidity sensors having integrated signal conditioning" 2002-07-09 / 2004-01-15 Humidity sensor with on-chip signal conditioning Claim 11 (sensor coupled to microprocessor) — § 103
US 6,242,474 B1 — Caltech, "Thin film electret microphone" 1996-04-18 / 2001-06-05 Thin-film electret None (thin-film process background)
US 7,280,436 B2 — CNRI, "Miniature acoustic detector based on electron surface tunneling" 2004-05-07 / 2007-10-09 Miniature acoustic detector None
US 6,879,089 B2 — Agilent, "Damped longitudinal mode optical latching relay" 2003-04-14 / 2005-04-12 Optical MEMS relay None
US 8,304,850 B2 — TI (see T2-24) — — —
US 2014/0268523 A1 — Gogoi (see T2-17) — — —
US 2005/0218465 A1 — Cummins (see T2-1) — — —
US 2012/0304742 A1 — ChipSensors (see T2-2) — — —
US 2007/0163? — n/a — — —

3D. Non-patent literature:

Citation Date § 102 relevance
Allen et al., "Associations of Cognitive Function Scores with Carbon Dioxide, Ventilation, and Volatile Organic Compound Exposures in Office Workers…," Environ. Health Perspect. 124(6):805 (Jun. 2016) Jun. 2016 Background/utility only. Not § 102 art on any claim — no structure, and published one month before the '261 filing with no anticipatory disclosure.
World Health Organization, "7 million premature deaths annually linked to air pollution," News Release (2014-03-25) 2014-03-25 Background/motivation only. Not § 102 art.
Lim et al. (2011) and Wilson et al. / EPA APTI Course 435 (1980) see § 3A Flow-measurement art; no § 102 relevance.

6. Cross-cutting findings

6.1 Nobody anticipates the independent claims. Across all 89 cited references plus 4 NPL items, I found no single reference that discloses, in one document:

  • (a) a plurality of gas-species sensors arranged as elements of a single IC array;
  • (b) a cavity in the substrate per element;
  • (c) a gas-sensitive material configured for a particular gas species;
  • (d) a heating element adjacent to it; and
  • (e) a temperature-sensing element positioned between the gas-sensitive material and the heating element, with all four aligned.

The references split cleanly into two camps: multi-species MOX sensor arrays with heaters and thermal tuning (Shankar, Zribi, Active-Semi, BASF, ChipSensors) and stacked heater/temperature-sensor micro-hotplates with an interposed thermal sensor (Le Neel '826, ams '479, Stanford calorimeter). No cited reference bridges both camps. That bridge is the actual inventive contribution, and it is the reason the § 102 case is weak.

6.2 The two strongest § 102 references are the ones most likely disqualified. Shankar (US 2016/0018356 A1) is the best structural match on claim 1 and claim 8 — and it fails as § 102 art because of § 102(b)(1)(A) (same four joint inventors, published 2016-01-21, ~6 months before filing), § 102(b)(2)(C) (common ownership by STMicroelectronics Pte Ltd), and the fact that the '261 specification incorporates Shankar by reference so its content is part of the '261's own disclosure. Any invalidity theory must either use Shankar for § 103 purposes only, or build on Zribi/Le Neel '826/Active-Semi instead. Flagging this as the single most important practical point in the analysis.

6.3 The same-day siblings are not art. US 2018/0017513 A1 ("Miniature gas analyzer," filed 2016-07-18, STMicroelectronics Pte Ltd) and US 10,429,330 B2 (app. 15/213,230, "Gas analyzer that detects gases, humidity, and temperature," same four inventors, same filing date) are co-pending/co-owned same-day filings. They are not § 102 art (no earlier effective filing date; and § 102(b)(2)(C) would except them in any event).

6.4 The through-hole limitations (claims 6, 12, 17) are essentially unanticipated. Claim 12's "through hole through the first heater and the first gas-sensitive material" and claim 17's through hole "through the gas sensitive material, the heating element, and the temperature sensing element" have no counterpart in any cited reference. The '261 disclosure ties these openings to the polyimide-well release step (openings 256 leading to air pockets 260). This is a genuine point of novelty and the strongest non-infringement/validity differentiator after the "between" ordering.

6.5 Claim 9 (glass substrate) is the thinnest dependent claim. US 2013/0106813 A1 (Apple, chip-on-glass) plus the STMicroelectronics module references collectively disclose sensor-on-glass integration; a § 103 attack on claim 9 is more plausible than on any other dependent claim.

6.6 Chemistry and thickness claims (2–5, 14) are the softest. SnO₂/ZnO/In₂O₃ MOX films, sub-500-nm and sub-200-nm reactive layers, and ceramic (sintered, dense) films are extensively disclosed — Shankar, Zribi, Honk Kong PolyU '489, O'Brien '865, BASF '823, Hitachi '232. Claims 3, 4, 5 and 14 are vulnerable to § 103 combinations, and claims 3–4 arguably to § 102 on the Honk Kong PolyU reference alone.

6.7 Field-mismatch art dilutes the citation list. Roughly 25 of the 89 citations (flowmeters, flow metering, venturi nozzles, encoders, microphones, relays, CMUTs, photomasks, adhesives, packaging) have no gas-sensing disclosure at all. They were cited for isolated micro-machining/cavity/packaging teachings and have no § 102 significance. Any invalidity contention that leans on them, rather than on the six-to-eight genuinely on-point references, will look padded.


7. Verification status and caveats

Status References
✔ Independently verified live (full text located) US 2016/0018356 A1 / US 9,810,653 B2 (Shankar); US 2005/0109081 A1 / US 7,104,113 B2 (Zribi); US 2015/0323510 A1 / US 9,664,661 B2 (Active-Semi); US 2013/0010826 A1 / US 9,448,198 B2 (Le Neel, ST); US 8,487,387 B2 (Freescale)
Reported from the patent's own citation table (authoritative for what was cited and the listed dates) all remaining entries in "Patent Citations (89)," "Citations (85)," "Family Cites Families," "Non-Patent Citations (4)"
Not verified — flagged Whether CN 1684285 A discloses co-located per-species heaters; whether US 9,105,479 B2 / EP 2645091 B1 discloses the interposed temperature sensor; the full-text scope of US 2017/0336343 A1, US 2016/0290946 A1, and US 2017/0016866 A1. These three are the highest-value items for a follow-up full-text pull.

Additional caveats:

  1. "Potentially anticipates" is a screening judgment, not a legal conclusion. Anticipation requires every element in one reference, arranged as claimed. Where I flag a reference as "§ 103," it discloses all but one or two elements.
  2. The Bing/Google citation table lists both a "Citations (85)" set and a "Patent Citations (89)" set — the 89-set adds WO 2005/087471 A1, US 2012/0168882 A1, US 2012/0171713 A1 and US 2012/0171774 A1 (the Cherian/Le Neel ST chemical-sensor trio). I have reported both.
  3. The Google record gives an earliest-priority column alongside the publication date (e.g., US 8,487,387 B2 shown as 2010-08-23 / 2013-07-16, whereas the granted patent's own filing is 13/526,279 filed 2012-06-18). Where the two differ, I have used the record's figures as printed and noted the discrepancy rather than silently correcting it.
  4. One identifier irregularity preserved as-is per instructions: the '261 specification writes "indium oxide (In₂O₃)" in the description of FIG. 3B but "In₃O₃" in the fabrication description, while claims 4 and 14 recite "In₂O₃" and "In₃O₃" respectively. This affects which dependent claims the O'Brien and Hong Kong PolyU references can reach, so it matters for the § 102 mapping — it is noted, not corrected.
  5. Primary sources: https://patents.google.com/patent/US10254261/en (full text, claims, citation tables) · https://patentimages.storage.googleapis.com/2c/a8/60/d9e767332574b2/US10254261.pdf · https://patents.google.com/patent/US20160018356A1/en · https://patentimages.storage.googleapis.com/22/a0/73/7310c315cbf396/US9810653.pdf · https://patents.google.com/patent/US20050109081A1/en · https://patents.google.com/patent/US20150323510 · https://patentimages.storage.googleapis.com/b6/10/36/b8574cb362e5f2/US20130010826A1.pdf · https://patentimages.storage.googleapis.com/84/db/d7/e73569691add67/[US8387464](/patent/US8387464).pdf

Bottom line: for US 10,254,261, the most relevant cited prior art is Shankar (US 2016/0018356 A1 → US 9,810,653 B2), Zribi (US 2005/0109081 A1 → US 7,104,113 B2), Active-Semi (US 2015/0323510 A1 → US 9,664,661 B2), and Le Neel (US 2013/0010826 A1 → US 9,448,198 B2) — in that order. But the most usable § 102 art is Zribi and Le Neel '826, because Shankar and the same-day ST siblings are almost certainly excepted under § 102(b)(1)(A) / § 102(b)(2)(C) and, in Shankar's case, subsumed into the '261's own specification by express incorporation by reference. No cited reference anticipates claims 1, 8, 12 or 17 outright; the closest any comes is § 103 territory, and the temperature-sensor-between-heater-and-film ordering plus the through-hole limitations remain undisclosed across the entire cited corpus.

Generated 9/29/2026, 4:53:43 AM

Obviousness

Combinations of prior art that suggest the claimed invention would have been obvious under 35 U.S.C. § 103.

✓ Generated

I'll verify a few of the highest-value references before building the obviousness combinations.

That first search was highly probative. Let me verify the Shankar reference the patent itself incorporates, and the through-hole/cavity art.

Two more targeted verifications — the Silicon Labs "integral heater" sibling, and through-hole/opening art for the claim 6/17 limitation.

Obviousness Analysis — U.S. Patent No. 10,254,261 B2

35 U.S.C. § 103

Patent: "Integrated air quality sensor that detects multiple gas species" · App. 15/213,100 · Filed/priority 2016‑07‑18 · Granted 2019‑04‑09
Claim set analyzed: all 19 claims; independent claims 1, 8, 12, 17
Primary source: https://patents.google.com/patent/[US10254261](/patent/US10254261)/en

Date discrepancy flagged (per operating rules): the task header states "Current Date: April 26, 2026," while the session date stamp reads 2026‑09‑29. Nothing in this § 103 analysis turns on which is correct — the critical date (2016‑07‑18) and the availability analysis are fixed — so I proceed without resolving it.


0. Frame, and the single fact that governs the whole analysis

Governing law. The application was filed 2016‑07‑18, after the AIA's 2013‑03‑16 cutover, and claims no pre‑AIA priority (the CN 2017 filings are downstream). AIA § 102/§ 103 therefore apply, with an effective filing date of 2016‑07‑18. Pre‑AIA case law remains persuasive but the § 102 structure is the AIA's.

The governing fact. The most structurally on‑point reference in the entire field — Shankar, US 2016/0018356 A1 / US 9,810,653 B2 (app. 14/334,572, filed 2014‑07‑17, published 2016‑01‑21), which the '261 specification expressly incorporates by reference — describes a stack of gas sensor + resistive heater + resistive temperature sensor over an insulating recess, on a common substrate with an ASIC, i.e., very nearly claim 1. But Shankar's named inventive entity is Ravi Shankar, Olivier Le Neel, Tien‑Choy Loh, Shian‑Yeu Kam — the identical four inventors as the '261 — and it published within one year of the critical date and is commonly owned. It is therefore, on its face, excepted from prior art by AIA § 102(b)(1)(A) (inventors' own disclosure within the grace period) and, as to its US patent document character, by § 102(b)(2)(C) (common ownership). The examiner cited it; it is in the file; but it may not be available as § 102 art at all.

The corollary that shapes every ground below. The § 102(b) exceptions are time‑limited. The same cannot be said for STMicroelectronics' older self‑published family — notably US 2013/0010826 A1 (filed 2011‑07‑05; published 2013‑01‑10; granted as US 9,448,198 B2; inventor Olivier Le Neel, assignee STMicroelectronics Pte Ltd). Because it published more than one year before 2016‑07‑18, the § 102(b)(1) grace period cannot reach it, and § 102(b)(2)(C) common ownership reaches only § 102(a)(2) art — not § 102(a)(1). The '826 is therefore unambiguously § 102(a)(1) prior art even though it shares an inventor and an assignee with the '261. That asymmetry — ST's pre‑2015 publications are fair game; ST's January‑2016 publication is not — is the hinge on which this challenge turns.

§ 102 status of the key references

Reference Pub. date Basis Available against 2016‑07‑18?
US 2013/0010826 A1 (Le Neel, STMicroelectronics — "Microsensor with integrated temperature control"); granted US 9,448,198 B2 2013‑01‑10 § 102(a)(1) YES — >1 yr pre‑critical; grace period inapplicable; common ownership reaches only (a)(2)
US 2014/0291677 A1 (STMicroelectronics, "Integrated multi‑sensor module"; US 9,689,824 B2) 2014‑10‑02 § 102(a)(1) YES — >1 yr pre‑critical
US 2014/0294046 A1 / US 2014/0292317 A1 (STMicroelectronics environmental sensing family) 2014‑10‑02 § 102(a)(1) YES
US 2014/0353773 A1 (STMicroelectronics, suspended membrane) 2014‑12‑04 § 102(a)(1) YES
US 2013/0139587 A1 (STMicroelectronics, tunable humidity sensor w/ integrated heater) 2013‑06‑06 § 102(a)(1) YES
US 2005/0109081 A1 / US 7,104,113 B2 (Zribi et al., GE — "Miniaturized multi‑gas and vapor sensor devices") 2005‑05‑26 / granted 2006‑09‑12 § 102(a)(1) YES
US 9,164,052 B1 (Speer et al., Silicon Laboratories — "Integrated gas sensor") granted 2015‑10‑20 § 102(a)(1) (patented) YES — third‑party; grace period inapplicable
US 8,852,513 B1 (Silicon Labs, packaging; cites sibling "Gas Sensor Having Integral Heater," Ser. 13/250,456) granted 2014‑10‑07 § 102(a)(1) YES
US 2017/0016866 A1 (IBM — reconfigurable MOX gas sensor, SnO₂ ~100 nm, integrated nanoheater) 2017‑01‑19 § 102(a)(2) (effectively filed 2015‑07‑13) YES
US 2017/0336343 A1 (InSyte Systems) 2017‑11‑23 § 102(a)(2) (eff. filed 2016‑05‑19) YES, subject to § 102(b)(2) checks
US 2017/0370865 A1 (O'Brien, ALD nanolaminate gas sensor) 2017‑12‑28 § 102(a)(2) (eff. filed 2014‑12‑15) YES
US 2015/0323510 A1 (Active‑Semi, olfactory controller IC) 2015‑11‑12 § 102(a)(1) YES (third party)
US 6,592,823 B1 (BASF — sensor for a plurality of gas constituents) 2003‑07‑15 § 102(a)(1) YES
CN 1684285 A (microstructure gas sensor array chip) 2005‑10‑19 § 102(a)(1) YES (foreign printed publication)
US 2008/0308920 A1 (Wan — fabricating micro cavities); US 8,062,497 B2 (IMEC — hermetically sealed cavity) 2008‑12‑18 / 2011‑11‑22 § 102(a)(1) YES
Shankar — US 2016/0018356 A1 / US 9,810,653 B2 2016‑01‑21 § 102(a)(1)/(a)(2) LIKELY EXCEPTED — § 102(b)(1)(A) & § 102(b)(2)(C)

Level of ordinary skill (POSA)

A POSA here is a person with a master's degree (or equivalent industrial experience) in electrical engineering, applied physics, or materials science, with 2–3 years of hands‑on experience in CMOS‑compatible MEMS micro‑hotplate/metal‑oxide gas sensors — including thin‑film deposition and patterning at ≤400 °C back‑end temperatures, micro‑heater design (TCR, serpentine geometry), and thermal‑isolation structures. This is corroborated by the '261 specification itself, which assumes familiarity with CVD/PVD/ALD, RIE, spin‑expose‑develop, and CMP as conventional (see Detailed Description; and the earlier-generated Prior Art section, which catalogues this skill level across the cited art).

Claim construction of the three dispositive limitations

Term Construction (Phillips-style, in light of the intrinsic record) Why it matters
"a temperature sensing element between the gas sensitive material and the heating element" (claims 1, 8, 17–18) The thermal-sensing element must lie in the vertical (layer) order film‑over‑thermo‑sensor‑over‑heater, within the sensor stack — not merely "elsewhere on the die." This is the one limitation that separates the '261 from nearly all integrated‑MOX art, which puts the thermometer in the substrate (bandgap) or in the periphery.
"aligned with each other" (claims 1, 17) Vertical co‑location of cavity, film, heater and thermal sensor within the same areal footprint (i.e., a stack, not laterally adjacent components). If construed loosely (mere overlap), the claim collapses onto any hot‑plate; if construed as strict coaxial alignment, it invites a design‑around. This is the claim‑construction battleground.
"a through hole that extends through the gas sensitive material, the heating element, and the temperature sensing element" (claims 6, 12, 17) A literal aperture penetrating all three layers of the stack (an etch/access via), not merely a gap beside the stack. Ubiquitous in sacrificial‑release MEMS; see Ground 5.

Note also that claim 12's through hole runs through "the first heater and the first gas sensitive material" only — it does not require penetration of the temperature sensor. Claim 12 is therefore broader than claim 17 and is the softest independent claim in the set.


1. Which limitation actually carries the case

Independent claim Elements a reference set must supply Where the fight is
1 substrate; single‑IC array of gas‑species sensors; per element: cavity in substrate + gas‑sensitive material + heating element + temperature sensing element between film and heater; all aligned The interposed discrete temperature sensor + alignment
8 semiconductor substrate; micro‑sensor array; per element heater + gas micro‑sensor + temperature sensor between them; microprocessor; memory The interposed sensor (most art puts it in the substrate)
12 form 1st heater; 1st temp sensor on the heater; 1st gas film on the temp sensor; through hole through heater + film; repeat in 2nd region Duplication in a second region + through hole
17 claim 1 elements plus through hole through film + heater + temp sensor Same as claim 1, plus a routine etch via

Everything else — materials (SnO₂/ZnO₂/In₂O₃), thicknesses (<500 nm, <200 nm), TaAl low‑TCR heaters, glass substrates, passivation windows, thermal tuning, air pockets, differing materials per element — is either expressly disclosed in the art or a predictable design choice. The patent's validity therefore rests almost entirely on the words "between" and "aligned with each other."


2. Ground 1 — Claim 1 obvious over US 2013/0010826 A1 (Le Neel/STMicroelectronics) in view of US 2005/0109081 A1 / US 7,104,113 B2 (Zribi et al./GE)

This is the strongest single ground, because every element is disclosed in one reference and the ordering limitation is taught explicitly, in the alternative, by the other.

The '826 reference — what it actually says

Verbatim from US 2013/0010826 A1 (verified against the published text and the granted US 9,448,198 B2):

"…the microsensors described by the present disclosure can be formed as a semiconductor device through a sequence of growing, deposition, patterning, and etching steps. In one embodiment, such a method involves providing a silicon substrate that includes a thermal insulation layer. A thermal energy source layer of a refractory material is formed over the thermal insulation layer. The resulting thermal energy source layer is patterned to form a thermal energy source. A thermal conducting layer is formed over the thermal energy source. After the thermal conducting layer is formed, a working electrode, a counter electrode, and a temperature sensor are formed over the thermal conducting layer. A passivation layer is then formed over the temperature sensor. The passivation layer is patterned to define a sensing region and expose at least a portion of the working electrode and counter electrode."

and, decisively:

"In some embodiments, the thermal energy source is provided below the transducer. In some embodiments, the thermal energy source is also provided below the temperature sensor. In yet other embodiments, both the thermal energy source and the temperature sensor are provided below the transducer."

with the stated purpose:

"The integrated temperature sensor detects the temperature of the sensing region and produces a signal indicative of that temperature. That signal can be used by a control unit to control the thermal energy produced by the thermal energy source. Through this feedback loop, localized heating of the sensing region can be adjusted and controlled… Localized temperature control allows analyte detection to be carried out at the same temperatures or substantially the same temperatures at which the sensor is calibrated."

The '826 is also assignee‑ and inventor‑common with the '261 (STMicroelectronics Pte Ltd; Olivier Le Neel).

Claim chart — claim 1

Claim 1 element '826 (US 2013/0010826 A1) Zribi (US 7,104,113 B2 / US 2005/0109081 A1)
substrate semiconductor substrate 200 (silicon) silicon layer / frame 14
array of gas‑species sensors on a single IC microsensor 100 "formed as part of a semiconductor device"; sequential deposition/patterning/etching; substrate "may include… metal interconnect features, vias, contact pads" (i.e., an IC) sensor device; MEMS arrays; family explicitly "multi‑gas"
cavity in the substrate ✗ (uses a solid thermal insulating layer 202, e.g., thermally grown SiO₂ — not a cavity) ✓ — frame 14 internal surfaces "define at least one cell (18) having at least one opening"; method: "selectively removing a portion of the second thin film layer and selectively removing a portion of the silicon layer to form at least one cell… wherein the cell is substantially aligned with the one or more resistive thin film heater/thermometer devices"
gas sensitive material configured to detect a particular gas species transducer 104 in a sensing region (electrochemical/other; expressly not limited to electrochemical: "the transducer may be an electrical transducer that measures surface or electrolyte conductivity… optical… mass sensitive or heat sensitive") sensing layer 22 "disposed directly or indirectly adjacent to the thin film membrane," for "multi‑gas and vapor" detection (zeolite, polyelectrolyte, SAM, aluminosilicate, carbon nanostructure)
heating element thermal energy source 106 of refractory material (Joule heating, localized) resistive thin film heater/thermometer device(s) 20 on the membrane
temperature sensing element between the film and the heater ✓✓ — temperature sensor 108 is formed over the thermal conducting layer which is over the thermal energy source, i.e., above the heater and below the transducer; and the specification expressly enumerates this ordering ("both the thermal energy source and the temperature sensor are provided below the transducer") ✗ — the "heater/thermometer" is a single combined device 20; there is no discrete thermal sensor interposed between the sensing layer and the heater
all four "aligned with each other" inherent — layers are sequentially deposited and patterned one over the other in the same stack ✓ — express: the cell is "substantially aligned" with the heater/thermometer; the sensing layer sits on the same membrane area

Result: Zribi supplies everything the '826 lacks (the substrate cavity + criterion of alignment + an actual gas/vapor sensing layer), and the '826 supplies the one thing Zribi lacks (a discrete temperature sensor stacked between the sensing layer and the heater). Neither requires physical modification of the other — the combination is a substitution of one known sensor architecture for another in the same stack, using only conventional BEOL/MEMS steps the '261 itself concedes are routine.

Motivation to combine (Ground 1)

  1. Explicit teaching in the primary reference. The '826 does not merely permit the claimed ordering — it lists it as one of a small set of alternatives ("In yet other embodiments, both the thermal energy source and the temperature sensor are provided below the transducer"). Under KSR, a reference that "discloses a finite number of identified, predictable solutions" gives the POSA good reason to pursue that which is claimed. There is no hindsight reconstruction required; the reference itself articulates the claimed geometry.
  2. Articulated problem, articulated solution. The '826 states the very problem the '261 claims to solve: sensing accuracy. Its stated mechanism — "carrying out the sensing near the calibration temperature [and] near their peak reaction rate" — is the identical rationale the '261 gives for integrating a temperature sensor with each gas sensor ("provides a feedback signal to ensure that the SnO₂ material is at the desired temperature"). The '261's own FIG. 5 table (100 °C → H₂; 200 °C → butane/propane; 300 °C → CO; 400 °C → methane) makes temperature fidelity the performance variable. A POSA seeking species selectivity therefore has a strong, stated motivation to put an accurate thermometer exactly where the reaction occurs — between heater and film.
  3. The references are physically combinable and the result predictable. Both are CMOS/BEOL thin‑film, wafer‑scale, sequentially deposited and patterned devices. Substituting an MOX/vapor sensing layer for the '826's transducer is a materials swap within a known process window; moving a resistive thermometer from the Zribi "combined heater/thermometer" to a discrete interposed element is a de minimis layout change with no change in principle of operation. Predictable result: better temperature control → better selectivity and accuracy. KSR: "the combination of familiar elements according to known methods is likely to be obvious when it does no more than yield predictable results."
  4. Same field, same problem, overlapping disclosures. The '826 is STMicroelectronics' own integrated-chemical-microsensor platform; Zribi is a GE MEMS multi‑gas platform; both are directed to miniaturized, thermally isolated, thin‑film sensing with dedicated heaters. KSR "familiar elements" and "same field of endeavor."
  5. Design incentive: thermal isolation and low power. Zribi's stated objective — "faster response time… lower power consumption, and less crosstalk between unit sensor devices" — is the same objective the '261 recites ("ensure that the heat is confined to the local region… and is not transmitted to other VOC sensors"). A POSA building a multi‑element array is directly led to Zribi's cell/cavity per element.

Weakness of Ground 1. The '826's transducer is described in its working examples as an electrochemical transducer (working/counter electrodes). A patentee will argue that an electrochemical cell operates at ambient temperature and in a liquid/electrolyte medium, so combining its thermal architecture with a 200–500 °C MOX chemoresistor is improper. Rebuttal: the '826's own text disclaims any such limitation ("the reference to an electrochemical transducer and its electrodes is for illustrative purposes only and is not to be construed as limiting"; "the transducer may be an electrical transducer that measures surface or electrolyte conductivity"), and its stated mechanism is explicitly reaction-rate temperature control — i.e., it contemplates thermally driven surface chemistry. The argument is available but weak.


3. Ground 2 — Claim 1 (alternative) over Shankar US 2016/0018356 A1 — and the § 102(b) trap

For completeness and candor: if Shankar is available, claim 1 falls.

Claim 1 element Shankar US 2016/0018356 A1 / US 9,810,653 B2
substrate + array on one IC "The solid state gas sensor module can be integrated on top of an ASIC on a common substrate"; FIG. 11 = "a top plan view of a circuit layout for a sensor array in which array elements are solid state gas sensor modules"
cavity in the substrate "stacked over an insulating recess"; "Among the pillars… the recess is over-filled with a bulk polyimide 182"; "formation of the thermal insulation structure 150 is begun by first forming a recess in the substrate 148"
gas sensitive material SMO gas sensor 144 (SnO₂; methane/CO/H₂/LPG sensitivity)
heating element thin film resistive heater 140 (870 nm TaAl M1 + 500 nm AlCu M2)
temperature sensor between film and heater "A miniature resistive SMO gas sensor module… includes an SMO gas sensor, a resistive heater, and a resistive temperature sensor integrated with an ASIC. The gas sensor, heater, and temperature sensor are stacked adjacent to an insulating cavity… The resistive heater is located next to the SMO gas sensor to conserve battery power. The resistive temperature sensor is placed in close proximity to the SMO gas sensor"; fabrication order at 176 (heater, TaAl) → 178 (temperature sensor, 200 nm CrSi) → 144 (SMO sensor) ⇒ heater → thermometer → SMO film
aligned inherently stacked; the recess/cell is formed beneath and registered to the heater

Shankar additionally supplies: glass substrate ("the substrate 148, which is made of glass in the embodiment described herein" — claim 9), polyimide pillars + cavity (claim 15), ≤400 °C process flow (claims 12), thermal tuning of a multi‑sensor array to monitor different gas species (claim 10), and TaAl heaters (claim 13).

The trap, stated plainly

Shankar is very likely not prior art. Its inventors are the same four people (Shankar, Le Neel, Loh, Kam) as the '261; it published 2016‑01‑21, i.e., within one year of 2016‑07‑18. Under § 102(b)(1)(A), a disclosure made ≤1 year before the effective filing date by the inventor or a joint inventor is not prior art. Under § 102(b)(2)(C), commonly owned subject matter is excepted from § 102(a)(2) art. And the '261 specification does not merely cite Shankar — it incorporates it by reference in its entirety and states the micro‑sensor array "may be implemented as described in [Shankar]." Incorporation by reference makes Shankar's disclosure part of the '261's own specification for § 112 purposes; it does not convert it into § 102 prior art.

Practical consequence. Shankar is best used not as the § 102 reference but as (a) evidence of the level of ordinary skill and of what was conventional, and (b) an admission in the patentee's own specification that a gas sensor + heater + temperature sensor stacked over an insulating cavity on an ASIC substrate was known technology. That admission matters: it undercuts any argument that the claimed architecture was inventive over the art. A challenger should lead with Ground 1 (which rests on unambiguously available art) and use Shankar only as corroboration.


4. Ground 3 — Claim 8 (and 9, 10, 11) obvious over US 9,164,052 B1 (Speer et al./Silicon Laboratories) in view of US 2013/0010826 A1

Claim 8 is the system claim (substrate + array + heater per element + gas micro‑sensor per element + temperature sensor between them + microprocessor + memory). Claim 8's weakest link is not the processor/memory — it is the interposed temperature sensor.

Claim 8 element US 9,164,052 B1 (Silicon Labs) '826
semiconductor substrate + micro‑sensor array "integrated circuit 100 may be a mixed signal system on a chip circuit"; gas sensor 142 and humidity sensor 140 formed in a redistribution layer (RDL) above the integrated circuit; "Other embodiments may include multiple gas sensors with specific materials and configurations selective to particular gases" semiconductor substrate 200 with microsensor 100
respective heater per element "the gas sensor 142 may be a four terminal device which includes a heater element" (RGAS1, RGAS2, RHEAT1, RHEAT2); sibling Ser. 13/250,456 is titled "Gas Sensor Having Integral Heater" thermal energy source 106
respective gas micro‑sensor gas sensitive layer 214 in a window in the second RDL insulative layer 212 (polyimide/PBO) transducer 104
temperature sensor between heater and gas micro‑sensor ✗ — temperature sensor 127 is a "silicon bandgap temperature sensor" in the IC's analog peripherals 126, i.e., in the substrate, not in the stack ✓ — temperature sensor 108 deposited above the thermal conducting layer over the thermal energy source, below the transducer
microprocessor processor 102 ("8051 compatible microcontroller") —
memory storing instructions "Associated memory elements 104 may also be provided" —

Motivation to combine. (i) The '052's own processor uses the temperature sensor's data to compute gas concentration — "the processor utiliz[es] the detected electrical characteristics of the gas sensitive material… and data from the temperature sensor to determine a gas concentration." A POSA is thus explicitly directed to the temperature‑sensing function as a gas‑concentration input, not a housekeeping parameter; improving its fidelity and its locality is the obvious next step. (ii) The '052's thermometer is a substrate bandgap device measuring die temperature, not the temperature of the heated MOX film — a POSA would recognize that a film‑adjacent thermometer is what the feedback loop needs. (iii) The '826 teaches precisely a deposited thin‑film thermometer placed in the stack between heater and sensing region, with the explicit rationale of matching calibration temperature. (iv) Both are integrated gas‑sensor platforms reading on the same problem ("improved gas sensing accuracy and consistency," per the '052's own Background). (v) Predictable result: tighter temperature control → better selectivity (the '261's FIG. 5).

Claim 9 (glass substrate): Shankar's express glass substrate; also generic in the art and conceded in the '261's own text ("a silicon substrate or a glass substrate").
Claim 10 (temperature‑tunable elements): Shankar's operating method ("thermally tuning the sensors to monitor different gas species"); IBM US 2017/0016866 A1 (MOX sensors at different temperatures for differential measurement); the '261's own FIG. 5 table.
Claim 11 (temperature sensor coupled to the microprocessor): the '826's "control unit" feedback loop; the '052's processor consuming temperature‑sensor data.


5. Ground 4 — Claim 12 (and 13–16) obvious over US 2013/0010826 A1 in view of Zribi and the multi‑gas‑array art

Claim 12 is the broadest independent claim in the patent (its through hole need not penetrate the temperature sensor), and it is method‑only. Its steps map almost one‑for‑one onto the '826's disclosed process flow:

Claim 12 step '826 disclosure
forming a first heater in a first region of an IC chip "A thermal energy source layer of a refractory material is formed over the thermal insulation layer. The resulting thermal energy source layer is patterned to form a thermal energy source"
forming a first temperature sensor on the heater "A thermal conducting layer is formed over the thermal energy source. After the thermal conducting layer is formed, a working electrode, a counter electrode, and a temperature sensor are formed over the thermal conducting layer" (⇒ the thermal sensor is formed above the thermal energy source)
forming a first gas sensitive material on the temperature sensor the patterned passivation "define[s] a sensing region" in/over which the transducer sits — i.e., the sensing layer is formed above the thermometer
forming a through hole through the first heater and the gas sensitive material Zribi's method: "selectively removing a portion of the second thin film layer and selectively removing a portion of the silicon layer to form at least one cell… substantially aligned with the heater/thermometer"; plus the generic etch‑hole/sacrificial‑release art (US 2008/0308920 A1 (Wan), System and method of fabricating micro cavities; US 8,062,497 B2 (IMEC), Method for forming a hermetically sealed cavity)
forming a second heater / second temperature sensor / second gas sensitive material in a second region Duplication in a second region is taught or rendered obvious by: CN 1684285 A (microstructure gas sensor array chip); US 6,592,823 B1 (BASF — sensor for "a plurality of gas constituents"); Zribi (multi‑gas devices, arrayed unit sensor cells with "less crosstalk between unit sensor devices"); the '052 ("multiple gas sensors with specific materials and configurations selective to particular gases"); Shankar's FIG. 11 array and its operating method

Motivation (Ground 4). Two rationales dominate. First, the physical impossibility of species selectivity with one MOX film is common knowledge in the art and is expressly stated in the references — Shankar ("the SMO sensors may have difficulty distinguishing between two gases"); the '261's own FIG. 5 (one material, four different gases at four different temperatures). Reproducing a known unit sensor in a second region of the same die is the paradigmatic KSR "duplication of parts" / "arrangement of elements" case, particularly where, as here, the references expressly contemplate arrays. Second, process economy: the '261's own stated benefit ("a single process flow can be used to fabricate different types of VOC sensors") is delivered by the ordinary practice of masking one sensor region while patterning another — exactly the masking sequence the '261 describes and which Zribi's sacrificial‑layer method already contemplates.

Dependent claims:

  • Claim 13 (TaAl low‑TCR heater): Shankar's 870 nm TaAl heater layer; the '261's own text ("TaAl… features a low thermal coefficient (TCR) that results in a stable resistance"); US 2014/0291677 A1 (STMicroelectronics, integrated multi‑sensor module) discloses a low‑TCR refractory‑metal heater common plate.
  • Claim 14 (ZnO₂ / In₃O₃ / SnO₂): see § 8 below — and note the literal‑identifier defect: claim 14 recites "In₃O₃" while claim 4 recites "In₂O₃" and the specification writes both "indium oxide (In₂O₃)" and "In₃O₃." Because the challenge is § 103, not § 112, the practical effect is that a POSA reading claim 14 would understand "In₃O₃" to mean the indium oxide already disclosed for the third VOC sensor — so the usual § 103 reasoning applies.
  • Claim 15 (first/second air pockets, film spaced from the pocket by the heater): Zribi's cell 18 with the heating element on the membrane above it; Shankar's polyimide‑filled recess (with the pillars supporting the stack) becoming an air volume upon polyimide removal; IMEC US 8,062,497 B2 (sealed cavity).
  • Claim 16 (first and second gas sensitive materials are different materials): Zribi's multi‑gas/multi‑vapor sensor devices with different sensing chemistries; the '052's "multiple gas sensors with specific materials… selective to particular gases"; the '261's FIG. 5 (SnO₂/ZnO₂/InO₂ at different temperatures ⇒ different materials).

6. Ground 5 — Claim 17 (and 6, 18, 19) obvious over Ground 1 plus through‑hole art

Claim 17 = claim 1 + a through hole penetrating the film, the heater, and the temperature sensor. Claim 18 = claim 17 with the sensor between film and heater. Claim 19 = passivation with openings over the film.

Through‑hole. Etching an access aperture through a deposited thin‑film stack to reach and remove a sacrificial layer beneath it is a bedrock MEMS technique, taught in the same art:

  • Zribi: "selectively removing a portion of the second thin film layer and selectively removing a portion of the silicon layer to form at least one cell"; the frame defines a cell "having at least one opening."
  • Shankar: openings etched through the SiN layer to the polyimide (bulk polyimide 182) so that the sacrificial material can be removed / the cavity formed behind the pillars.
  • US 2008/0308920 A1 (Wan): micro‑cavity fabrication by sacrificial removal through etch access.
  • US 8,062,497 B2 (IMEC): access apertures for forming a hermetically sealed cavity.
  • The '261 specification itself: "Openings 256 are formed by etching through the VOC sensor layers and ILD layers to expose the polyimide wells 226."

And the result is predictable and stated: thermal isolation. Zribi: "The resulting thermal isolation provides faster response time, greater mechanical strength, lower power consumption, and less crosstalk." Shankar: heat confinement lowered measured power "from 900 mW to less than about 5 mW." The '261's own air pocket rationale is identical. A POSA seeking the '261's stated goal would route the release etch through the stack as a matter of course.

Claim 19 / claim 7 (passivation with openings over the gas sensitive material). Directly met by the '826: "A passivation layer is then formed over the temperature sensor. The passivation layer is patterned to define a sensing region and expose at least a portion of the working electrode and counter electrode." Also met by the '052: "windows may be formed in the second RDL insulative layer 212 to provide the location for a gas sensitive layer 214." The '261's own spec does the same ("The passivation layer 254 is patterned to expose the VOC sensors"). This limitation is, for practical purposes, unavoidable in any integrated MOX sensor and adds nothing.

Claim 18 is simply claim 1's ordering, already addressed in Ground 1.


7. Motivation to combine — consolidated KSR rationales

# Rationale (KSR category) Best evidence Strength
1 Explicit, enumerated alternative in the primary reference — the claimed vertical ordering is one of three orderings the '826 lists '826: "In some embodiments, the thermal energy source is provided below the transducer… both the thermal energy source and the temperature sensor are provided below the transducer" ★★★★★ (defeats hindsight)
2 Predictable improvement of a known function — a film‑adjacent thermometer yields better temperature fidelity, and temperature fidelity is the species‑selectivity variable '826 (sense near calibration temperature / peak reaction rate); the '261's own FIG. 5 (100/200/300/400 °C → H₂/butane+propane/CO/methane); '052 (processor uses temperature data to compute gas concentration) ★★★★★
3 Problem expressly named in the prior art, same solution claimed '826 problem statement; '052 Background ("improved gas sensing accuracy and consistency"); Zribi ("less crosstalk… lower power consumption") vs. the '261's stated aims ★★★★☆
4 Duplication of parts / arrangement of elements to make an array — one MOX film cannot distinguish species; arrays of tuned elements are the standard answer Shankar ("SMO sensors may have difficulty distinguishing between two gases"; FIG. 11 array; thermal tuning); BASF US 6,592,823 B1 ("plurality of gas constituents"); CN 1684285 A (sensor array chip); '052 ("multiple gas sensors with specific materials") ★★★★★
5 Known technique, within the ordinary skill — sequential deposition/patterning/etching of conductor/insulator/semiconductor layers at ≤400 °C; etch‑hole release; serpentine heaters the '261's own specification concedes all of this as "conventional" (CVD/PVD/ALD, RIE, CMP, photolithography); Zribi's and Shankar's process flows; Wan US 2008/0308920 A1; IMEC US 8,062,497 B2 ★★★★★
6 Market/design pressure for wearable, low‑power CO₂/VOC monitors — a legitimate design incentive, not hindsight the '261's own Background (bulky, hundreds of dollars); Shankar (900 mW → <5 mW via heat confinement; "low‑power component of mobile electronic devices such as smart phones"); '052 (system‑on‑a‑chip gas sensing MCU) ★★★☆☆ (supports, does not carry)
7 All elements are individually in the art; the combination changes nothing in the principle of operation '826 + Zribi + '052 + IBM '866 + Shankar, each element separately ★★★★☆

8. Dependent claims — accelerated analysis

Claim Limitation Where disclosed Obviousness posture
2 reactive layer of a metal‑oxide‑semiconductor structure, <500 nm IBM US 2017/0016866 A1 (SnO₂ ~100 nm over an integrated nanoheater); Shankar (SMO thin film); Zribi claim 44 (sensing layer 1 nm–5 µm, overlapping); the '261 spec (30–100 nm) Obvious design choice / results‑effective variable optimization with no criticality shown
3 gas sensitive material is a ceramic Applicant's own admission: "The resulting thin film 142 is so dense that it is classified as a ceramic as opposed to a powder"; Speer '052 ("porous metal oxides") Anticipated by the patentee's admission; § 103 a fortiori
4 ceramic includes one or more of SnO₂, ZnO₂, In₂O₃ SnO₂: Shankar, '052, IBM '866. ZnO₂/In₂O₃: the '261's own FIG. 5 (applicant admission) and HK PolyU US 2013/0202489 A1 (MOX nanoclusters) Obvious — the specification supplies the genus and the species
5 <200 nm as claim 2 Obvious
6 through hole through film + heater + temperature sensor Ground 5 Obvious
7 passivation layer with openings over the gas sensitive material '826 patterned passivation ("define a sensing region"); '052 windows in RDL insulative layer; the '261 spec itself Obvious
9 substrate is glass Shankar ("the substrate 148… is made of glass in the embodiment described herein"); the '261 spec ("a silicon substrate or a glass substrate") Obvious
10 gas micro‑sensors temperature‑tunable to different temperatures Shankar operating method; IBM '866; the '261's FIG. 5 Obvious
11 temperature sensor coupled to the microprocessor '826 control‑unit feedback loop; '052 processor consuming temperature data Obvious
13 TaAl low‑TCR heating element Shankar (870 nm TaAl heater layer); '261 spec; US 2014/0291677 A1 (ST, refractory‑metal low‑TCR heater) Obvious
14 ZnO₂ / In₃O₃ / SnO₂ as claim 4 Obvious (note the In₃O₃/In₂O₃ literal mismatch flagged in the earlier claim summary and § 5 above)
15 first and second air pockets, film spaced from pocket by the heater Zribi cell 18 with heater on the membrane above it; Shankar insulating recess; IMEC US 8,062,497 B2 Obvious
16 first and second gas sensitive materials are different Zribi multi‑gas/multi‑vapor; '052 "specific materials… selective to particular gases"; the '261's FIG. 5 Obvious
18 temperature sensing element between film and heater Ground 1 Obvious
19 passivation with openings as claim 7 Obvious

9. Where the patent pushes back — the credible counterarguments

For an honest assessment, the patentee's best defenses, and their weight:

  1. "No reference teaches the combination." The strongest defense. Claim 1's four‑element stack with the thermal sensor interposed and aligned is not disclosed in any single available reference (Shankar is the only one, and it is likely § 102(b)‑excepted). The patentee will argue that the examiner considered all of this art and allowed the claims anyway — a weak argument (the examiner's allowance is not evidence of non‑obviousness), but it explains why the ground must be a two‑reference combination, which is always attackable as hindsight.
  2. The '826's transducer is electrochemical, not MOX. An argument that combining the '826's thermal architecture with a 200–500 °C chemoresistor changes the principle of operation. Weight: low–moderate. The '826 disclaims the electrochemical limitation for illustrative purposes and expressly contemplates conductivity, optical, mass‑ and heat‑sensitive transducers; its stated rationale is reaction‑rate temperature control.
  3. The '826 isolates thermally by a solid insulating layer, not a cavity. A "teaching away" argument from air‑cavity isolation. Weight: low. Zribi, Shankar, Wan, and IMEC all teach cavity/cell isolation, and the '826's solid layer is a design choice, not a denigration of cavities.
  4. The '261 claims "aligned with each other" — a word absent from the '826. Weight: low–moderate, and construction‑dependent. Zribi uses "substantially aligned"; the '826's stack is inherently vertically aligned because layers are deposited one atop another. But if the patentee can persuade a tribunal that "aligned" requires strict coaxial registration (e.g., concentrically registered cavity/heater/thermometer/film), the combination weakens and the claim narrows sharply — a narrowing that likely costs infringement coverage.
  5. § 102(b) safe harbor for Shankar. Disqualifying the best reference. Weight: high as a threshold matter — a challenger must build the case without Shankar as § 102 art. Ground 1 does that.
  6. § 112 problems are not § 103 defenses. The In₃O₃/In₂O₃ and "ZnO₂" inconsistencies, and the claim/specification mismatch over CO₂ and humidity, are not invalidity arguments in an IPR (no indefiniteness ground). They do, however, undercut any argument that these claims represent a carefully scoped, non‑obvious advance, and they surface in a district‑court § 112 defense.

Net: Ground 1 is a strong but not overwhelming prima facie case on claim 1. The § 102(b) refuge for Shankar is the single largest vulnerability in the challenge, and the "aligned" limitation is the single largest claim‑construction risk.


10. Secondary considerations

There is essentially nothing to weigh on the patentee's side, on the present record.

  • No commercial success evidence with nexus. The earlier-generated sections found no commercial ST part number and no datasheet for a MOX multi‑gas sensor built to these claims; ST's own air‑quality application material instead points to third‑party (Sensirion) VOC/CO₂ sensors. Without a covered product, there is no basis for a commercial‑success argument, and even a covered product would require a nexus to the claimed ordering/alignment, not to the '261's overall sensor functionality.
  • No licensing, copying, or industry‑acclaim evidence — and no litigation to have surfaced any. The earlier litigation and PTAB sections found no assertion, no IPR/PGR/CBM, no CAFC activity, and no § 315(e)(2) estoppel on this patent.
  • No unexpected results or long‑felt need supported by comparative data. The '261 contains no comparative testing against a non‑interposed‑thermometer device; its performance benefits (power confinement, accuracy) trace to the incorporated Shankar disclosure, not to the claimed "between"/"aligned" geometry.
  • The strongest available objective evidence runs against the patent: the asserted benefit — a thin film "about 100 times thinner than the bulk sensor material" enabling integration — is squarely a known MOX miniaturization story already told by Zribi, Shankar, IBM, and Speer.

If the patentee later develops secondary‑consideration evidence tied to a shipping part, the strongest counter would be simultaneous invention / industry convergence — the very number of independent actors (GE, Silicon Labs, IBM, ams, InSyte, plus ST itself) arriving at integrated MOX sensors with stacked heaters and thermometers in 2011–2016.


11. Bottom line — ranked vulnerability

Rank Claim(s) Strongest ground Assessment
1 (weakest/most obvious) 12 '826 process flow (heater → thermal conducting layer → temperature sensor → patterned passivation/sensing region) + multi‑gas‑array art (BASF '823, CN 1684285 A, Zribi, Shankar's method) + through‑hole/release‑etch art (Wan '920, IMEC '497) Highly vulnerable. Method claim; broadest through‑hole language (does not require penetration of the temperature sensor); every step is a conventional BEAM/BEOL sequence the patent itself calls routine
2 17, 6, 18 Ground 1 + through‑hole art Highly vulnerable — adds only a release‑etch via to claim 1's stack
3 1 '826 + Zribi (Ground 1) Vulnerable, but contested — the prima facie case is complete and the '826 explicitly enumerates the claimed ordering; the fight is over "aligned" and over the electrochemical‑transducer distinction
4 8, 9, 10, 11 Speer '052 + '826 (Ground 3) Vulnerable — processor + memory + gas sensor with integral heater + temp‑sensor‑consumed data are all in the '052; relocating the thermometer into the stack is what the '826 teaches
5 2–5, 7, 13–16, 19 § 8 table Vulnerable, mostly as design choices or applicant admissions (FIG. 5; "classified as a ceramic"; "silicon or glass substrate")
Least vulnerable — — Nothing is protected by a strong record: no claim has been confirmed, construed, or tested. Confidence in the validity of these claims is low; confidence in an institution‑worthy IPR petition is moderate‑to‑high on claims 12 and 17, moderate on claim 1, moderate on claim 8.

Confidence rating on the overall § 103 conclusion: Moderate‑to‑high on claims 12/17/6/18; moderate on claims 1/8; moderate on the dependent claims. The limiting factors are (i) the § 102(b) safe harbor that likely removes Shankar, the only single reference that maps the full stack, forcing a two‑reference combination; and (ii) the unresolved construction of "aligned with each other."

What would change my mind about claim 1: (a) a construction of "aligned with each other" requiring strict coaxial registration of all four elements (which the '826's sequentially deposited stack and Zribi's "substantially aligned" cell would not literally meet); (b) a persuasive showing that a POSA could not have substituted a 200–500 °C MOX chemoresistor into the '826's architecture without undue experimentation (unlikely — process temperatures ≤400 °C are the patent's own concession of the state of the art); or (c) objective evidence of unexpected results with nexus to the specific interposed‑thermometer geometry (none of record).


12. Caveats and verification gaps

  1. Shankar's § 102 status is a legal conclusion I cannot certify. The exception analysis turns on the identity of the inventive entities and the ownership dates. I verified the inventor lists (identical four names on both) and common assignment to STMicroelectronics Pte Ltd, and the publication date (2016‑01‑21). Before relying on a Shankar‑based ground, confirm the § 102(b)(1)/(b)(2) analysis against the USPTO's assignment records and the AIA grace‑period guidance.
  2. Full claim text not retrieved for US 9,105,479 B2 / EP 2 645 091 B1 (ams), US 2017/0336343 A1 (InSyte), US 2016/0290946 A1 (Lfoundry), CN 1684285 A, and several 2012–2014 STMicroelectronics applications. Their § 102/§ 103 weight is stated at a candidate level only.
  3. The '826's application number/date. The granted counterpart I verified is US 9,448,198 B2, filed 2011‑07‑05, granted 2016‑09‑20; the publication US 2013/0010826 A1 (2013‑01‑10) is the operative § 102(a)(1) event. The grant itself postdates the critical date and is not the § 102(a)(1) event — the publication is.
  4. Zribi filing‑date discrepancy. Google Patents/Justia show a 2003‑11‑21 filing; one aggregator record shows "18 November 2004" (likely a division/continuation). Either date predates 2016‑07‑18 by more than a decade, so the discrepancy is immaterial to availability.
  5. No post‑grant record to leverage. Consistent with the earlier PTAB/litigation sections: no IPR/PGR/CBM, no FWD, no estoppel, no claim cancellation, no certified construction. This is a clean‑slate, never‑tested operating‑company patent — which cuts both ways: no adverse findings to cite, and no roadmap to inherit.
  6. This is a § 103 analysis, not a legal opinion, and not an invalidity or FTO conclusion. It is intended to identify and rank grounds and the motivations that support them; a petition or invalidity contention would require full‑text review of every reference relied on, a claim‑construction position on "aligned with each other," and confirmation of each reference's § 102(b) status.

Authoritative source for the patent: https://patents.google.com/patent/US10254261/en
Key references verified in this session: https://patents.google.com/patent/US20130010826A1 · https://patentimages.storage.googleapis.com/b6/10/36/b8574cb362e5f2/US20130010826A1.pdf · https://patentimages.storage.googleapis.com/f8/9f/cd/5759aeb606141b/US9448198.pdf · https://patents.google.com/patent/US20050109081A1/en · https://patentimages.storage.googleapis.com/87/fe/3e/723383eeb70c1d/US7104113.pdf · https://patents.google.com/patent/US9164052 · https://patentimages.storage.googleapis.com/34/d9/68/8690bbff039c1f/US9164052.pdf · https://patentimages.storage.googleapis.com/22/a0/73/7310c315cbf396/US9810653.pdf · https://www.patents-review.com/a/20160018356-integrated-smo-gas-sensor-module.html · https://patentimages.storage.googleapis.com/cd/5e/58/bf06d6fa1f6ca8/US8852513.pdf

Generated 9/29/2026, 4:54:34 AM

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