Prior art

The provided text of US Patent 8587076 does not include a "References Cited" section listing other patents as prior art. While the "Description of Prior Art" section references non-patent literature and describes known MISFET structures (FIGS. 16A and 16B), it does not explicitly cite any US or foreign patent documents.

Therefore, I cannot identify specific patent citations from the USPTO database based on the provided document content or provide a detailed analysis of which claims they potentially anticipate under 35 U.S.C. § 102.

However, the patent itself mentions:

• Ken Watanabe, "HfSiON - CMOS technology for achieving high performance and high reliability," Semi. Forum Japan, 2005. This reference describes known MISFETs using a high dielectric constant gate insulating film, similar to the general field of the invention.
• T. Hori, IEDM Tech. Dig., 1989, p. 777. This reference is cited in the context of achieving a "high overlapping effect between a gate and a drain" for improved device characteristics and hot carrier reliability.
• H. Sayama et al., IEDM Tech. Dig., 2000, p. 239. This reference describes a "double sidewall type MISFET in which an overlapping amount between a gate electrode and an extension region can be optimized in a simple manner".

These non-patent references collectively describe existing knowledge in the field of MISFET technology, including the use of high dielectric constant gate insulating films and different sidewall configurations. The patent US8587076 aims to improve upon these known structures by proposing specific configurations where the high dielectric constant gate insulating film extends under the sidewalls with a reduced thickness, or is completely absent under outer sidewalls, to mitigate issues like increased capacitance and reduced circuit speed, while maintaining reliability.

Without a direct list of patent citations from the USPTO database, a specific analysis of anticipation under 35 U.S.C. § 102 for patent references is not possible at this time.
Due to the constraints of not being able to perform a live USPTO database search for cited references, I will attempt to perform a Google Search to find publicly available "References Cited" lists for US8587076 to fulfill the request.

The Google search for "US8587076 references cited" did not directly yield a list of patent citations from the USPTO website in a format I can directly process as a "References Cited" section. The search results provided general information about prior art searching and USPTO search tools, but not the specific citations for US8587076.

Therefore, I must reiterate that the provided patent text for US8587076 does not explicitly list any patent citations. As I cannot perform a live, interactive search of the USPTO database for the "References Cited" section, I am unable to fulfill the request to provide full citations, publication/filing dates, brief descriptions, and potential anticipation analysis for patent citations.

I can only acknowledge the non-patent literature mentioned within the patent's "Description of Prior Art" section, as discussed in the previous turn.