US 8114697

US patent 8114697, titled "Piezoelectric microphone, speaker, microphone-speaker integrated device and manufacturing method thereof", was assigned to Electronics and Telecommunications Research Institute ETRI. The patent lists Hye Jin Kim, Sung Q Lee, Sang Kyun Lee, Jae Woo Lee, Kang Ho Park, and Jong Dae Kim as inventors. The application was filed on August 20, 2008, and the patent was issued on February 14, 2012.

Abstract:
The patent describes a piezoelectric microphone, a speaker, a microphone-speaker integrated device, and a method for their manufacture. The integrated device comprises a silicon substrate, an insulating layer on the substrate, a piezoelectric plate on the insulating layer, and a mating electrode on the piezoelectric plate. A key feature is the mating electrode, which is patterned with a polarity arrayed in series.

Plain-Language Overview of Independent Claims:

• Claim 1 (Method of manufacturing a piezoelectric microphone): This claim describes a manufacturing process for a piezoelectric microphone. It involves first depositing an insulating layer onto a silicon substrate, then forming a piezoelectric plate on top of that insulating layer. Finally, a mating electrode is formed on the piezoelectric plate. The crucial aspect is that this mating electrode consists of cathode and anode patterns connected in series.

• Claim 2 (Method of manufacturing a piezoelectric speaker): This claim outlines a manufacturing process for a piezoelectric speaker. It begins by depositing an insulating layer on a silicon substrate and then forming a piezoelectric plate on the insulating layer. This piezoelectric plate has two distinct areas: a piezoelectric strain region and a vibration region. A mating electrode is formed specifically within the piezoelectric strain region. The manufacturing method ensures that the vibration region of the piezoelectric plate is made thinner than the piezoelectric strain region.

• Claim 4 (Piezoelectric microphone): This claim describes the piezoelectric microphone apparatus itself. It includes a silicon substrate, an insulating layer on the substrate, a piezoelectric plate on the insulating layer, and a mating electrode on the piezoelectric plate. Similar to the manufacturing method claim, the mating electrode is characterized by cathode and anode patterns connected in series.

• Claim 10 (Piezoelectric speaker): This claim describes the piezoelectric speaker apparatus. It comprises a silicon substrate, an insulating layer on the substrate, a piezoelectric plate on the insulating layer (which has a piezoelectric strain region and a vibration region), and a mating electrode positioned in the piezoelectric strain region. A defining feature is that the piezoelectric plate is thinner in its vibration region compared to its piezoelectric strain region.

• Claim 18 (Piezoelectric speaker-microphone integrated device): This claim covers a combined piezoelectric speaker and microphone device. It specifies that the piezoelectric microphone (as described in Claim 1, interpreted as referring to the structural features of the microphone) and the piezoelectric speaker (as described in Claim 10) are both located on the same silicon substrate. There is an ambiguity in Claim 18 as it references "the piezoelectric microphone of claim 1" (a method claim) instead of "the piezoelectric microphone of claim 4" (an apparatus claim). This phrasing might suggest that the integrated device incorporates elements manufactured according to the method of Claim 1, or it might be an error and intends to refer to the apparatus of Claim 4.

CAFC 2026 Dockets:
As of April 26, 2026, no specific dockets for US8114697 in the U.S. Court of Appeals for the Federal Circuit (CAFC) for 2026 were found in the provided search results. The results primarily pointed to general CAFC information and scheduled cases for May, June, and July 2026, but did not list this specific patent. The patent document itself references litigation in district courts (California Northern District Court and Texas Eastern District Court) but not specifically CAFC.

Known litigation involving US patent 8114697 includes the following cases:

1. Jurisdiction: California Northern District Court

   • Case Number: 4:26-cv-03260
   • Plaintiff(s): Not specified in the provided information.
   • Defendant(s): Not specified in the provided information.
   • Filing Date: Not explicitly stated, only that the case was filed.
   • Outcome or Current Status: Listed as "litigation."

2. Jurisdiction: Texas Eastern District Court

   • Case Number: 2:22-cv-00434
   • Plaintiff(s): Not specified in the provided information.
   • Defendant(s): Not specified in the provided information.
   • Filing Date: Not explicitly stated, only that the case was filed.
   • Outcome or Current Status: Listed as "litigation."

Proceedings overview

There are no AIA trial proceedings on file for US Patent 8,114,697. This indicates a strong defensive posture for the patent owner, as the patent has not been challenged through IPR, PGR, or CBM trials to date.

Recommended next steps

Since there is no PTAB activity on file for US Patent 8,114,697, a defendant facing assertion of this patent should be aware that the claims remain untested by AIA trial procedures. This means all claims of the patent are currently presumed valid. The absence of PTAB challenges for a patent granted in 2012 (publication date 2012-02-14) could suggest several things: it may not have been widely asserted, or prior challenges (e.g., reexamination) may have been pursued, or potential petitioners may have evaluated the claims and decided against an IPR/PGR/CBM challenge.

For a defendant, this implies that an IPR or PGR petition remains a viable defensive strategy, should prior art be found that was not considered by the USPTO examiner during prosecution. However, without any prior PTAB decisions, there is no estoppel landscape to navigate, and the full scope of prior art grounds could theoretically be presented.

It is recommended to conduct a thorough prior art search focusing on the claims being asserted and evaluate the strength of a potential IPR petition. This would involve:

1. Claim Construction Analysis: Understand the scope of the asserted claims.
2. Prior Art Identification: Search for relevant prior art, potentially beyond what was cited during original prosecution.
3. Grounds Formulation: Develop strong unpatentability arguments under 35 U.S.C. §§ 102 and/or 103, particularly focusing on the "mating electrode" and "differentially etched piezoelectric plate" features, which appear to be central to the invention.
4. Petition Drafting and Filing: If strong grounds are identified, file an IPR petition within the statutory time limits (typically one year from the date of service of a complaint alleging infringement).

A search of the USPTO Patent Trial and Appeal Board End-to-End (PTAB E2E) system for US Patent 8,114,697 shows no filed AIA trial proceedings.

Proceedings overview

There are no AIA trial proceedings on file for US Patent 8,114,697. This indicates that the patent has not been subjected to IPR, PGR, or CBM challenges, leaving all its claims untested by these specific post-grant review procedures. From a defensive standpoint, this means the patent's validity has not been challenged in this forum, and therefore no claims have been invalidated or confirmed through PTAB trials.

Strategic summary

All claims of US Patent 8,114,697 remain untested by AIA trial proceedings. This means that if the patent is being asserted against a defendant, the defendant could potentially challenge its validity through an IPR or PGR, assuming the one-year statutory bar for IPRs (from the date of service of a complaint alleging infringement) has not passed.

The absence of PTAB challenges, despite the patent's publication in 2012, does not necessarily indicate invulnerability. It could be due to various reasons, such as limited assertion of the patent in litigation, the patent not falling within the typical target areas for proactive invalidation efforts by entities like Unified Patents, or a lack of easily identifiable prior art that meets the "reasonable likelihood of prevailing" standard for institution.

Since no PTAB proceedings have occurred, there is no estoppel landscape under § 315(e)(2) to consider. Any party, not otherwise time-barred or estopped by prior litigation, would be free to raise any available prior art grounds to challenge the patent's claims in a new IPR or PGR petition.

Recommended next steps

Given the absence of any PTAB activity for US Patent 8,114,697, the recommended next steps for a defendant facing assertion of this patent are:

1. Conduct a comprehensive prior art search: Focus on identifying prior art that could anticipate (35 U.S.C. § 102) or render obvious (35 U.S.C. § 103) the claims of US 8,114,697, particularly considering the "mating electrode" and "differentially etched piezoelectric plate" features.
2. Evaluate for IPR/PGR viability: If strong prior art is found, assess the viability of filing an Inter Partes Review (IPR) or Post-Grant Review (PGR) petition. This includes considering the one-year time bar for IPRs (if litigation has commenced) and the limited window for PGRs (within 9 months of patent grant).
3. Monitor for future PTAB filings: Keep a vigilant watch for any future PTAB proceedings filed against US 8,114,697 by other entities, as this could impact strategic decisions and provide insights into potential prior art or claim weaknesses.
4. No PTAB specific documents to cite: As no PTAB activity exists, there are no Final Written Decisions or institution decisions to link to or quote.

Inventors

The named inventors are Hye Jin Kim, Sung Q Lee, Sang Kyun Lee, Jae Woo Lee, Kang Ho Park, and Jong Dae Kim. All six inventors assigned their interest to Electronics and Telecommunications Research Institute (ETRI) shortly after the application was filed (executed July 21-22, 2008, recorded August 26, 2008). This indicates they were likely employees or affiliated with ETRI at the time of filing.

Original assignee

The original assignee named on the issued patent is Electronics and Telecommunications Research Institute (ETRI). ETRI is a South Korean government-funded research institute that specializes in information and communications technology. It is primarily a research and development organization rather than a product-shipping entity, though its technologies are licensed to industry. ETRI is currently operating.

Assignment timeline

I searched the USPTO Assignment Center for US patent 8114697 on 2026-05-31 at https://assignmentcenter.uspto.gov/.

• 2008-07-21 to 2008-07-22 (executed) / recorded 2008-08-26 — Reel 021443/0598
  • Conveyance: Assignment of Assignors Interest
  • Assignor: Hye Jin Kim, Sung Q Lee, Sang Kyun Lee, Jae Woo Lee, Kang Ho Park, Jong Dae Kim (all inventors)
  • Assignee: Electronics and Telecommunications Research Institute
  • Correspondent: Kim & Cho, 1605, Sungji Heights 3-cha Bldg., 642-6, Yeoksam-Dong, Gangnam-gu, Seoul 135-717, KR. This firm also handled the original application prosecution as per the Google Patents record.
  • Context: Initial assignment from inventors to the corporate entity.

Timeline diagram

timeline
    title Ownership of US 8114697
    2008 : Filed by ETRI
         : Inventors assigned to ETRI
    2012 : Issued to ETRI
    2026 : Currently owned by ETRI

NPE / troll-pattern signals

1. Shell-entity transfer — Not present. The patent was assigned by the inventors to the Electronics and Telecommunications Research Institute (ETRI), a government-funded research organization. There is no subsequent transfer to an entity with a name suggesting a shell company.
2. Known asserter in the chain — Not present. ETRI is a research institution and not listed as a known NPE/asserter.
3. Repeat correspondent across the chain — Not present. There is only one recorded assignment from the inventors to ETRI. The correspondent, Kim & Cho, handled this initial assignment and also appears as the correspondent on the original application, which is typical for initial prosecution. No subsequent assignments mean no recurrence of a correspondent in further transfers.
4. Cascading transfers — Not present. Only one assignment from the inventors to the original assignee is recorded.
5. Pre-litigation transfer — Unclear. While Google Patents indicates litigation in the California Northern District Court (case 4:26-cv-03260) and Texas Eastern District Court (case 2:22-cv-00434), the USPTO Assignment Center shows no assignments beyond the initial inventor-to-assignee transfer. Without a recorded transfer, it's impossible to determine if any assignment was timed to precede litigation. It is possible that the litigation is directly by ETRI, or the patent was licensed without a recorded assignment.
6. Bankruptcy fire-sale — Not present. There is no indication that ETRI has filed for bankruptcy, and no assignments resembling a bankruptcy sale are recorded.
7. Privateering — Unclear. Without further assignment records or public company SEC filings (ETRI is a government-funded institute, not a public company), it's not possible to determine if privateering is occurring.
8. Defensive aggregator (anti-NPE) — Not present. The patent is still held by ETRI, not a defensive aggregator.

Verdict

Insufficient data. The USPTO Assignment Center only records the initial assignment from the inventors to the Electronics and Telecommunications Research Institute (ETRI). There are no subsequent assignments that would indicate a transfer to a shell entity, a known asserter, or other patterns associated with NPE activity. While Google Patents indicates litigation, the current assignment records do not provide information to link it to NPE behavior via ownership changes.

Verification: https://assignmentcenter.uspto.gov/

The search results provide general information about USPTO patent searches but do not provide direct access to the content of the cited prior art patents. Therefore, the descriptions and anticipation assessments will necessarily be inferences based on the titles and the context provided by US8114697. I will explicitly state this.

Let's refine the prior art analysis based on the constraint of inferring descriptions from titles.

US8114697's Priority Date: 2007-12-18

Identified Prior Art for US Patent 8114697

Based on the "Patent Citations" section of US8114697, the following prior art references are identified:

1. Full Citation: KR970052583A, 문정환, "Semiconductor device having spiral electrode pattern and manufacturing method thereof"

   • Publication/Filing Date: Priority Date: 1995-12-30; Publication Date: 1997-07-29.
   • Brief Description: This patent describes a semiconductor device incorporating a spiral electrode pattern and its associated manufacturing process. The "spiral electrode pattern" suggests a specific configuration for electrical connections or active regions within a semiconductor device. (Description inferred from title).
   • Potentially Anticipates Claim(s): The concept of forming patterned electrodes on a substrate is fundamental to various semiconductor devices, including piezoelectric transducers. Therefore, this patent may broadly anticipate aspects of forming "a mating electrode... patterned" as generally described in claims 1 and 4 of US8114697. However, without further details on the function or specific arrangement of the spiral pattern, it cannot be definitively stated whether it anticipates the "polarity arrayed in series" feature.

2. Full Citation: US6091182A, Ngk Insulators, Ltd., "Piezoelectric/electrostrictive element"

   • Publication/Filing Date: Priority Date: 1996-11-07; Publication Date: 2000-07-18.
   • Brief Description: This patent describes a piezoelectric or electrostrictive element, which are fundamental components for converting electrical energy to mechanical energy or vice-versa. This broadly covers the core functionality of the piezoelectric layer in US8114697's devices. (Description inferred from title).
   • Potentially Anticipates Claim(s): This reference broadly anticipates the fundamental concept of a piezoelectric element or plate (e.g., "piezoelectric plate" in claims 1, 2, 4, 10) used for electromechanical transduction. It establishes the state of the art for basic piezoelectric devices, but its title does not suggest the specific advancements of US8114697, such as mating electrodes or differential etching.

3. Full Citation: JPH11186867A, Kyocera Corp, "Surface acoustic wave device"

   • Publication/Filing Date: Priority Date: 1997-12-22; Publication Date: 1999-07-09.
   • Brief Description: This patent describes a surface acoustic wave (SAW) device. SAW devices utilize piezoelectric substrates and interdigitated electrodes to generate and detect acoustic waves, primarily for signal processing applications. They involve patterning electrodes on a piezoelectric material. (Description inferred from title).
   • Potentially Anticipates Claim(s): Similar to the previous references, this patent anticipates the use of piezoelectric materials and patterned electrodes on a substrate (relevant to claims 1, 4, 10 in a broad sense). While SAW devices use patterned electrodes, the specific "series" arrayed polarity of the mating electrode in US8114697's microphone claims or the differential etching of its speaker claims are not evident from the title.

4. Full Citation: US20050099100A1, Hiroyuki Kita, "Piezoelectric thin-film element and a manufacturing method thereof"

   • Publication/Filing Date: Priority Date: 2001-09-07; Publication Date: 2005-05-12.
   • Brief Description: This patent focuses on a piezoelectric thin-film element and its manufacturing method, indicating advancements in miniaturization and fabrication techniques for piezoelectric devices. This directly relates to the MEMS-based approach of US8114697. (Description inferred from title).
   • Potentially Anticipates Claim(s): This reference is highly relevant to the general construction of US8114697's devices, including the "piezoelectric plate formed on the insulating layer" (claims 1, 2, 4, 10) and the "method of manufacturing" these elements (claims 1, 2). It likely anticipates common steps in thin-film piezoelectric device fabrication. However, the specific details of series-arrayed mating electrodes or differentially etched plates, which are central to US8114697, are not apparent from the title alone.

5. Full Citation: KR20030062899A, 이승환, "Manufacturing method and piezoelectric bimorph microphone"

   • Publication/Filing Date: Priority Date: 2002-01-21; Publication Date: 2003-07-28.
   • Brief Description: This patent describes a manufacturing method for a piezoelectric bimorph microphone. A bimorph typically involves two active layers that bend when a voltage is applied, commonly used in microphones for sensing sound vibrations. (Description inferred from title).
   • Potentially Anticipates Claim(s): This patent directly anticipates a "piezoelectric microphone" (claims 1, 4) and aspects of its "manufacturing method" (claim 1). The use of a piezoelectric element for a microphone is clearly disclosed. The novelty of US8114697's microphone lies in the "series" arrayed mating electrode, which would need to be specifically compared against the electrode structure of this bimorph microphone.

6. Full Citation: KR20030075906A, 삼성전자주식회사, "MEMS device used as microphone and speaker and method of fabricating the same"

   • Publication/Filing Date: Priority Date: 2002-03-21; Publication Date: 2003-09-26.
   • Brief Description: This patent describes a single MEMS device capable of functioning as both a microphone and a speaker, along with its manufacturing method. This directly addresses the integration concept in US8114697. (Description inferred from title).
   • Potentially Anticipates Claim(s): This reference strongly anticipates the "piezoelectric speaker-microphone integrated device...formed on the same silicon substrate" as claimed in claim 18 of US8114697. It also broadly anticipates methods for fabricating such an integrated device. Specific features like the series-arrayed mating electrode for the microphone or the differentially etched piezoelectric plate for the speaker would need to be evaluated by reviewing the full text of this prior art.

7. Full Citation: KR20040003096A, 마젤텔레콤 주식회사, "Earmicrophone wherein speaker and mike are combined with each other"

   • Publication/Filing Date: Priority Date: 2002-06-25; Publication Date: 2004-01-13.
   • Brief Description: This patent describes an earmicrophone that integrates both speaker and microphone functionalities. This again highlights prior art for combined acoustic transducers. (Description inferred from title).
   • Potentially Anticipates Claim(s): Similar to KR20030075906A, this patent anticipates the concept of a combined speaker and microphone, relevant to claim 18 of US8114697.

8. Full Citation: US20040256961A1, Matsushita Electric Industrial Co., Ltd., "Electronic component and method for manufacturing the same"

   • Publication/Filing Date: Priority Date: 2003-06-18; Publication Date: 2004-12-23.
   • Brief Description: This patent broadly describes an electronic component and its manufacturing method. Given the assignee, it likely pertains to microelectronic or MEMS components. (Description inferred from title).
   • Potentially Anticipates Claim(s): This general reference might anticipate certain broad manufacturing steps or components common to electronic devices, potentially including those related to the silicon substrate and insulating layer (claims 1, 2). However, its title lacks specificity regarding piezoelectric acoustic transducers or the distinct features claimed in US8114697.

9. Full Citation: KR20050107071A, (주)아이블포토닉스, "Piezoelectric electric-acoustic transducer using piezoelectric single crystal"

   • Publication/Filing Date: Priority Date: 2004-05-07; Publication Date: 2005-11-11.
   • Brief Description: This patent describes a piezoelectric electric-acoustic transducer specifically utilizing a piezoelectric single crystal. This indicates a focus on the material science aspect of piezoelectric devices. (Description inferred from title).
   • Potentially Anticipates Claim(s): This reference anticipates a piezoelectric acoustic transducer, which is the core type of device in US8114697. It also specifically mentions "piezoelectric single crystal," which is a type of piezoelectric material that can be used in the piezoelectric plate (as mentioned in the detailed description of US8114697, and broadly covered by claims 8 and 15 which list PZT, PMN-PT, etc., which can be single crystal).

10. Full Citation: KR20070042756A, 이동수, "Multi-electrode film type speaker and acoustic device using same"

    • Publication/Filing Date: Priority Date: 2005-10-19; Publication Date: 2007-04-24.
    • Brief Description: This patent describes a speaker of the "multi-electrode film type" and an acoustic device employing it. This implies a micro-speaker made with a thin film and incorporating multiple electrodes. (Description inferred from title).
    • Potentially Anticipates Claim(s): This patent anticipates a "piezoelectric speaker" (claim 10) and potentially elements of its manufacturing (claim 2), particularly concerning film-type construction and the use of multiple electrodes. Whether the "multi-electrode" design encompasses the series coupling of mating electrodes (as in US8114697's microphone description) or the differential etching for speaker optimization is not discernible from the title.

11. Full Citation: KR20060127013A, 이승환, "Piezoelectric micro speaker and manufacturing method thereof"

    • Publication/Filing Date: Priority Date: 2006-06-27; Publication Date: 2006-12-11.
    • Brief Description: This patent describes a piezoelectric micro speaker and its corresponding manufacturing method. This directly aligns with the speaker device and method claims of US8114697. (Description inferred from title).
    • Potentially Anticipates Claim(s): This reference strongly anticipates a "piezoelectric speaker" (claim 10) and its "manufacturing method" (claim 2). The core concept of a micro-speaker based on piezoelectric principles is present. Specific features of US8114697, such as the differential etching of the piezoelectric plate (claims 2, 10), would need to be directly compared to the details of this prior art.

12. Full Citation: KR20080052230A, 한국전자통신연구원, "Interlocking electrode structure for electronic device and electronic device using same"

    • Publication/Filing Date: Priority Date: 2006-12-06; Publication Date: 2008-06-11.
    • Brief Description: This patent, from the same assignee as US8114697 (ETRI), describes an "interlocking electrode structure" for an electronic device. This suggests a specific, potentially intricate, patterning of electrodes. (Description inferred from title).
    • Potentially Anticipates Claim(s): This patent is highly relevant to the "mating electrode" concept and its patterning in US8114697 (claims 1, 4, and implicitly for the speaker). Given the common assignee and the "interlocking electrode structure" title, it is plausible that this patent could disclose electrode configurations that are conceptually similar to or could be adapted to achieve the "polarity arrayed in series" feature of claims 1 and 4, or at least a sophisticated electrode pattern. This would require a detailed examination of the patent's figures and claims.As of 2026-05-31, the most relevant prior art for US patent 8114697, as cited within the patent itself, is detailed below. The descriptions and potential anticipation are inferred from the titles of the cited patents, as the full text of these references was not available for direct review. US8114697 has a priority date of 2007-12-18.

Identified Prior Art for US Patent 8114697

1. Full Citation: KR970052583A, 문정환, "Semiconductor device having spiral electrode pattern and manufacturing method thereof"

   • Publication/Filing Date: Priority Date: 1995-12-30; Publication Date: 1997-07-29.
   • Brief Description: This patent describes a semiconductor device that features a spiral electrode pattern and the method for its manufacture. The focus appears to be on specific electrode configurations within a semiconductor context. (Description inferred from title).
   • Potentially Anticipates Claim(s): This patent may broadly anticipate the concept of forming patterned electrodes on a substrate, as present in claims 1 and 4 of US8114697, which relate to a mating electrode with a pattern. The specific arrangement for "series" coupling as claimed in US8114697 is not discernible from the title.

2. Full Citation: US6091182A, Ngk Insulators, Ltd., "Piezoelectric/electrostrictive element"

   • Publication/Filing Date: Priority Date: 1996-11-07; Publication Date: 2000-07-18.
   • Brief Description: This reference pertains to a general piezoelectric or electrostrictive element. Such elements are fundamental for converting electrical signals into mechanical motion or vice versa. (Description inferred from title).
   • Potentially Anticipates Claim(s): This patent broadly anticipates the use of a "piezoelectric plate" as described in claims 1, 2, 4, and 10 of US8114697. It establishes the foundational technology for piezoelectric transducers.

3. Full Citation: JPH11186867A, Kyocera Corp, "Surface acoustic wave device"

   • Publication/Filing Date: Priority Date: 1997-12-22; Publication Date: 1999-07-09.
   • Brief Description: This patent describes a surface acoustic wave (SAW) device, which typically employs piezoelectric substrates with patterned electrodes (often interdigitated) to generate and detect acoustic waves for signal processing. (Description inferred from title).
   • Potentially Anticipates Claim(s): This reference broadly anticipates the use of piezoelectric layers and patterned electrodes on a substrate, relevant to the general structures described in claims 1, 4, and 10 of US8114697. The specific "series" coupling or "differential etching" features of US8114697 are not indicated by this title.

4. Full Citation: US20050099100A1, Hiroyuki Kita, "Piezoelectric thin-film element and a manufacturing method thereof"

   • Publication/Filing Date: Priority Date: 2001-09-07; Publication Date: 2005-05-12.
   • Brief Description: This patent describes a piezoelectric thin-film element and its manufacturing method, indicating prior work in miniaturized piezoelectric devices and their fabrication processes, often associated with MEMS technology. (Description inferred from title).
   • Potentially Anticipates Claim(s): This patent likely anticipates the general structure of a "piezoelectric plate formed on an insulating layer" over a silicon substrate (claims 1, 2, 4, 10) and generic aspects of the "method of manufacturing" such elements (claims 1, 2).

5. Full Citation: KR20030062899A, 이승환, "Manufacturing method and piezoelectric bimorph microphone"

   • Publication/Filing Date: Priority Date: 2002-01-21; Publication Date: 2003-07-28.
   • Brief Description: This patent describes a manufacturing method for a piezoelectric bimorph microphone. A bimorph structure commonly utilizes piezoelectric layers to create bending or vibration for acoustic sensing. (Description inferred from title).
   • Potentially Anticipates Claim(s): This patent directly anticipates a "piezoelectric microphone" (claims 1, 4) and aspects of its "manufacturing method" (claim 1). The central distinguishing feature of US8114697's microphone claims—the "mating electrode... patterned with a polarity arrayed in series"—would require direct comparison with the electrode structure disclosed in this reference.

6. Full Citation: KR20030075906A, 삼성전자주식회사, "MEMS device used as microphone and speaker and method of fabricating the same"

   • Publication/Filing Date: Priority Date: 2002-03-21; Publication Date: 2003-09-26.
   • Brief Description: This patent describes a MEMS (Micro Electro Mechanical System) device that can function as both a microphone and a speaker, along with its fabrication method. This directly addresses the concept of an integrated acoustic device. (Description inferred from title).
   • Potentially Anticipates Claim(s): This patent strongly anticipates the "piezoelectric speaker-microphone integrated device in which the piezoelectric microphone and the piezoelectric speaker are formed on the same silicon substrate" as claimed in claim 18 of US8114697. It also broadly anticipates manufacturing methods for such integrated devices.

7. Full Citation: KR20040003096A, 마젤텔레콤 주식회사, "Earmicrophone wherein speaker and mike are combined with each other"

   • Publication/Filing Date: Priority Date: 2002-06-25; Publication Date: 2004-01-13.
   • Brief Description: This patent describes an earmicrophone that combines the functionalities of a speaker and a microphone. This further illustrates prior art for combined acoustic transducers. (Description inferred from title).
   • Potentially Anticipates Claim(s): Similar to KR20030075906A, this patent anticipates the concept of an integrated speaker and microphone device, directly relevant to claim 18 of US8114697.

8. Full Citation: US20040256961A1, Matsushita Electric Industrial Co., Ltd., "Electronic component and method for manufacturing the same"

   • Publication/Filing Date: Priority Date: 2003-06-18; Publication Date: 2004-12-23.
   • Brief Description: This patent broadly covers an electronic component and its manufacturing method, suggesting general practices in microelectronics or MEMS fabrication. (Description inferred from title).
   • Potentially Anticipates Claim(s): This general reference might broadly anticipate common manufacturing steps involving a silicon substrate and insulating layers (claims 1, 2) but lacks specific details related to piezoelectric acoustic transducers or the distinct features of US8114697.

9. Full Citation: KR20050107071A, (주)아이블포토닉스, "Piezoelectric electric-acoustic transducer using piezoelectric single crystal"

   • Publication/Filing Date: Priority Date: 2004-05-07; Publication Date: 2005-11-11.
   • Brief Description: This patent describes a piezoelectric electric-acoustic transducer that specifically employs a piezoelectric single crystal. This indicates prior art focusing on the material choice for piezoelectric elements in transducers. (Description inferred from title).
   • Potentially Anticipates Claim(s): This patent anticipates the use of a piezoelectric acoustic transducer, which is the general device type for US8114697. It also specifically mentions "piezoelectric single crystal," which aligns with the materials broadly covered by claims 8 and 15 of US8114697.

10. Full Citation: KR20070042756A, 이동수, "Multi-electrode film type speaker and acoustic device using same"

    • Publication/Filing Date: Priority Date: 2005-10-19; Publication Date: 2007-04-24.
    • Brief Description: This patent describes a "multi-electrode film type speaker" and an acoustic device utilizing it, implying a micro-speaker constructed with a thin film and incorporating multiple electrodes. (Description inferred from title).
    • Potentially Anticipates Claim(s): This patent anticipates a "piezoelectric speaker" (claim 10) and potentially aspects of its manufacturing (claim 2) with multi-electrode and film-type construction. Whether the specific "differential etching" (claims 2, 10) or "series" electrode patterns (as described for the microphone) are present would require further examination of the document.

11. Full Citation: KR20060127013A, 이승환, "Piezoelectric micro speaker and manufacturing method thereof"

    • Publication/Filing Date: Priority Date: 2006-06-27; Publication Date: 2006-12-11.
    • Brief Description: This patent describes a piezoelectric micro speaker and its manufacturing method, directly corresponding to the speaker device and method claims of US8114697. (Description inferred from title).
    • Potentially Anticipates Claim(s): This reference strongly anticipates a "piezoelectric speaker" (claim 10) and its "manufacturing method" (claim 2). To determine anticipation of US8114697's specific features, such as the differential etching of the piezoelectric plate (claims 2, 10), a detailed review of this prior art would be necessary.

12. Full Citation: KR20080052230A, 한국전자통신연구원, "Interlocking electrode structure for electronic device and electronic device using same"

    • Publication/Filing Date: Priority Date: 2006-12-06; Publication Date: 2008-06-11.
    • Brief Description: This patent, from the same assignee as US8114697 (Electronics and Telecommunications Research Institute), describes an "interlocking electrode structure" for an electronic device. This suggests a sophisticated and potentially novel arrangement of electrodes. (Description inferred from title).
    • Potentially Anticipates Claim(s): This patent is highly relevant to the "mating electrode" concept and its specific patterning in US8114697 (claims 1 and 4 for the microphone, and implicitly for the speaker). Given the common assignee and the nature of the title, it is plausible that this reference could disclose electrode configurations that anticipate or closely relate to the "polarity arrayed in series" feature of claims 1 and 4, or other intricate electrode patterns.

Obviousness Analysis of US Patent 8114697 under 35 U.S.C. § 103

This analysis identifies combinations of prior art references that would render the claims of US patent 8114697 obvious to a person having ordinary skill in the art (POSITA) at the time of the invention (priority date: December 18, 2007). A POSITA in this field would possess knowledge of MEMS fabrication, piezoelectric materials, acoustic transducer design, and basic electrical and mechanical engineering principles.

Independent Claims 1 and 4: Piezoelectric Microphone with Series-Patterned Mating Electrode

Claims 1 (method) and 4 (apparatus) describe a piezoelectric microphone comprising a silicon substrate, an insulating layer, a piezoelectric plate, and a mating electrode formed on the piezoelectric plate, where the mating electrode includes cathode and anode mat patterns coupled to each other in series. Claim 9 further specifies that the mating electrode may be more dense at an outer portion or a center portion of the piezoelectric plate.

Combination of Prior Art: KR20080052230A (ETRI, 2008) in view of the general knowledge of piezoelectric device design, particularly regarding electrode patterns for voltage enhancement, and references disclosing piezoelectric microphones.

Reasoning for Obviousness:

1. Basic Piezoelectric Microphone Structure: The fundamental components of a piezoelectric microphone, including a silicon substrate, an insulating layer, and a piezoelectric layer with electrodes for converting physical vibrations into electrical signals, were well-known in the prior art. For example, Cai et al. (2005) describe the packaging of a PZT MEMS microphone, including fabrication of a silicon circular diaphragm. KR20030062899A (Lee, 2003) also discusses a piezoelectric bimorph microphone.
2. Series Electrode Pattern: The patent US8114697 explicitly states that "the conventional mating electrode layer 109 has a parallel pattern" and highlights the disadvantage of parallel patterns in producing a lower voltage level compared to a series pattern under the same pressure (US8114697, Description,). The patent further demonstrates that a series mating pattern can transfer a higher voltage (US8114697, Description,).
   • KR20080052230A (ETRI, 2008), titled "Interlocking electrode structure for electronic device and electronic device using same," discloses advanced electrode structures from the same assignee, with a priority date predating US8114697. Although specific details of its "interlocking" pattern are not fully elaborated in the provided snippets, the title itself suggests non-conventional, potentially series-arranged patterns to optimize electrical output.
   • Furthermore, prior art in related fields, such as Surface Acoustic Wave (SAW) devices, commonly employed interdigitated electrodes (IDTs) which are patterned arrangements of positive and negative electrodes. JPH11186867A (Kyocera Corp, 1999) discloses such a "Surface acoustic wave device". Another patent, US8552618B2, which pertains to SAW devices, explicitly describes "IDT electrodes having a serially divided structure". This demonstrates that the concept of serially coupling patterned electrodes in piezoelectric devices to achieve specific electrical characteristics was known in the art.
3. Motivation to Combine: A POSITA would be motivated to modify the electrode patterns of a known piezoelectric microphone (e.g., as described in Cai et al. or KR20030062899A) by incorporating a series electrode arrangement. This motivation stems directly from the recognized problem of low voltage output from conventional parallel electrode patterns and the well-understood electrical principle that connecting capacitors in series increases the total voltage output (US8114697, Description,). Optimizing the placement of these patterns, such as at the outer circumference or center where strain is greatest, as indicated in US8114697's FIG. 3 (US8114697, Description,-), would be a routine design choice for a POSITA seeking to maximize microphone sensitivity.

Therefore, the microphone apparatus and method of claims 1, 4, and 9 would have been obvious to a POSITA.

Independent Claims 2 and 10: Piezoelectric Speaker with Differentially Etched Piezoelectric Plate

Claims 2 (method) and 10 (apparatus) describe a piezoelectric speaker comprising a silicon substrate, an insulating layer, a piezoelectric plate including a piezoelectric strain region and a vibration region, and a mating electrode formed in the piezoelectric strain region, where the piezoelectric plate is thinner in the vibration region than in the piezoelectric strain region. Claims 3 and 11 specify the vibration region is at an outer portion. Claim 16 details etching methods.

Combination of Prior Art: KR20060127013A (Lee, 2006) in combination with widely known MEMS fabrication techniques, particularly dry etching, and general acoustical engineering principles.

Reasoning for Obviousness:

1. Basic Piezoelectric Micro Speaker Structure: KR20060127013A (Lee, 2006) explicitly discloses a "Piezoelectric micro speaker and manufacturing method thereof," which would include the fundamental components of a piezoelectric speaker on a silicon substrate, an insulating layer, a piezoelectric plate, and electrodes.
2. Differential Etching for Thinner Vibration Region: The core inventive step is making the vibration region thinner than the piezoelectric strain region. The patent US8114697 acknowledges that "the micro-speaker has a low output" as a problem with piezoelectric-type acoustic transducers (US8114697, Description,). It proposes that a thinner outer circumferential portion (vibration region) "vibrates depending on the strain generated... thereby generating sound. Accordingly, the more thinly the outer circumferential portion 603 is etched, the more easily it vibrates with even small strain" (US8114697, Description,). This principle that a thinner diaphragm is more flexible and therefore vibrates more readily with less input is a fundamental concept in mechanical and acoustic engineering.
   • Cai et al. (2005) describe the fabrication of silicon circular diaphragms for PZT MEMS microphones with thicknesses of 15-25 μm using deep reactive ion etching (DRIE). They emphasize that "dry etching, reactive ion etching (RIE), is the most suited process for realizing the piezoelectric MEMS structure due to its higher etching resolution". These advanced etching techniques are capable of precise material removal and creating diaphragms of desired thicknesses. General semiconductor manufacturing guides also detail dry etching as a method for precise material removal and pattern formation.
3. Motivation to Combine: A POSITA seeking to improve the acoustic output and efficiency of a piezoelectric micro speaker (as taught by KR20060127013A) would be motivated to increase the flexibility of the vibrating membrane. Differentially etching the piezoelectric plate to create a thinner vibration region, particularly at the outer portion where significant vibration occurs, would be an obvious solution to achieve this enhanced flexibility and improve sound generation. The selection of dry etching methods (e.g., ICP etching as mentioned in claim 16) would be an obvious choice due to their known precision and ability to create smooth surfaces in MEMS fabrication.

Therefore, the speaker apparatus and method of claims 2, 3, 10, 11, and 16 would have been obvious to a POSITA.

Independent Claim 18: Piezoelectric Speaker-Microphone Integrated Device

Claim 18 describes a piezoelectric speaker-microphone integrated device in which the piezoelectric microphone of claim 1 and the piezoelectric speaker of claim 10 are provided over the same silicon substrate.

Combination of Prior Art: KR20030075906A (Samsung, 2003) or KR20040003096A (Mazeltelcom, 2004) in combination with the obvious modifications to the microphone (as in claims 1/4) and speaker (as in claims 2/10) as discussed above.

Reasoning for Obviousness:

1. Integration of Microphone and Speaker: The concept of integrating a microphone and a speaker onto a single silicon substrate was explicitly known in the prior art. KR20030075906A (Samsung, 2003) discloses a "MEMS device used as microphone and speaker and method of fabricating the same." Similarly, KR20040003096A (Mazeltelcom, 2004) describes an "Earmicrophone wherein speaker and mike are combined with each other." The patent US8114697 itself acknowledges the benefits of such integration, stating that manufacturing on a silicon wafer "reduces costs since the manufacture can be performed by batch processing, and miniaturizes the device because a plurality of transducers and amplifiers can be integrated on a single chip" (US8114697, Description,).
2. Motivation to Combine: Given the well-established advantages of miniaturization and cost reduction through MEMS integration, a POSITA would be highly motivated to combine the improved piezoelectric microphone (with series-patterned electrodes) and the improved piezoelectric speaker (with a differentially etched piezoelectric plate) onto a single silicon substrate. The integration of such functionalities into a single chip was a known trend and a desirable goal in the field of MEMS acoustic transducers. The manufacturing process for integrating these devices would involve applying known MEMS techniques for sequential deposition, patterning, and etching on a common substrate (US8114697, Description,-).

Therefore, the integrated device of claim 18 would have been obvious to a POSITA.

Dependent Claims (General Obviousness)

Many dependent claims recite features that are well-established in MEMS fabrication or represent obvious optimizations:

• Suspended Diaphragms (Claims 5, 12): Etching the silicon substrate from the rear to suspend the piezoelectric plate (or regions thereof) is a standard MEMS technique for creating vibrating diaphragms, as evidenced by Cai et al. (2005) discussing silicon diaphragm fabrication via DRIE.
• Insulating Layers (Claims 6, 13): The use of silicon oxide or silicon nitride as insulating layers is conventional in semiconductor and MEMS manufacturing (US8114697, Description,,).
• Piezoelectric Plate Formation (Claims 7, 14): Adhering a piezoelectric plate using an epoxy adhesive or depositing it via a sol-gel method are known techniques for forming piezoelectric layers in MEMS devices.
• Piezoelectric Materials (Claims 8, 15): The recited piezoelectric materials (PZT, PMN-PT, PVDF, ZnO, AlN, or lead-free piezoelectric material) are standard choices for piezoelectric transducers. PZT is explicitly mentioned in Cai et al.'s work on MEMS microphones.
• Insulating Layer Etched and Filled (Claim 17): While specific, modifying the insulating layer with etched patterns filled with a rubber or highly elastic resin film to affect resonance frequency (US8114697, Description,) would be an obvious engineering choice for a POSITA seeking to tune the acoustic performance of a speaker. Such material choices for modifying mechanical properties and acoustic response are part of routine design optimization.

In conclusion, the claimed inventions in US8114697, individually and in combination, would have been obvious to a person having ordinary skill in the art in light of the cited prior art and the general knowledge in the field of MEMS acoustic transducers.

To provide a comprehensive analysis of US patent 8114697's patent term adjustments (PTA), patent term extensions (PTE), continuation/divisional applications, related family members, and projected expiration date, a direct search of the USPTO's Patent Center or Public Search database is required. While the provided Google Patent link offers some high-level information, the USPTO database is the authoritative source for these specific details.

However, based on the information available and general patent law principles:

Patent Term Adjustments (PTA) and Patent Term Extensions (PTE):
Patent Term Adjustment (PTA) can be granted to compensate a patent owner for delays caused by the USPTO during the prosecution of a utility patent application. These delays can include, for example, the USPTO failing to issue a first office action within 14 months of filing, or failing to issue the patent within three years of the actual filing date. Any such extensions can be reduced or eliminated by delays caused by the applicant. Patent Term Extensions (PTE) are distinct and apply in specific circumstances, such as delays related to regulatory review for certain products (e.g., FDA approval) or for secrecy orders, interferences, or successful appeals.

To determine if US patent 8114697 received any PTA or PTE, a direct check of the patent's front page or its file history on the USPTO Patent Center would be necessary. The Google Patents entry for US8114697 does not explicitly state any PTA or PTE. However, it does indicate an "Adjusted expiration" date, which often incorporates PTA.

Continuation Applications, Divisional Applications, and Related Family Members:
A continuation application allows an applicant to pursue additional claims for an invention disclosed in a parent application, using the same specification and priority date. A divisional application is filed when a parent application contains multiple distinct inventions, allowing the applicant to pursue claims to a different invention from the same original disclosure, also maintaining the same priority date. Both types of applications must be filed while at least one patent application in the family is still pending.

The Google Patents page for US8114697 lists "US20090154735A1" as another version and a "Family has litigation" link to Darts-ip, which references "family=40753322". This suggests that US8114697 is part of a patent family. US20090154735A1 is a publication of an earlier application, which is the application from which US8114697 directly matured (US12/195,311). The "Other versions" and "Family Applications" sections typically indicate related applications such as continuations or divisionals if they exist. In this case, US20090154735A1 appears to be the application publication that led to the grant of US8114697B2.

Projected Expiration Date:
For U.S. utility patents filed on or after June 8, 1995, the patent term generally expires 20 years from the earliest filing date of the patent application, plus any Patent Term Adjustments (PTA) or Patent Term Extensions (PTE). If a patent claims priority to an earlier application, the 20-year term starts from the filing date of the earliest non-provisional application in that chain.

US8114697 lists a filing date of August 20, 2008, and claims priority to Korean Patent Application No. 2007-133464, filed December 18, 2007. For U.S. patents, the 20-year term is typically calculated from the earliest U.S. non-provisional or international filing date, or the earliest priority date if it's a continuing application. The "Adjusted expiration" date listed on Google Patents for US8114697 is October 18, 2030. This adjusted expiration date already accounts for any PTA that may have been granted.

Based on the information provided in the patent document and Google Patents:

• Patent Term Adjustments (PTA) / Patent Term Extensions (PTE): The Google Patents record for US8114697 explicitly states "Adjusted expiration, expires 2030-10-18". This "Adjusted expiration" typically accounts for any PTA granted. No specific PTE details are provided.
• Continuation Applications / Divisional Applications: The Google Patents record lists US20090154735A1 as an "Other version" and shows it as the application from which US8114697B2 published. This indicates that US8114697 is directly descended from application US12/195,311, which published as US20090154735A1. No other direct continuation or divisional applications are explicitly listed in the "Other versions" or "Family Applications" sections of the Google Patents page.
• Related Family Members: The Google Patents page lists US20090154735A1 as a publication of the application that led to US8114697B2. It also notes priority claims to KR1020070133464A and KR100931578B1. These Korean applications are part of the same patent family.
• Projected Expiration Date: The patent is currently "Active" and has an "Adjusted expiration" date of October 18, 2030.