Innoscience America, Inc. is the U.S. subsidiary of InnoScience (Suzhou) Technology Holding Co., Ltd., a publicly listed Chinese semiconductor company headquartered in Suzhou, Jiangsu, China. Founded in December 2015, the parent company, Innoscience, became publicly listed on the Hong Kong Stock Exchange (HKEX: 02577.HK) on December 30, 2024. Innoscience America, Inc. maintains an office in Santa Clara, California. As of recent reports, Innoscience employs over 1,600 people globally, including more than 600 R&D professionals. The group's total revenue for 2025 was RMB 1,213.3 million (approximately USD 169 million as of December 31, 2025, TTM).
Innoscience is recognized as the world's largest GaN-on-Si (Gallium Nitride on Silicon) Integrated Device Manufacturer (IDM). The company designs, develops, and mass manufactures high-performance GaN power devices and integrated circuits (ICs) using 8-inch GaN-on-Si wafer technology. Its product portfolio includes GaN HEMTs (High Electron Mobility Transistors), GaN ICs, driver ICs, wafers, discrete devices, and modules. These solutions are utilized across diverse applications such as consumer electronics (e.g., fast charging, laptops), automotive (e.g., LiDAR, 48V DCDC power supply), AI data centers, renewable energy, and industrial power systems.
In terms of patent litigation, Innoscience America, Inc. appears in the provided data as a plaintiff in one case and a defendant in zero cases. The sole tracked case, Innoscience America, Inc. et al. v. Infineon Technologies North America Corp, was filed on February 4, 2025, at the Patent Trial and Appeal Board (PTAB). This indicates an active posture in challenging or asserting intellectual property rights. The parent company, Innoscience (Suzhou) Technology Holding Co., Ltd., has also been involved in broader patent disputes, including investigations by the U.S. International Trade Commission (USITC) and multiple lawsuits with Infineon Technologies in various jurisdictions. In December 2025, Innoscience announced it had prevailed in a U.S. patent dispute with Infineon.