Derivative works

Defensive Disclosure for US Patent 10379301B2: Multi-channel parallel optical receiving device

Current Date: 2026-05-28

This document outlines various derivative variations of the multi-channel parallel optical receiving device described in US Patent 10379301B2. The purpose of this defensive disclosure is to establish prior art, thereby rendering future incremental improvements by competitors as obvious or non-novel. The derivations are based on the core claims of the patent, particularly independent Claim 1, which broadly covers the device components and the angled reflection mechanism, and Claim 7, which specifies a 42-degree angle.

Derivatives of Core Claims

1. Material & Component Substitution

Derivative 1.1: Polymer Waveguide Array with Organic Photodiodes on Flexible Substrate

• Enabling Description: This derivative replaces the silica-on-silicon arrayed waveguide grating (AWG) with a polymer-based AWG fabricated on a flexible polymer substrate (e.g., polyimide or PEN). The output end of the polymer AWG features an integrated, precisely molded or laser-ablated micro-mirror structure at a predetermined angle (e.g., 41-46 degrees) to achieve total internal reflection (TIR) of the demultiplexed optical signals. The plurality of optoelectronic diodes are replaced with an array of organic photodiodes (OPDs) directly deposited and patterned onto the same flexible polymer substrate, electrically connected to a flexible light receiving chip (e.g., an organic thin-film transistor (OTFT) TIA array) via anisotropic conductive film (ACF) bonding. The flexible substrate eliminates the need for a rigid carrier, with the entire assembly integrated into a compact, conformable optical film.
• Mermaid Diagram:

  graph TD
      A[Optical Fiber Connector] --> B{Polymer AWG on Flexible Substrate};
      B -- Multi-channel Optical Signals --> C{Integrated Micro-Mirror (41-46 deg)};
      C -- Reflected Signals --> D[Array of Organic Photodiodes (OPDs)];
      D -- Electrical Signals --> E[Flexible OTFT TIA Array (ACF Bonded)];
      E -- Output --> F[Flexible Circuit Interconnect];
      style B fill:#f9f,stroke:#333,stroke-width:2px
      style D fill:#bbf,stroke:#333,stroke-width:2px
      style E fill:#bfb,stroke:#333,stroke-width:2px
  

Derivative 1.2: Silicon Nitride AWG with Germanium-on-Silicon Photodetectors on Silicon Optical Bench

• Enabling Description: This derivative employs a silicon nitride (SiN) AWG integrated on a silicon optical bench (SiOB) platform. The SiN AWG offers high refractive index contrast, enabling tighter bends and a more compact footprint. The output facets of the AWG are precisely etched (e.g., using reactive ion etching) to form angled reflective surfaces (e.g., 42 degrees, potentially coated with a thin dielectric layer for enhanced reflection) that direct the demultiplexed signals upward. A plurality of germanium-on-silicon (Ge-on-Si) photodetectors, optimized for near-infrared detection and high responsivity, are flip-chip bonded onto the SiOB immediately above the AWG's output facets. A silicon-germanium (SiGe) BiCMOS trans-impedance amplifier (TIA) array is co-integrated on the same SiOB, electrically connected to the Ge-on-Si photodetectors via short, low-inductance metallic interconnects formed during the flip-chip bonding process. The SiOB itself serves as the rigid carrier, providing precise alignment and thermal stability.
• Mermaid Diagram:

  graph TD
      A[Optical Fiber Connector] --> B{SiN AWG on SiOB};
      B -- Multi-channel Optical Signals --> C{Etched Angled Facets (42 deg)};
      C -- Reflected Signals --> D[Ge-on-Si Photodetector Array (Flip-Chip)];
      D -- Electrical Signals --> E[SiGe BiCMOS TIA Array (Co-integrated)];
      E -- Output --> F[SiOB Electrical Interface];
      style B fill:#fcc,stroke:#333,stroke-width:2px
      style D fill:#ccf,stroke:#333,stroke-width:2px
      style E fill:#cfc,stroke:#333,stroke-width:2px
  

Derivative 1.3: Grating Coupler-AWG with InGaAs Avalanche Photodiodes on Ceramic Carrier

• Enabling Description: This derivative utilizes an AWG that employs grating couplers at its input and output to transition between optical fibers and the planar waveguide, suitable for surface coupling from a fiber array. The output ends of the AWG, after demultiplexing, terminate in a series of output waveguides with integrated angled Bragg grating reflectors (e.g., 43 degrees), designed to diffract and reflect the optical signals out of the plane of the waveguide. The carrier is a multi-layer ceramic substrate (e.g., Alumina, AlN) providing excellent thermal management and high-frequency electrical routing. An array of InGaAs avalanche photodiodes (APDs), chosen for their high sensitivity and internal gain, are mounted on the ceramic carrier using thermosonic gold wire bonding. A custom-designed TIA array, implemented in SiGe BiCMOS technology, is mounted adjacent to the APD array on the same ceramic substrate, also interconnected by wire bonding. This configuration provides high signal-to-noise ratio for weak optical signals.
• Mermaid Diagram:

  graph TD
      A[Optical Fiber Array (Grating Coupled)] --> B{AWG with Output Grating Reflectors};
      B -- Diffracted/Reflected Signals --> C[InGaAs APD Array (Wire Bonded)];
      C -- Amplified Electrical Signals --> D[SiGe BiCMOS TIA Array];
      D -- Output --> E[Ceramic Carrier Electrical Interface];
      style B fill:#ffe,stroke:#333,stroke-width:2px
      style C fill:#eff,stroke:#333,stroke-width:2px
      style D fill:#efe,stroke:#333,stroke-width:2px
  

2. Operational Parameter Expansion

Derivative 2.1: Cryogenic Ultra-High Channel Count Receiver for Quantum Applications

• Enabling Description: This variant operates at cryogenic temperatures (e.g., 4K) for applications such as quantum computing interconnects or deep-space communication. The AWG is fabricated from a cryogenically stable material system, such as doped silica on a silicon substrate, optimized for minimal thermal expansion and refractive index change at low temperatures. The output end features a precisely etched silicon micro-mirror array with an angle of 44 degrees, designed for optimal reflection efficiency in vacuum at cryogenic temperatures. The optoelectronic diodes are replaced with a superconducting nanowire single-photon detector (SNSPD) array, offering ultra-high sensitivity and picosecond-level timing resolution, directly flip-chip bonded onto the silicon carrier. The light receiving chip is a cryo-CMOS trans-impedance amplifier (TIA) array, co-located on the same carrier and interconnected using superconducting interconnects, providing ultra-low noise amplification at quantum limited regimes. The entire assembly is integrated within a cryostat, with optical fiber input via a vacuum feedthrough.
• Mermaid Diagram:

  graph TD
      A[Cryogenic Optical Fiber Input] --> B{Cryo-Stable AWG};
      B -- Demuxed Quanta --> C{Etched Si Micro-Mirror Array (44 deg)};
      C -- Reflected Single Photons --> D[SNSPD Array (Flip-Chip)];
      D -- Electrical Pulses --> E[Cryo-CMOS TIA Array];
      E -- Output --> F[Cryogenic Electrical Interface];
      style B fill:#dda,stroke:#333,stroke-width:2px
      style D fill:#aadd,stroke:#333,stroke-width:2px
      style E fill:#adad,stroke:#333,stroke-width:2px
  

Derivative 2.2: Extreme-Frequency Multi-Terabit Receiver for Data Center Interconnects

• Enabling Description: This derivative is engineered for ultra-high data rates exceeding multiple terabits per second, suitable for next-generation data center interconnects. The AWG is a compact, low-loss silicon photonics device, designed for dense wavelength division multiplexing (DWDM) of 128 channels. The output facets of the AWG are defined by plasma etching to create highly uniform 42-degree reflective surfaces. The optoelectronic diodes are replaced with a linear array of ultra-fast resonant cavity enhanced (RCE) photodetectors (e.g., InGaAs/InP or SiGe), capable of operation up to 200 Gbps per channel. These RCE PDs are flip-chip bonded to a high-frequency laminate carrier. The light receiving chip comprises a corresponding array of wideband indium phosphide (InP) heterojunction bipolar transistor (HBT) TIAs, co-integrated onto the same high-frequency carrier with impedance-matched transmission lines for each channel. This architecture supports an aggregate data throughput exceeding 25.6 Tbps.
• Mermaid Diagram:

  graph TD
      A[Multi-Terabit Optical Input] --> B{Si-Photonics AWG (128 Ch)};
      B -- DWDM Signals --> C{Plasma Etched Reflectors (42 deg)};
      C -- Reflected Ultra-Fast Signals --> D[RCE Photodetector Array (200Gbps/Ch)];
      D -- High-Frequency Electrical Signals --> E[InP HBT TIA Array (Impedance Matched)];
      E -- Output --> F[High-Speed Electrical Interface];
      style B fill:#cba,stroke:#333,stroke-width:2px
      style D fill:#bac,stroke:#333,stroke-width:2px
      style E fill:#bca,stroke:#333,stroke-width:2px
  

3. Cross-Domain Application

Derivative 3.1: Automotive LIDAR Multi-Spectral Receiver

• Enabling Description: This device is adapted for automotive LIDAR systems for autonomous vehicles, capable of receiving and demultiplexing optical signals from multiple laser wavelengths. The AWG is designed to separate different LIDAR wavelengths (e.g., 905nm, 1550nm, and other proprietary wavelengths for atmospheric compensation) reflected from objects. It is fabricated on a robust silicon carbide (SiC) platform for high temperature stability and vibration resistance inherent in automotive environments. The AWG output facets feature integrated 45-degree polished surfaces with broadband anti-reflection coatings for efficient reflection across the LIDAR spectrum. An array of custom-designed silicon avalanche photodiodes (Si-APDs) and InGaAs APDs are monolithically integrated or flip-chip bonded onto the SiC carrier, with a temperature-hardened CMOS TIA array co-integrated, for detecting the multi-spectral LIDAR returns. This enables advanced object classification and environmental sensing.
• Mermaid Diagram:

  graph TD
      A[Multi-Wavelength LIDAR Input] --> B{SiC AWG (LIDAR Bands)};
      B -- Demuxed Reflected Pulses --> C{Polished Angled Facets (45 deg)};
      C -- Reflected Pulses --> D[Si/InGaAs APD Array (Automotive Grade)];
      D -- Electrical LIDAR Signals --> E[Temp-Hardened CMOS TIA Array];
      E -- Output --> F[Automotive Bus Interface];
      style B fill:#ded,stroke:#333,stroke-width:2px
      style D fill:#efe,stroke:#333,stroke-width:2px
      style E fill:#eef,stroke:#333,stroke-width:2px
  

Derivative 3.2: Agricultural Hyperspectral Imaging Receiver for Crop Health Monitoring

• Enabling Description: This variant is deployed in airborne or drone-mounted hyperspectral imaging systems for precision agriculture. The AWG is a wideband device (e.g., operating from visible to near-infrared spectrum, 400nm-1000nm), fabricated in a robust polymer material system for lightweight and resilience to environmental factors. The output of the AWG generates discrete wavelength channels (e.g., 64 spectral bands) corresponding to specific plant pigments and stress indicators. The polymer AWG incorporates a directly molded 43-degree reflective surface at its output. An array of high-responsivity silicon photodetectors, sensitive across the visible to near-infrared range, is mounted onto a specialized ceramic carrier that also houses a low-power, high-gain CMOS TIA array. This system enables rapid analysis of crop vigor, disease detection, and nutrient deficiencies over large areas.
• Mermaid Diagram:

  graph TD
      A[Hyperspectral Image Input (Fiber Bundle)] --> B{Wideband Polymer AWG (400-1000nm)};
      B -- 64 Spectral Channels --> C{Molded Reflective Surface (43 deg)};
      C -- Reflected Spectral Data --> D[Si Photodetector Array (NIR-VIS)];
      D -- Electrical Spectral Signals --> E[Low-Power CMOS TIA Array];
      E -- Output --> F[Image Processing Unit];
      style B fill:#fdf,stroke:#333,stroke-width:2px
      style D fill:#ddf,stroke:#333,stroke-width:2px
      style E fill:#dff,stroke:#333,stroke-width:2px
  

Derivative 3.3: Underwater Acoustic-to-Optical Conversion Receiver

• Enabling Description: This device functions as a receiver in an underwater communication system, converting incident acoustic waves into optical signals via an acousto-optic modulator, and then processing these optical signals. The AWG is optimized for specific laser wavelengths used in the underwater optical link (e.g., blue-green light, 450-550nm). It is housed in a pressure-resistant, hermetically sealed enclosure and fabricated from a high-purity silica material on a robust carrier. The output of the AWG includes an integrated 41-degree total internal reflection facet, optimized for the refractive index of the surrounding medium within the sealed environment. An array of silicon photodetectors, specifically chosen for their sensitivity in the blue-green spectrum, is mounted directly on a robust PCB carrier alongside a low-noise TIA array, all encased in a waterproof, pressure-compensated module.
• Mermaid Diagram:

  graph TD
      A[Acoustic-to-Optical Converter (Underwater)] --> B{Pressure-Resistant AWG (Blue-Green Opt.)};
      B -- Demuxed Optical Signals --> C{TIR Facet (41 deg, Sealed Env.)};
      C -- Reflected Optical Signals --> D[Si Photodetector Array (Blue-Green)];
      D -- Electrical Acoustic Signals --> E[Low-Noise TIA Array (Waterproof)];
      E -- Output --> F[Underwater Communication Interface];
      style B fill:#cee,stroke:#333,stroke-width:2px
      style D fill:#ece,stroke:#333,stroke-width:2px
      style E fill:#eec,stroke:#333,stroke-width:2px
  

4. Integration with Emerging Tech

Derivative 4.1: AI-Optimized Adaptive Optical Receiver

• Enabling Description: This device integrates an on-board artificial intelligence (AI) inference engine for real-time optimization of optical reception parameters. The AWG is manufactured with embedded micro-heaters or micro-electromechanical systems (MEMS) actuators that allow for dynamic, fine-tuning of the effective refractive index and physical orientation of the waveguide array, thereby precisely adjusting the output wavelength channels and the reflection angle. An array of micro-photodetectors captures a small portion of the reflected signals before they reach the main optoelectronic diodes, providing feedback to the AI. The AI, running a machine learning algorithm, processes this feedback to detect environmental changes (e.g., temperature fluctuations, incoming wavelength drift) and actively controls the AWG's micro-heaters/actuators to maintain optimal spectral alignment and reflection efficiency (e.g., maintaining a virtual 42-degree reflection path), maximizing signal-to-noise ratio for the main photodiode array. The light receiving chip includes integrated analog-to-digital converters (ADCs) and a digital signal processor (DSP) to interface with the AI module.
• Mermaid Diagram:

  sequenceDiagram
      participant O as Optical Input
      participant AWG as AWG (Adaptive)
      participant MR as Micro-Reflectors (Feedback)
      participant PD as Main Photodetector Array
      participant TIA as TIA Array
      participant DSP as DSP/ADC
      participant AI as AI Inference Engine
      participant CTRL as Control Actuators
  
      O->>AWG: Incoming Optical Signal
      AWG->>MR: Demultiplexed Signal (partial tap)
      MR->>PD: Reflected Signal (main path)
      MR->>DSP: Feedback Signal
      PD->>TIA: Electrical Signal
      TIA->>DSP: Amplified Electrical Signal
      DSP->>AI: Processed Feedback/Data
      AI->>CTRL: Optimal Adjustment Parameters
      CTRL->>AWG: Tune AWG (Wavelength/Angle)
      AWG->>MR: Adapted Signal Path
      DSP-->>AI: Real-time Data for Learning
      AI->>DSP: Predictive Maintenance Alerts
  

Derivative 4.2: IoT-Enabled Environmental Monitoring Optical Receiver

• Enabling Description: This device is designed for distributed, low-power environmental sensing within an Internet of Things (IoT) network. The optical receiver, including a compact AWG with an integrated 42-degree reflective facet, is optimized for specific atmospheric gas absorption lines (e.g., CO2, CH4, O2, H2O vapor) in the mid-infrared range. The entire module is powered by a miniature energy harvesting unit (e.g., solar or vibration-based) and incorporates low-power optoelectronic diodes (e.g., thermoelectrically cooled InGaAs photodiodes) and an ultra-low-power CMOS TIA array. An integrated IoT communication module (e.g., LoRaWAN, NB-IoT) transmits processed spectral data wirelessly to a central server. The carrier includes embedded environmental sensors (temperature, humidity, pressure) that are correlated with the optical absorption data by an on-board microcontroller, providing context for the optical measurements. Data is time-stamped and encrypted for secure transmission within the IoT network.
• Mermaid Diagram:

  graph TD
      A[Optical Fiber (Environmental Sample)] --> B{Compact Mid-IR AWG};
      B -- Gas Absorption Spectra --> C{Integrated Reflector (42 deg)};
      C -- Reflected Spectra --> D[Low-Power InGaAs PD Array];
      D -- Electrical Spectra --> E[Ultra-Low-Power CMOS TIA];
      E --> F[Microcontroller (Data Fusion)];
      F -- Environmental Sensor Data --> F;
      F --> G[IoT Communication Module (LoRaWAN)];
      G --> H[Cloud Platform (Data Analysis)];
      style B fill:#ccd,stroke:#333,stroke-width:2px
      style D fill:#dcc,stroke:#333,stroke-width:2px
      style E fill:#cdc,stroke:#333,stroke-width:2px
  

5. The "Inverse" or Failure Mode

Derivative 5.1: Graceful Degradation and Fail-Safe Receiver with Redundant Channels

• Enabling Description: This derivative implements a graceful degradation mode and fail-safe operation. The AWG is designed with a slightly wider output array, providing "guard band" channels on either side of the primary wavelength channels. The array of optoelectronic diodes includes a 2N configuration, where for every primary signal channel, there is a redundant or "hot-standby" diode. The output end of the AWG features a 41-46 degree angled reflective surface that slightly overfills the primary diode apertures, allowing for some overlap onto the guard band diodes. The light receiving chip incorporates active monitoring of the signal power and bit error rate (BER) for each primary channel. If a primary optoelectronic diode or its corresponding TIA fails (detected by a significant drop in power or excessively high BER), control logic on the carrier (e.g., a small FPGA) can dynamically re-route or prioritize signals from adjacent "guard band" diodes (which would receive a degraded but still usable signal) or activate the hot-standby diode. In a complete failure of the primary array, the system enters a "low-power diagnostic mode" where only critical status information is transmitted, and the AWG's internal temperature is maintained to prevent thermal shock.
• Mermaid Diagram:

  stateDiagram-v2
      [*] --> Normal_Operation
      Normal_Operation --> Degradation_Detected : Signal_Loss || High_BER
      Degradation_Detected --> Redundant_Channel_Activation : Activate_Hot_Standby || Use_Guard_Band
      Redundant_Channel_Activation --> Graceful_Degradation : System_Functional_Reduced_Cap
      Graceful_Degradation --> Low_Power_Diagnostic : Critical_Failure
      Redundant_Channel_Activation --> Normal_Operation : Fault_Cleared
      Low_Power_Diagnostic --> Shutdown : Manual_Intervention
      Low_Power_Diagnostic --> Repair_Mode : Remote_Diagnosis
      Graceful_Degradation --> Normal_Operation : Fault_Cleared
      Shutdown --> [*]
      Repair_Mode --> Normal_Operation : System_Restored
  
      state "Normal_Operation" {
          AWG_Active : All Channels Online
          PD_TIA_Active : Primary Diodes & TIA Active
          Monitoring_Active : Power & BER Monitoring
      }
  
      state "Redundant_Channel_Activation" {
          AWG_Active : All Channels Online
          Standby_PD_Active : Redundant Diode Activated
          Logic_Active : Re-routing Logic Engaged
      }
  
      state "Graceful_Degradation" {
          Reduced_Capacity : Partial Functionality
          Diagnostic_Logging : Log Faults
      }
  
      state "Low_Power_Diagnostic" {
          Min_Power : Reduced Power Consumption
          Critical_Alert : Transmit Status Only
          AWG_Standby : Maintain AWG Temp
      }
  

Derivative 5.2: Self-Test and Calibration Receiver with Integrated Reflectors

• Enabling Description: This derivative incorporates a self-test and self-calibration mode to ensure consistent performance and detect potential degradation. The AWG has an additional input port for a reference laser. A micro-optical switch at the AWG input can selectively direct either the incoming data signal or the reference laser into the AWG. The output end of the AWG, with its angled reflective surface (e.g., 42 degrees), directs the signals to the primary array of optoelectronic diodes. However, small, strategically placed micro-reflectors (e.g., tiny metallic spots or Bragg gratings) are integrated within the photosensitive area of specific diodes or immediately adjacent to them. When the reference laser is active, these micro-reflectors reflect a portion of the demultiplexed reference signal back towards a separate, integrated monitor photodiode array (not part of the main data path). By analyzing the reflected reference signal's power and spectral purity from the monitor diodes, the light receiving chip's embedded DSP can assess the health of the AWG, the main reflective surface, and the overall optical path, and apply compensation factors to the TIA gains for each channel to maintain calibration. This can detect issues like AWG wavelength drift, reflection surface degradation, or photodiode responsivity changes.
• Mermaid Diagram:

  graph TD
      A[Optical Input] --> B{Micro-Optical Switch};
      Ref[Reference Laser] --> B;
      B --> C{AWG (42 deg output reflector)};
      C -- Demuxed Signals --> D[Main PD Array];
      C -- Sampled Signals --> E[Integrated Micro-Reflectors];
      E -- Reflected Samples --> F[Monitor PD Array];
      D -- Electrical Signals --> G[TIA Array];
      F -- Monitor Signals --> H[DSP (Calibration Logic)];
      G --> H;
      H -- Compensation Factors --> G;
      H -- Status/Alerts --> I[External Control];
      style C fill:#aca,stroke:#333,stroke-width:2px
      style D fill:#cae,stroke:#333,stroke-width:2px
      style F fill:#eac,stroke:#333,stroke-width:2px
      style H fill:#aec,stroke:#333,stroke-width:2px
  

Combination Prior Art Scenarios with Open-Source Standards

This multi-channel parallel optical receiving device, as described in US10379301B2, can be combined with existing open-source standards to demonstrate obviousness of integrated optical solutions.

1. Combination with Open Compute Project (OCP) Networking Specifications (e.g., OCP NIC 3.0 / Project Olympus Optical Interface):

   • Description: A person having ordinary skill in the art (PHOSITA) designing optical interconnects for an OCP-compliant data center would seek to integrate optical receiving capabilities directly onto network interface cards (NICs) or server motherboards. The OCP specifications, while defining electrical and mechanical interfaces, encourage modular and efficient optical solutions. The multi-channel parallel optical receiving device, with its compact form factor and direct coupling mechanism (AWG with angled reflector to PD array), would be an obvious choice to integrate onto an OCP NIC. The PHOSITA would combine the principles of US10379301B2's compact optical reception (Claims 1 and 7) with the electrical and physical constraints of an OCP NIC 3.0 form factor. The motivation would be to achieve high-density, low-latency, and cost-effective multi-channel optical reception directly on the NIC, replacing bulkier discrete transceiver modules, in line with the OCP's goals of efficiency and openness in hardware design. The electrical interface of the light receiving chip (Claim 1) would naturally conform to the SerDes lanes defined by OCP's specifications for NICs.

2. Combination with IEEE 802.3 Ethernet Standards (e.g., 802.3bs/cd for 200GbE/400GbE):

   • Description: The IEEE 802.3 Ethernet standards (e.g., 802.3bs for 200/400 Gigabit Ethernet over multiple parallel fibers or wavelengths) define the physical layer specifications for high-speed optical communication. These standards necessitate multi-channel optical receivers capable of handling parallel optical lanes or wavelength division multiplexed signals. A PHOSITA designing a receiver compliant with these standards would consider the compact and efficient architecture described in US10379301B2 (Claims 1 and 7). Specifically, the AWG's ability to divide optical signals into multi-channel parallel optical signals based on their wavelengths directly aligns with the wavelength division multiplexing (WDM) requirements of 802.3bs/cd. The direct reflection onto optoelectronic diodes on a carrier simplifies assembly and reduces power consumption, which are critical considerations for high-density, power-constrained Ethernet transceivers. The electrical output of the TIA (part of the "light receiving chip" in Claim 1) would be designed to directly feed the electrical lanes (e.g., 50Gb/s PAM4 per lane) as specified by the IEEE 802.3 standard.

3. Combination with MIPI A-PHY / C-PHY Standards for In-Vehicle Communication:

   • Description: The MIPI Alliance develops interface specifications for mobile and automotive industries, including physical layer standards like A-PHY (for high-speed long-reach serial links) and C-PHY (for high-speed short-reach camera/display links). As autonomous vehicles increasingly rely on optical sensors (e.g., LIDAR, cameras with optical links), there's a need for compact and robust optical receiving modules. A PHOSITA designing an optical receiver for an in-vehicle network adhering to MIPI A-PHY/C-PHY standards would find the architecture of US10379301B2 (Claims 1 and 7) highly relevant. The multi-channel capability could be used for parallel data streams from multiple sensors or different spectral bands from a single sensor. The compact integration of the AWG, angled reflector, and PD array onto a carrier (Claim 1) makes it suitable for space-constrained automotive applications. The electrical output of the light receiving chip would interface directly with the MIPI-compliant deserializer, leveraging the existing high-speed electrical interfaces defined by the MIPI standards for robust, low-EMI in-vehicle data transmission.